• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.4
• /
• pp.826-832
• /
• 2004

A CMOS 8 bit folding and interpolating ADC for an embedded system inside VLSI is presented in this paper. This folding ADC uses the 2 stage architecture for improving of nonlinearity. repeating the folding and interpolating twice. At a proposed structure, a transistor differential pair operates on the second folder. A ADC with 2 stage architecture reduces the number of comparators and resisters. So it is possible to provide small chip size, low power consumption and high operating speed. The design technology is based on fully standard 0.25m double-Poly 2 metal n-well CMOS Process. The simulated Power consumption is 45mW with an applied voltage of 2.5V and sampling frequency of 250MHz. The INL and DNL are within <ㅆㄸㅌ>$\pm$0.2LSB, respectively. The SNDR is approximately 45dB for input frequency of 10MHz.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.6
• /
• pp.262-266
• /
• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.1
• /
• pp.87-96
• /
• 2019

Flexible organic light-emitting diode (OLED) displays with organic thin-film transistors (OTFTs) backplanes have been studied. A gate driver is required to drive the OLED display. The gate driver is integrated into the panel to reduce the manufacturing cost of the display panel and to simplify the module structure using fabrication methods based on low-temperature, low-cost, and large-area printing processes. In this paper, pseudo complementary metal oxide semiconductor (CMOS) logic gates are implemented using OTFTs for the gate driver integrated in the flexible OLED display. The pseudo CMOS inverter and NAND gates are designed and fabricated on a flexible plastic substrate using inkjet-printed OTFTs and the same process as the display. Moreover, the operation of the logic gates is confirmed by measurement. The measurement results show that the pseudo CMOS inverter can operate at input signal frequencies up to 1 kHz, indicating the possibility of the gate driver being integrated in the flexible OLED display.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.1165-1168
• /
• 1998

This paper describes a 72-word by 32-bit 2-read/1-write multi-port register file, which is suitable for 32-bit RISC/DSP microprocessors. To minimize area and achieve high speed, advanced single-ended sense amplifiers are used. Each part of circuit is optimized at transistor level. The verification of functionality and timing is performed using HSPICE simulations. After modeling and validating the circuit at transistor level, it was laid out in a 0.6um 1-poly 3-metal layer CMOS technology. The simulation results show maximum operating frequency is 179MHz in worst case conditions. It contains 27,326 transistors and the size is 3.02mm by 2.20mm.

• Journal of information and communication convergence engineering
• /
• v.8 no.1
• /
• pp.107-111
• /
• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.3
• /
• pp.339-344
• /
• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.377-380
• /
• 2001

In this paper, we propose new partial product compressor and ENMODL (Enhanced-NORA-MODL) CLA(Carry Look-ahead Adder) for high speed and low power multiplier. To reduce transistor count, area, power we developed two new-approaches. One is small size partial product compressor, the other is dynamic CMOS logic ENMODL CLA. The transistor count of new compressor is reduced by 11% as compared with that of conventional one. The speed of ENMODL CLA is increased by 6.27% as compared with NMODL CLA.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.914-917
• /
• 1999

The paper describes a 17 $\times$ 17-b multiplier using the Radix-4 Booth’s algorithm. which is suitable for 32-bit RISC/DSP microprocessors. To minimize design area and achieve improved speed, a 2-stage pipeline structure is adopted to achieve high clock frequency. Each part of circuit is modeled and optimized at the transistor level, verification of functionality and timing is performed using HSPICE simulations. After modeling and validating the circuit at transistor level, we lay it out in a 0.35 ${\mu}{\textrm}{m}$ 1-poly 4-metal CMOS technology and perform LVS test to compare the layout with the schematic. The simulation results show that maximum frequency is 330MHz under worst operating conditions at 55$^{\circ}C$ , 3V, The post simulation after layout results shows 187MHz under worst case conditions. It contains 9, 115 transistors and the area of layout is 0.72mm by 0.97mm.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.946-949
• /
• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.363-367
• /
• 1999

In this paper, a novel 108-bit conditional sum adder(CSA) with Energy Economized Pass-transistor Logic(EEPL) is proposed. A new architecture is adopted, in order to obtain a high speed operation, which is composed of seven modularized 16-bit CMS's and two separated carry generation block. Further a design technique based on EEPL is proposed to reduce the power consumption. With 0.65${\mu}{\textrm}{m}$ single poly, triple metal, 3.3V CMOS process, its operating speed is about 4.95㎱ and the power consumption is reduced in comparison with that of the conventional adder.