• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2317-2325
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• 2016

This paper presents a 10 bit successive approximation register (SAR) analog-to-digital converter (ADC) with a reference driver. The proposed SAR ADC consists of a capacitive digital-to-analog converter (CDAC), a comparator, a SAR logic, and a reference driver which improves the immunity to the power supply noise. The reference driver generates the reference voltages of 0.45 V and 1.35 V for the SAR ADC with an input voltage range of ${\pm}0.9V$. The SAR ADC is implemented using a $0.18-{\mu}m$ CMOS technology with a 1.8-V supply. The proposed SAR ADC including the reference driver almost maintains an input voltage range to be ${\pm}0.9V$ although the variation of supply voltage is +/- 200 mV. It consumes 5.32 mW at a sampling rate of 10 MS/s. The measured ENOB, DNL, and INL of the ADC are 9.11 bit, +0.60/-0.74 LSB, and +0.69/-0.65 LSB, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.10
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• pp.1-7
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• 2020

In recent years, as LED display systems are actively spread, study on effective control methods for an LED driver for driving the systems has been in progress. The most representative among them is the uniform brightness control method for the LED driver channel. In this paper, we propose an LED driver IC for BLU with current compensation and system protection functions to minimize channel luminance deviation. It is designed for current accuracy within ±3% between channels and a channel current of 150 mA. In order to satisfy the design specifications, the channel amplifier offset was canceled out by a chopping operation using a channel-driving PWM signal. Also, a pre-charge function was implemented to minimize the fast operation speed and luminance deviation between channels. LED error (open, short), switch TR short detection, and operating temperature protection circuits were designed to protect the IC and BLU systems. The proposed IC was fabricated using a Magnachip 0.35-um CMOS process and verified using Cadence and Synopsys' Design Tool. The fabricated LED driver IC has current accuracy within ±1.5% between channels and 150-mA channel output characteristics. The error detection circuits were verified by a test board.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.31-36
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• 2011

This paper investigates the ESD robustness of the stacked output driver with a 0.13um CMOS process. To represent an actual I/O system, we implemented stacked output driver circuits with pre-drivers and a rail-based power clamp. We implemented eight kinds of circuits varying pre-driver input connections and stacked driver size. The test circuits are examined with TLP measurements. It is shown that breakdown current and voltage can be increased by connecting the pre-driver input to a power supply and using stacked devices of a similar size. Based on the test results, design guideline is suggested to improve ESD robustness of the stacked output drivers.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.702-708
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• 2020

Recently, as LED display systems have become larger, research on effective power control methods for the systems has been in progress. This paper proposes a power control method to minimize power loss due to the difference in LED characteristics for each channel of a backlight unit (BLU) system. The proposed LED driver IC has a power optimization function and detects the minimum headroom voltage for constant current operation of all channels and linearly controls the DC-DC converter output. Thus, it minimizes power consumption due to unnecessary additional voltage. In addition, it does not require a voltage sensing comparator or a voltage generation circuit for each channel. This has a great advantage in reducing the chip size and for stabilization when implementing an integrated circuit. In order to verify the proposed function, an IC was designed using Cadence and Synopsys' design tools, and it was fabricated with a Magnachip 0.35um 5V/40V CMOS process. The experiments confirmed that the proposed power control method controls the minimum required voltage of the BLU system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.7
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• pp.1347-1353
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• 2015

We implemented a 10 Gb/s 4-channel vertical cavity surface emission lasers (VCSEL) driver array in a $0.13{\mu}m$ CMOS process technology. To enhance high current resolution, power dissipation, and chip space area, digital APC/AMC with time division sensing technology is primarily adopted. The measured -3 dB frequency bandwidth is 9.2 GHz; the small signal gain is 10.5 dB; the current resolution is 0.01 mA/step, suitable for the wavelength operation up to 10 Gb/s over a wide temperature range. The proposed APC and AMC demonstrate 5 to 20 mA of bias current control and 5 to 20 mA of modulation current control. The whole chip consumes 371 mW of low power under the maximum modulation and bias currents. The active chip size is $3.71{\times}1.3mm^2$.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1185-1188
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• 2003

This paper describes a design for a 2.5Gb/s serial data link CMOS transceiver based on the InfiniBand$^{TM}$ specification. The transceiver chip integrates data serializer, line driver, Tx PLL, deserializer, clock recovery, and lock detector. The designed transceiver is fabricated in a 0.25 ${\mu}{\textrm}{m}$ CMOS mixed-signal, 1-poly, 5-metal process. The first version chip occupies a 3.0mm x 3.3mm area and consumes 450mW with 2.5V supply. In 2.5 Gbps, the output jitter of transmitter measured at the point over a 1.2m, 50Ω coaxial cable is 8.811ps(rms), 68ps(p-p). In the receiver, VCO jitter is 18.5ps(rms), 130ps(p-p), the recovered data are found equivalent to the transmitted data as expected. In the design for second version chip, the proposed clock and data recovery circuit using linear phase detector can reduce jitter in the VCO of PLL.L.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.795-798
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• 2003

In this paper, a CMOS Tx RF/IF single chip for PCS applications is designed. The chip consumes 84mA from a 3V supply and the layout area without pads is 1.6mm$\times$3.5mm. Simulation results show that the RF block composed of a SSB RF block and a driver amplifier exhibits a gain of 14.8dB and an OIP3 of 7dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. The designed circuits are under fabrication using a 0.35${\mu}{\textrm}{m}$ CMOS process.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.609-612
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• 2002

In this paper, a 12-bit 100-MHz CMOS current steering digital-to-analog converter is designed. In the D/A converter, a driver circuit using a dynamic latch is implemented to obtain low glitch and thermometer decoder is used for low DNL errors, guaranteed monotonicity, reduced stitching noise. And a threshold voltage-compensated current source. The D/A converter is designed with 0.35-$\mu m$ CMOS technology at 3.3 V power supply and simulated with HSPICE. The maximum power dissipation of the designed DAC is 143 mW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.994-999
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• 2006

For low-cost embedded EEPROM, in this paper, single polysilicon EEPROM and n-channel high-voltage LDMOST device are developed in a $0.25{\mu}m$ standard CMOS logic process. Using these devices developed, the EEPROM chip is fabricated. The fabricated EEPROM chip is composed of 1 Kbit single polysilicon EEPROM away and high voltage driver circuits. The program and erase characteristics of the fabricated EEPROM chip are evaluated using 'STA-EL421C'. The fabricated n-channel high-voltage LDMOST device operation voltage is over 10 V and threshold voltage window between program and erase states of the memory cell is about 2.0 V.