• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1527-1530
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• 2009

A LCoS micro-display using polymer dispersed liquid crystals (PDLCs) for light switching layer was fabricated. The Si backplane of SVGA ($800{\times}600$) with a pixel size of $14{\times}14mm^2$ was prepared by a $0.35{\mu}m$ 18V CMOS process. PDLCs were filled in the gap between backplane and ITO glass by conventional vacuum filling method. The prepared panels were driven by a field sequential color (FSC) scheme at the frequency of 180Hz and were successful in modulating LED lights to show projection images. The preparation and performance of PDLC-LCoS are presented.

• ETRI Journal
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• v.37 no.5
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• pp.961-971
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• 2015

This paper proposes a 250 mV supply voltage digital low-dropout (LDO) regulator. The proposed LDO regulator reduces the supply voltage to 250 mV by implementing with all digital circuits in a$0.11{\mu}m$ CMOS process. The fast current tracking scheme achieves the fast settling time of the output voltage by eliminating the ringing problem. The over-voltage and under-voltage detection circuits decrease the overshoot and undershoot voltages by changing the switch array current rapidly. The switch bias circuit reduces the size of the current switch array to 1/3, which applies a forward body bias voltage at low supply voltage. The fabricated LDO regulator worked at 0.25 V to 1.2 V supply voltage. It achieved 250 mV supply voltage and 220 mV output voltage with 99.5% current efficiency and 8 mV ripple voltage at $20{\mu}A$ to $200{\mu}A$ load current.

• ETRI Journal
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• v.39 no.5
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• pp.746-755
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• 2017

In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage ($V_t$) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding $n^+/p^+$ floating regions. Moreover, the holding voltage ($V_h$) is improved by using segmented technology. The proposed circuit was fabricated using a $0.18-{\mu}m$ bipolar-CMOS-DMOS process with a width of $100{\mu}m$. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the $V_t$ of the proposed circuit increased from 14 V to 27.8 V, and $V_h$ increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V.

• Journal of Mechanical Science and Technology
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• v.18 no.7
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• pp.1055-1061
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• 2004

In this research, a vision system for detecting breakages of small-diameter taps, which are rarely detected by the indirect in-process monitoring methods such as acoustic emission, cutting torque and motor current, was developed. Two HMI (Human Machine Interface) programs to embed the developed vision system into a Siemens open architecture controller, 840D, were developed. They are placed in sub-windows of the main window of the 840D and can be activated or deactivated either by a softkey on the operating panel or the M code in the NC part program. In the event that any type of tool breakage is detected, the HMI program issues a command for an automatic tool change or sends an alarm signal to the NC kernel. An evaluation test in a high-speed tapping machine showed that the developed vision system was successful in detecting breakages of small-diameter taps up to M1.

• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.433-440
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• 2013

We present an experimental and numerical study of spectral profiles of effective group indices of hydrogenated amorphous silicon (a-Si:H) waveguides and of their chromatic-dispersion effect on the four-wave-mixing (FWM) signal generation. The a-Si:H waveguides of 220-nm thickness and three different widths of 400, 450 and 500 nm were fabricated by using the conventional CMOS device processes on a $2-{\mu}m$ thick $SiO_2$ bottom layer deposited on 8-inch Si wafers. Mach-Zehnder interferometers (MZIs) were formed with the a-Si:H waveguides, and used for precise measurement of the effective group indices and thus for determination of the spectral profile of the waveguides' chromatic dispersion. The wavelength ranges for the FWM-signal generation were about 45, 75 and 55 nm for the 400-, 450- and 500-nm-wide waveguides, respectively, at the pump wavelength of 1532 nm. A widest wavelength range for the efficient FWM process was observed with the 450-nm-wide waveguide having a zero-dispersion near the pump wavelength.

