• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.301-304
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• 2011

This paper describes the possibility of a low-power, high-resolution fingerprint sensor chip. A modified capacitive detection circuit of charge sharing scheme is proposed, which reduces the static power dissipation and increases the voltage difference between a ridge and valley more than conventional circuit. The detection circuit is designed and simulated in 3.3V, 0.35${\mu}$m standard CMOS process, 40MHz condition. The result shows about 27% power dissipation reduction and 90% improvement of difference between a ridge and valley sensing voltage. The proposed circuit is more stable and effective than a typical circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.4
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• pp.787-794
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• 1999

This paper presents an ENMODL(enhances NORA MODL) circuit and implements a high-speed 32 bit CLA(carry lookahead adder) with the new dynamic logics. The proposed logic can reduce the area and the Propagation delay of carry because output inverters and a clocking PMOS of second stage can be omitted in two-stage MODL(multiple output domino logic) circuits. The 32-bit CLA is implemented with 0.8um double metal CMOS Process and the carry propagation delay of the adder is about 3.9 nS. The ENMODL circuits can improve the performance in the high-speed computing circuits depending on the degree of recurrence.

• Journal of Navigation and Port Research
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• v.35 no.4
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• pp.299-302
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• 2011

In this letter, the effect of quality factor on center frequency deviation in miniaturized coupled line bandpass filter (BPF) with diagonally end-shorted at their opposite sides and lumped capacitors is theoretically analyzed. The miniaturized BPF of a two-stage structure with two types of quality factors in standard CMOS process was designed and manufactured at 5.5 GHz. The die area of BPF was $1.44{\times}0.41\;mm^2$. The measured center frequency of BPF with a quality factor of 4.9 was deviated from 5.5 GHz to 4.7 GHz. The one with 14.8 was shifted to 5GHz. The theoretical and measured results validate that quality factor influences the center frequency shift of BPF.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.476-478
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• 2006

A prescaler is an essential building block for PLL-based frequency synthesizers and must satisfy high-speed and low-power characteristics. The design of D-flip flips used in the prescaler implementation is thus critical. In this paper a 64/65, 128/129 dual-modulus prescaler is designed using a $0.25{\mu}m$ CMOS process. In the design a new dynamic D-flip flop is employed, where glitches are minimized using discharge suppression scheme, speed is improved by making balanced propagation delay, and low power consumption is achieved by removing unnecessary discharge. The designed prescaler operates up to 2.5GHz and consumes 3.1mA at 2.5GHz operation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.246-251
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• 2014

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two step Single Slope A/D Converter (SS-ADC) is proposed. The A/D converter is composed of both 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D convertor. In order to reduce the pixel noise, further, a Hybrid Correlated Double Sampling (H-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA ($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35 mW at 3.3 V supply voltage. The measured conversion speed is 10 us, and the frame rate is 220 frames/s.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.417-418
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• 2008

A quadrature voltage controlled oscillator(QVCO) with MOS-varactors has been fabricated for X-band applications. The QVCO consists of two cross -coupled differential cores and buffer amplifiers, which has fabricated in TSMC $0.18{\mu}m$ CMOS process. The QVCO exhibits a frequency tuning range from 8.38 GHz to 10.62 GHz. The phase noise is -88 dBc/Hz at 1 MHz-offset frequency. The total bias current is 25 mA including four buffer amplifiers.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.419-420
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• 2008

A power amplifier(PA) has been designed for 900 MHz-band applications. The PA consists of a single-ended CMOS amplifier which has $0.18{\mu}m{\times}64{\times}6$ gate width. The PA has been designed using $0.18{\mu}m$ CMOS process. At 900 MHz, the PA exhibit an output power of 20.8 dBm and a power-added efficiency(PAE) of 58.4 % with 22.2 dB power gain.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.435-436
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• 2008

This paper presents a dual band frequency synthesizer for GSM and Wideband CDMA which is designed in a standard 0.13um CMOS 1P6M process. The shared components include phase frequency detector (PFD), charge pump (CP), loop filter, integer frequency divider(128/129 DMP, 4bit PC, 3bit SC) and Low noise Ring-VCO. A high-speed low power dual modulus prescaler is proposed to operate up to 2.1GHz at 3.3V supply voltage with 2mW power consumption by simulation. The simulated phase noise of VCO is -101dBc/Hz at 200kHz offset frequency from 1.9GHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.1069-1070
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• 2008

This paper presents a high efficient two-stage interleaved synchronous buck CMOS DC-DC converter. The proposed circuit has a fixed duty cycle as 0.5 by an added buck converter. And it causes the best ripple cancelation of the output current ripple. The proposed circuit was simulated by HSPICE with a standard CMOS $0.35{\mu}m$ process parameter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.193-197
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• 2013

This paper presents a 5-bit true time delay circuit using a standard 0.18 ${\mu}m$ CMOS process for the broadband phased array antenna without the beam squint. The maximum time delay of ~106 ps with the delay step of ~3.3 ps is achieved at 5-20 GHz. The RMS group delay and amplitude errors are < 1 ps and <2 dB, respectively. The measured insertion loss is <27 dB and the input and output return losses are <12 dB at 5-15 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is $1.04{\times}0.85\;mm^2$ including pads.