1 |
H. Abe, “Device technologies for high quality and smaller pixel in CCD and CMOS image sensors,” in IEDM Dig. Tech. Papers, pp. 989-992, 2004.
|
2 |
K. Findlater, R. Henderson,D, Baxter, et al.,“SXGA pinned photodiode CMOS image sensor in 0.35- m technology,” in ISSCC Dig. Tech. Papers, pp. 218-489, 2003.
|
3 |
K. Mabuchi, N. Nakamura, E. Funatsu, et al., "CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode," IEEE J. Solid-State Circuits, vol. 39, pp. 2408-2416, Dec. 2004.
DOI
ScienceOn
|
4 |
J. Lai and A. Nathan, "Reset and partition noise in active pixel image sensors," IEEE Trans. Electron Devices, vol. 52, pp. 2329-2332, Oct. 2005.
DOI
ScienceOn
|
5 |
H. Tian, B. Fowler, and A.E. Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor," IEEE J. Solid-State Circuits, vol. 36, pp. 92-101, Jan. 2001.
DOI
ScienceOn
|
6 |
T. Lule, S. Benthien, and H. Keller, et al., "Sensitivity of CMOS based imagers and scaling perspectives," IEEE Trans. Electron Devices, vol. 47, pp. 2110-2122, Nov. 2000.
DOI
ScienceOn
|
7 |
I. D. Jung, M. K. Cho, K. M. Bae, et al., "Pixelstructured scintillator with polymeric microstructures for X-Ray image sensors," ETRI Journal, vol. 30, no. 5, pp. 747-749, Oct. 2008.
DOI
ScienceOn
|
8 |
G.Dearmaley, J.H.Freeman, R.S.Nelson, et al., "Ionimplantation,” North-Holland, New York, 1973.
|
9 |
R.C. Jaeger, “Introduction to microelectronic fabrication,” Second Edition, Prentice Hall, 2002.
|
10 |
B. Streetman and S. Banerjee, “Solid state electronic devices,” 5th Edition, Prentice Hall.
|