• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.437-444
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• 2015

A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.539-540
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• 2008

This paper presents an ultra-wideband (UWB) CMOS low noise amplifier (LNA) topology that operates in 3.1-10.6GHz band. The common gate structure provides wideband input matching and flattens the passband gain. The proposed UWB amplifier is implemented in 0.18 um CMOS technology for lower band operation mode. Simulation shows a minimum NF of 2.35 dB, a power gain of $18.3{\sim}20\;dB$, better than -10 dB of input and output matching, while consuming 16.4 mW.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.581-582
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• 2008

This paper describes novel bootstrapped CMOS differential logic family operating at near-Vth supply voltage. The proposed logic family provides improved switching speed by utilizing voltage bootstrapping for the supply voltage approaching device thresholds. The circuit is configured as differential structure having single bootstrapping capacitor, minimizing area overhead and providing complete logic composition capability. A 64-bit adder designed using the proposed technique in a 0.18um CMOS process provides up to 79% improvement in terms of power-delay product as compared to the conventional adder designed with DCVS.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.457-458
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• 2008

This paper presents an output common mode current compensation method to achieve both constant Gm and constant gain. A conventional rail-to-rail CMOS op-amp with constant Gm was designed by using complementary differential input stage and current compensation skills. But it doesn't operate constant gain, because of output resistance variation. With $0.18{\mu}m$ CMOS process, the simulation results show that the differential gain variation can achieve less than 1.3dB. And a 60dB gain, a 13.5MHz unity gain-frequency, and 1mW power consumption, when operating at 1.8V and 10pF load.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1197-1200
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• 2003

This paper presents A/D converter for the signal processing of infrared sensor and CMOS image sensor. The A/D converter designed in a 0.25um CMOS process provides a resolution of 10bits at a sampling rate of 50MS/s while dissipating 67mW at 2.5V supply voltage. This A/D converter is based on a pipeline architecture in which the number of bits converted per stage and the stage number are optimized to achieve the desired linearity and reduce power consumption as well. Simulation results show that the A/D converter using 1.5bit per stage MDAC with switched capacitors and dynamic comparators efficiently reduces the power consumption.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1185-1188
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• 2003

This paper describes a design for a 2.5Gb/s serial data link CMOS transceiver based on the InfiniBand$^{TM}$ specification. The transceiver chip integrates data serializer, line driver, Tx PLL, deserializer, clock recovery, and lock detector. The designed transceiver is fabricated in a 0.25 ${\mu}{\textrm}{m}$ CMOS mixed-signal, 1-poly, 5-metal process. The first version chip occupies a 3.0mm x 3.3mm area and consumes 450mW with 2.5V supply. In 2.5 Gbps, the output jitter of transmitter measured at the point over a 1.2m, 50Ω coaxial cable is 8.811ps(rms), 68ps(p-p). In the receiver, VCO jitter is 18.5ps(rms), 130ps(p-p), the recovered data are found equivalent to the transmitted data as expected. In the design for second version chip, the proposed clock and data recovery circuit using linear phase detector can reduce jitter in the VCO of PLL.L.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.10
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• pp.19-26
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• 1997

Novel class AB CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well CMOS process for high-frequency current-mode signal processing were developed. The CCII for low power operation consists of a class AB push-pull stage for the current input, a complementary source follower for the voltage input, and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated CCII show that the current input impedance is 875.ohm. and the bandwidth of flat gain when used as a voltage amplifier extends beyond 4MHz. The power dissipation is 1.25mW and the active chip area is 0.2*0.15[mm$\^$2/].

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.9
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• pp.1-9
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• 1997

Novel class A CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well standard CMOS process for high-frequency current-mode signal processing were developed. The CCII consists of a regulated current-cell for the voltage input and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated cCII show that the current input impedance is 308 .ohm. and the 3-dB cutoff frequency when used as a voltage amplifier extends beyond 10MHz. The linear dynamic ranges of voltage and current are from -0.5V to 1.5V and from -100.mu.A to +120.mu.A for supply voltage V$\_$DD/ = -V$\_$SS/=2.5V, respectively. The power dissipation is 2 mW and the active chip area is 0.2 * 0.2 [mm$\^$2/].

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.795-798
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• 2003

In this paper, a CMOS Tx RF/IF single chip for PCS applications is designed. The chip consumes 84mA from a 3V supply and the layout area without pads is 1.6mm$\times$3.5mm. Simulation results show that the RF block composed of a SSB RF block and a driver amplifier exhibits a gain of 14.8dB and an OIP3 of 7dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. The designed circuits are under fabrication using a 0.35${\mu}{\textrm}{m}$ CMOS process.