• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.31-38
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• 1998

Multi-channel sensors can be used to increase the reliability and remove the random iloise in ion-sensitive field effect transistors(ISFETs). Multi-channel sensors is also an essential step toward potential fabrication of sensors for several ionic species in one device. However, when the multi-channel sensors are separately biased, the biasing problems become difficult, that is to say, the bias circuit is needed as many sensors. In this work, a circuit for biasing the four pH-ISFETs in null-balance method, where bias voltages are switched, was proposed. The proposed concept is need only one bias circuit for the four sensors. Therefore it has advantages of smaller size and lower power consumption than the case that all sensors are separately biased at a time. The proposed circuit was tested with discrete devices and its performance was investigated. In the recent trend, sensor systems are implemented as portable systems. So the verified measurement circuit was integrated by using the CMOS circuit. Fortunately, ISFET fabrication process can be compatible with CMOS process. Full circuit has a mask area of $660{\mu}m{\times}500{\mu}m$. In the future, this step will be used for developing the smart sensor system with ISFET.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.178-184
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• 2015

This paper proposes a hardware architecture for high performance Deblocking filter(DBF) in High Efficiency Video Coding for UHD(Ultra High Definition) videos. This proposed hardware architecture which has less processing time has a 4-stage pipelined architecture with two filters and parallel boundary strength module. Also, the proposed filter can be used in low-voltage design by using clock gating architecture in 4-stage pipeline. The segmented memory architecture solves the hazard issue that arises when single port SRAM is accessed. The proposed order of filtering shortens the delay time that arises when storing data into the single port SRAM at the pre-processing stage. The DBF hardware proposed in this paper was designed with Verilog HDL, and was implemented with 22k logic gates as a result of synthesis using TSMC 0.18um CMOS standard cell library. Furthermore, the dynamic frequency can process UHD 8k($7680{\times}4320$) samples@60fps using a frequency of 150MHz with an 8K resolution and maximum dynamic frequency is 285MHz. Result from analysis shows that the proposed DBF hardware architecture operation cycle for one process coding unit has improved by 32% over the previous one.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.12 no.2
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• pp.21-34
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• 2002

In this paper we propos a new hardware architecture of modular exponentiation using a division chain method which has been proposed in (2). Modular exponentiation using the division chain is performed by receding an exponent E as a mixed form of multiplication and addition with divisors d=2 or $d=2^I +1$ and respective remainders r. This calculates the modular exponentiation in about $1.4log_2$E multiplications on average which is much less iterations than $2log_2$E of conventional Binary Method. We designed a linear systolic array multiplier with pipelining and used a horizontal projection on its data dependence graph. So, for k-bit key, two k-bit data frames can be inputted simultaneously and two modular multipliers, each consisting of k/2+3 PE(Processing Element)s, can operate in parallel to accomplish 100% throughput. We propose a new encoding scheme to represent divisors and remainders of the division chain to keep regularity of the data path. When it is synthesized to ASIC using Samsung 0.5 um CMOS standard cell library, the critical path delay is 4.24ns, and resulting performance is estimated to be abort 140 Kbps for a 1024-bit data frame at 200Mhz clock In decryption process, the speed can be enhanced to 560kbps by using CRT(Chinese Remainder Theorem). Futhermore, to satisfy real time requirements we can choose small public exponent E, such as 3,17 or $2^{16} +1$, in encryption and verification process. in which case the performance can reach 7.3Mbps.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.11
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• pp.1627-1634
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• 2021

This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛², power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.252-257
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• 2015

This paper proposes a single slope A/D converter (SSADC) that is possible to process the signal of the ultraviolet, visible and infrared rays with a single chip. And the proposed SSADC is a type of single channel ADC. In the conventional SSADC, it is possible to process the only one signal with a kind of the sensor because the speed of the operating frequency and the slope of ramp signal generated by the ramp generator are fixed. In order to improve the disadvantages, a ramp generator which has variable slope in ramp function is designed and $3{\times}1$ MUX(multiplexer) is adopted so that we can change the speed of the operating frequency and the slope of ramp signal. Therefore, the multiple signal processing of the wanted sensors can be possible. The designed circuit is layout by the $0.35-{\mu}m$ CMOS 2-poly 4-metal technology process and is checked through DRC and LVS tools.