• ETRI Journal
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• v.38 no.1
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• pp.100-111
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• 2016

This paper presents a low-complexity channel-adaptive reconfigurable $4{\times}4$ QR-decomposition and M-algorithm-based maximum likelihood detection (QRM-MLD) multiple-input and multiple-output (MIMO) detector. Two novel design approaches for low-power QRM-MLD hardware are proposed in this work. First, an approximate survivor metric (ASM) generation technique is presented to achieve considerable computational complexity reduction with minor BER degradation. A reconfigurable QRM-MLD MIMO detector (where the M-value represents the number of survival branches in a stage) for dynamically adapting to time-varying channels is also proposed in this work. The proposed reconfigurable QRM-MLD MIMO detector is implemented using a Samsung 65 nm CMOS process. The experimental results show that our ASM-based QRM-MLD MIMO detector shows a maximum throughput of 288 Mbps with a normalized power efficiency of 10.18 Mbps/mW in the case of $4{\times}4$ MIMO with 64-QAM. Under time-varying channel conditions, the proposed reconfigurable MIMO detector also achieves average power savings of up to 35% while maintaining a required BER performance.

• ETRI Journal
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• v.33 no.6
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• pp.897-903
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• 2011

A hybrid ${\Delta}{\Sigma}$ modulator for audio applications is presented in this paper. The pulse generator for digital-to-analog converter alleviates the requirement of the external clock jitter and calibrates the coefficient variation due to a process shift and temperature changes. The input resistor network in the first integrator offers a gain control function in a dB-linear fashion. Also, careful chopper stabilization implementation using return-to-zero scheme in the first continuous-time integrator minimizes both the influence of flicker noise and inflow noise due to chopping. The chip is implemented in a 0.13 ${\mu}m$ CMOS technology (I/O devices) and occupies an active area of 0.37 $mm^2$. The ${\Delta}{\Sigma}$ modulator achieves a dynamic range (A-weighted) of 97.8 dB and a peak signal-to-noise-plus-distortion ratio of 90.0 dB over an audio bandwidth of 20 kHz with a 4.4 mW power consumption from 3.3 V. Also, the gain of the modulator is controlled from -9.5 dB to 8.5 dB, and the performance of the modulator is maintained up to 5 nsRMS external clock jitter.

• ETRI Journal
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• v.35 no.4
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• pp.638-643
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• 2013

This paper presents a 5-bit digital step attenuator (DSA) using a commercial 0.18-${\mu}m$ silicon-on-insulator (SOI) process for the wideband phased array antenna. Both low insertion loss and low root mean square (RMS) phase error and amplitude error are achieved employing two attenuation topologies of the switched path attenuator and the switched T-type attenuator. The attenuation coverage of 31 dB with a least significant bit of 1 dB is achieved at DC to 20 GHz. The RMS phase error and amplitude error are less than $2.5^{\circ}$ and less than 0.5 dB, respectively. The measured insertion loss of the reference state is less than 5.5 dB at 10 GHz. The input return loss and output return loss are each less than 12 dB at DC to 20 GHz. The current consumption is nearly zero with a voltage supply of 1.8 V. The chip size is $0.93mm{\times}0.68mm$, including pads. To the best of the authors' knowledge, this is the first demonstration of a low phase error DC-to-20-GHz SOI DSA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.73-79
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• 2011

This paper describes a reset-free delay-locked loop (DLL) for a memory controller application, with the aid of a hysteresis coarse lock detector. The coarse lock loop in the proposed DLL adjusts the delay between input and output clock within the pull-in range of the main loop phase detector. In addition, it monitors the main loop's lock status by dividing the input clock and counting its multiphase edges. Moreover, by using hysteresis, it controls the coarse lock range, thus reduces jitter. The proposed DLL neither suffers from harmonic lock and stuck problems nor needs an external reset or start-up signal. In a 0.13-${\mu}m$ CMOS process, post-layout simulation demonstrates that, even with a switching supply noise, the peak-to-peak jitter is less than 30 ps over the operating range of 500-1200 MHz. It occupies 0.04 $mm^2$ and dissipates 16.6 mW at 1.2 GHz.

• Journal of IKEEE
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• v.21 no.3
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• pp.260-263
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• 2017

Based on several CPU cores, an SoC including ADCs, DC-DC converter and 2M-byte SRAM is proposed in this paper. The CPU core consists of a 12-bit MENSA, a 32-bit Symmetric multi-core processor, as well as 16-bit CDSP. To eliminate the external SDRAM memory, internal 2M-byte SRAM is implemented. Because the SRAM normally occupies huge area, the parasitic components reduce the speed of SoC. In this work, the SRAM blocks are divided into small pieces to reduce the parasitic components. The proposed SoC is developed in a standard 55nm CMOS process and the speed of SoC is 200MHz.