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http://dx.doi.org/10.9725/kts.2021.37.6.208

Basic Study on the Improvement of Material Removal Efficiency of Sapphire CMP Using Electrolytic Ionization and Ultraviolet Light  

Park, Seonghyun (Graduate School, Dept. of Mechanical System Engineering, Tongmyong University)
Lee, Hyunseop (Dept. of Mechanical Engineering, Dong-A University)
Publication Information
Tribology and Lubricants / v.37, no.6, 2021 , pp. 208-212 More about this Journal
Abstract
Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.
Keywords
sapphire; chemical mechanical polishing; ultraviolet; electrolytic ionization; material removal rate;
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