• 전기학회논문지
• /
• 제64권12호
• /
• pp.1730-1736
• /
• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.970-973
• /
• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• 전기학회논문지
• /
• 제61권3호
• /
• pp.422-426
• /
• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

• 전기학회논문지
• /
• 제64권12호
• /
• pp.1737-1741
• /
• 2015

A multi-channel CMOS transimpedance amplifier(TIA) array is realized in a $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode and a feed-forward TIA that exploits an inverter input stage followed by a feed-forward common-source amplifier so as to achieve lower noise and higher gain than a conventional voltage-mode inverter TIA. Measured results demonstrate that each channel achieves $76-dB{\Omega}$ transimpedance gain, 720-MHz bandwidth, and -20.5-dBm sensitivity for $10^{-9}$ BER. Also, a single channel dissipates the power dissipation of 30 mW from a single 1.8-V supply, and shows less than -33-dB crosstalk between adjacent channels.

• 전자공학회논문지A
• /
• 제31A권12호
• /
• pp.64-70
• /
• 1994

In this paper, we inverstigated how a parricular internal inverter circuit, which is located far from the input protection in CMOS DRAM, can be easily damaged by external ESD stress, while the protection circuit remains intact. It is shown in a mega bit DRAM that the internal circuit can be safe from ESD by simply improving the input protection circuit. An inverter, which consists of a relatively small NMOSFET and a very large PMOSFET, is used to speed up DRAMs, and the small NMOSFET is vulnerable to ESD in case that the discharge current beyond the protection flows through the inverter to Vss or Vcc power lines on chip. This internal circuit damage can not be detected by only measuring input leakage currents, but by comparing the standby and on operating current before and after ESD stressing. It was esperimentally proven that the placement of parasitic bipolar transistor between input pad and power supply is very effective for ESD immunity.

• Journal of Electrical Engineering and Technology
• /
• 제8권5호
• /
• pp.1182-1187
• /
• 2013

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2012년도 춘계학술대회
• /
• pp.880-883
• /
• 2012

본 논문에서는 CMOS 논리소자의 과도방사선 피해 영향을 분석하기 위해 0.18um CMOS 공정으로 NMOSFET, PMOSFET을 이용하여 기본 논리소자인 INVERTER, NAND, NOR를 설계하고 제작하였다. 제작된 논리 소자 실측결과 1.8V 전원에서 1kHz의 Pulse 입력을 가하였을 때 소모 전류는 70uA 이내, Rising Time, Falling Time 또한 4us 이내이며 펄스 방사선 실측시험을 위해 50M Cable을 이용하여 측정결과 Line Delay가 발생하는 것을 확인하였다.

• 대한전자공학회논문지SD
• /
• 제39권2호
• /
• pp.56-62
• /
• 2002

문턱전압 스윙 드라이버(threshold voltage swing driver)와 이중 감지 증폭기 리시버(dual sense amplifier receiver)를 가진 새로군 고속 저전압 스윙 온 칩 버스 (on-chip BUS)를 제안하였다. 문턱전압 스윙 드라이버는 버스에서의 전압상승 시간을 CMOS 인버터(inverter) 드라이버에서의 약 30% 이내로 줄여주고, 이중 감지 증폭기 리시버는 감지 증폭기 리시버를 사용하는 기존의 저전압 스윙 버스들의 데이터 전송량을 두 배 향상시켜 준다. 문턱전압 스윙 드라이버와 이중 감지 증폭기 리시버를 모두 사용할 경우, 온 칩 버스에서 사용하는 기존의 CMOS 인버터와 비교하여 제안된 방식은 약 60%의 속도 증가와 75%의 소모전력 감소를 얻는다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제9권1호
• /
• pp.14-21
• /
• 2009

A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a $0.18{\mu}m$ CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a $0.18{\mu}m$ CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.

• 전자공학회논문지C
• /
• 제36C권9호
• /
• pp.54-65
• /
• 1999

집적도 및 동작속도의 증가에 따라 설계과정에서 전력소모를 예측하는 것이 TTM(time to market)의 감소를 위해 중요한 문제로 대두되고 있다. 본 논문에서는 CMOS 게이트의 최대소모전력을 예측할 수 있는 예측모델을 제안하였다. 이 모델은 최대소모전력에 대한 계산모델이며, CMOS 게이트를 구성하는 MOSFET 및 게이트의 동작특성, 그리고 게이트의 입력신호 특성을 포함하여 형성하였다. 모델의 설정 절차로는, 먼저 CMOS 인버터에 대한 최대소모전력 예측모델을 형성하고, 다입력 CMOS 게이트를 CMOS 인버터로 변환하는 모델을 제안하여, 변환모델로 변환된 결과를 인버터의 최대소모전력 예측모델에 적용하는 방법을 택함으로서 일반적인 CMOS 게이트에 적용할 수 있도록 하였다. 제안된 모델을 $0.6{\mu}m$ 설계규칙으로 설계한 회로의 HSPICE 시뮬레이션 결과와 비교한 결과, 게이트 변환모델은 SPICE와 5%이내의 상대오차율을 보였으며, 최대소모전력 예측모델은 10% 이내의 상대오차율을 보여 충분히 정확한 모델임을 입증하였다. 또한 제안된 모델에 의한 계산시간이 SPICE 시뮬레이션보다 30배 이상의 계산속도를 보여, 전력예측을 위해 본 논문에서 제안한 모델이 매우 효과적임을 보였다.