• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.35-40
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• 2008

Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.658-664
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• 2015

Lens designers generally refer to flat image fields and attempt to minimize the field curvature. Present-day CMOS image sensors for mobile phone cameras, however, are not flat, but curved. Sometimes it is necessary to generate an intentional field curvature according to the degree and direction of the CMOS image-sensor’s curvature. This paper presents the degree of curvature of a CMOS image sensor measured using an interferometer, and proposes an effective compensation method that minimizes the net field curvature through optimizing the air gap between lens elements, which is demonstrated using simulations and experiments.

• Current Optics and Photonics
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• v.7 no.2
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.35 no.11
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• pp.1043-1051
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• 2007

The digital sun sensor calculates the incident sunlight angle using the sunlight image registered on a CMOS image sensor. In order to accomplish this, an exact center of the sunlight image has to be determined. Therefore, an accurate estimate of the centroid is the most important factor in digital sun sensor development. The most general method for determining the centroid is the thresholding method, and this method is also the simplest and easy to implement. Another centering algorithm often used is the image filtering method that utilizes image processing. The sun sensor accuracy using these methods, however, is quite susceptible to noise in the detected sunlight intensity. This is especially true in the thresholding method where the accuracy changes according to the threshold level. In this paper, a template method that uses the sunlight image model to determine the centroid of the sunlight image is suggested, and the performance has been compared and analyzed. The template method suggested, unlike the thresholding and image filtering method, has comparatively higher accuracy. In addition, it has the advantage of having consistent level of accuracy regardless of the noise level, which results in a higher reliability.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.14-18
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• 2011

An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.

• Korean Journal of Remote Sensing
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• v.31 no.2
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• pp.85-99
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• 2015

TDI CCD sensors are being used for most of the electro-optical camera mounted on the low earth orbit satellite to meet high performance requirements such as SNR and MTF. However, the CMOS sensors which have a lot of implementation advantages over the CCD, are being upgraded to have the TDI function. A few methods for improving the issue of motion blur which is apparent in the CMOS sensor than the CCD sensor, are being introduced. Each pixel can be divided into a few sub-pixels to be read more than once as is the same case with three or four phased CCDs. The fill factor can be reduced intentionally or even a kind of mask can also be implemented at the edge of pixels to reduce the blur. The motion blur can also be reduced in the TDI CMOS sensor by reducing the integration time from the full line scan time. Because the integration time can be controlled easily by the versatile control electronics, one of two performance parameters, MTF and SNR, can be concentrated dynamically depending on the aim of target imaging. MATLAB simulation has been performed and the results are presented in this paper. The goal of the simulation is to compare dynamic MTFs affected by the different methods for reducing the motion blur in the TDI CMOS sensor.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.387-394
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• 2005

In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1787-1790
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• 2005

We have developed satellite devices for fine attitude control of the Science & Technology Satellite-2 (STSAT-2) scheduled to be launched in 2007. The analog sun sensors which have been continuously developed since the 1990s are not adequate for satellites which require fine attitude control system. From the mission requirements of STSAT-2, a compact, fast and fine digital sensor was proposed. The test of the fine attitude determination for the pitch and roll axis, though the main mission of STSAT-2, will be performed by the newly developed FDSS. The FDSS use a CMOS image sensor and has an accuracy of less than 0.01degrees, an update rate of 20Hz and a weight of less than 800g. A pinhole-type aperture is substituted for the optical lens to minimize the weight while maintaining sensor accuracy by a rigorous centroid algorithm. The target process speed is obtained by utilizing the Field Programmable Gate Array (FPGA) in acquiring images from the CMOS sensor, and storing and processing the data. This paper also describes the analysis of the optical performance for the proper aperture selection and the most effective centroid algorithm.