Design of a Power Amplifier for 900 MHz-band Applications

900 MHz 대역 CMOS 전력증폭기 설계

  • Lee, Ji-Ho (Dept. of Electronic and Radio Engineering, Graduate School of KyungHee Univ.) ;
  • Chae, Kyu-Sung (Dept. of Electronic and Radio Engineering, Graduate School of KyungHee Univ.) ;
  • Kim, Chang-Woo (Dept. of Electronic and Radio Engineering, Graduate School of KyungHee Univ.)
  • 이지호 (경희대학교 일반대학원 전자전파공학과) ;
  • 채규성 (경희대학교 일반대학원 전자전파공학과) ;
  • 김창우 (경희대학교 일반대학원 전자전파공학과)
  • Published : 2008.06.18

Abstract

A power amplifier(PA) has been designed for 900 MHz-band applications. The PA consists of a single-ended CMOS amplifier which has $0.18{\mu}m{\times}64{\times}6$ gate width. The PA has been designed using $0.18{\mu}m$ CMOS process. At 900 MHz, the PA exhibit an output power of 20.8 dBm and a power-added efficiency(PAE) of 58.4 % with 22.2 dB power gain.

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