• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.501-502
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• 2009

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.2
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• pp.145-154
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• 1991

In this dissertation, the same reading and writing operation of general SRAM, the algonthm and hardware of 8 bit $\times$16 word CAM(Content Addressable Memory) which carry out the parallel that search is presented. The designed CAM chip consists of five functional blocks (CAM cell array, Address Deceden, Address Encoden. Data Selector, Sense Amplifier). The smulation is performed using logic smmulator on Apollo workstation and PSPICE eitcut simulation on PC/AT. The designed CAM was fabricated by 3um CMOS N Well process (ETRI) design nitles and testing was performed.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.103-106
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• 2010

In this paper, the delay times were evaluated to develop highly reliable time-to-digital converter(TDC) in analog and digital delay element structures. The delay element can be designed by using current source or inverter. In case of using inverter, the number of inverter has to be controlled to adjust the delay time. And in case of using current source, the current for charging and discharging is controlled. When the current source is used the delay time of the delay element is not sensitive with varying the channel width of CMOS. However, when the inverter is used the delay time is directly related to the channel width of CMOS. Therefore to obtain good reliability in TDC circuit the delay element using current source is more stable compared to inverter in the viewpoint of the variation of fabrication process.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.53-56
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• 2001

With the ever increasing clock frequency and integration level of CMOS circuits, I/O(input/output) and interconnect issues are becoming a growing concern. In this thesis, we propose the 2.5Gbps high speed input driver This driver consists of four different blocks, which are the high speed serializer , PECL(pseudo emitter coupled logic) Line Driver, PLL(phase lock loop) and pre-emphasis signal generator. The proposed pre-emphasis block will compensate the high frequency components of the 2.5Gbps data signal. Using the pre-emphasis block, we can obtain 2.5Gbps data signal with differential peak to peak voltage about 900 m $V_{p.p}$ This driver structure is on fabrication in 2.5v/10.25um 1poly, 5metal CMOS process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5832-5837
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• 2011

In this paper, we designed a thermal shutdown block for LED applications using a 1 ${\mu}m$ CMOS process. The proposed thermal shutdown protection circuit has been designed with a shut-off temperature of $120^{\circ}C$ and a restart temperature of $90^{\circ}C$ which are suitable conditions for LED driver IC. Also, we got SPICE simulation results of the circuit about process variation of the semiconductor fabrication. From simulation data, process variation rate of the proposed circuit are within 7 % which are good results compared with conventional BJT current mirror type circuit. Finally, we confirmed that the thermal shutdown circuit has good thermal protection function within a LED driver IC.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.1
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• pp.87-96
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• 2019

Flexible organic light-emitting diode (OLED) displays with organic thin-film transistors (OTFTs) backplanes have been studied. A gate driver is required to drive the OLED display. The gate driver is integrated into the panel to reduce the manufacturing cost of the display panel and to simplify the module structure using fabrication methods based on low-temperature, low-cost, and large-area printing processes. In this paper, pseudo complementary metal oxide semiconductor (CMOS) logic gates are implemented using OTFTs for the gate driver integrated in the flexible OLED display. The pseudo CMOS inverter and NAND gates are designed and fabricated on a flexible plastic substrate using inkjet-printed OTFTs and the same process as the display. Moreover, the operation of the logic gates is confirmed by measurement. The measurement results show that the pseudo CMOS inverter can operate at input signal frequencies up to 1 kHz, indicating the possibility of the gate driver being integrated in the flexible OLED display.

• Journal of IKEEE
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• v.15 no.1
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• pp.37-42
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• 2011

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

• Journal of Sensor Science and Technology
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• v.28 no.5
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• pp.284-288
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• 2019

A calibration-free analog neuron circuit is proposed as a viable alternative to the power hungry digital neuron in implementing a deep neural network. The conventional analog neuron requires calibrations because a voltage-mode link is used between the soma and the synapse, which results in significant uncertainty in terms of current mapping. In this work, a current-mode link is used to establish a robust link between the soma and the synapse against the variations in the process and interconnection impedances. The increased hardware owing to the adoption of the current-mode link is estimated to be manageable because the number of neurons in each layer of the neural network is typically bounded. To demonstrate the utility of the proposed analog neuron, a simple neural network with $4{\times}7{\times}3$ architecture has been designed for classifying iris flowers. The chip is now under fabrication in 0.35 mm CMOS technology. Thus, the proposed true current-mode analog neuron can be a practical option in realizing power-efficient neural networks for edge computing.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.8
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• pp.1227-1234
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• 2013

An analog array with a 1.2 double poly floating gate transistor has been developed with a standard CMOS fabrication process. The programming of each cell by means of an efficient control circuit eliminates the unnecessary erasing operation which has been widely used in conventional analog memories. It is seen that the path of the signal for both the programming and the reading is almost exactly the same since just one comparator supports both operations. It helps to eliminate the effects of the amplifier input-offset voltage problem on the output voltage for the read operation. In the array, there is no pass transistor isolating a cell of interest from the adjacent cells in the array. Instead of the extra transistors, one extra bias voltage, Vmid, is employed. The experimental results from the memory shows that the resolution of the memory is equivalent to the information content of at least six digital cells. Programming/erasing of each cell is achieved with no detectable disturbance of adjacent cells. Finally, the unique shape of the injector structure in a EEPROM is adopted as a cell of analog array. It reduces the programming voltage below the transistor breakdown voltage without any special fabrication process.