• Title/Summary/Keyword: CMOS Process

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A Study on Width of Dummy Switch for performance improvement in Current Memory (Current Memory의 성능 개선을 위한 Dummy Switch의 Width에 관한 연구)

  • Jo, Ha-Na;Hong, Sun-Yang;Jeon, Seong-Yong;Kim, Seong-Gwon
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2007.04a
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    • pp.485-488
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    • 2007
  • 최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

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A 9 mW Highly-Digitized 802.15.4 Receiver Using Bandpass ∑Δ ADC and IF Level Detection

  • Kwon, Yong-Il;Park, Ta-Joon;Lee, Hai-Young
    • Journal of electromagnetic engineering and science
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    • v.8 no.2
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    • pp.76-83
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    • 2008
  • A low power(9 mW) highly-digitized 2.4 GHz receiver for sensor network applications(IEEE 802.15.4 LR-WPAN) is realized by a $0.18{\mu}m$ CMOS process. We adopted a novel receiver architecture adding an intermediate frequency (IF) level detection scheme to a low-power complex fifth-order continuous-time(CT) bandpass L:tl modulator in order to digitalize the receiver. By the continuous-time bandpass architecture, the proposed $\Sigma\Delta$ modulator requires no additional anti-aliasing filter in front of the modulator. Using the IF detector, the achieved dynamic range(DR) of the over-all system is 95 dB at a sampling rate of 64 MHz. This modulator has a bandwidth of 2 MHz centered at 2 MHz. The power consumption of this receiver is 9.0 mW with a 1.8 V power supply.

A 6-bit 3.3GS/s Current-Steering DAC with Stacked Unit Cell Structure

  • Kim, Si-Nai;Kim, Wan;Lee, Chang-Kyo;Ryu, Seung-Tak
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.3
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    • pp.270-277
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    • 2012
  • This paper presents a new DAC design strategy to achieve a wideband dynamic linearity by increasing the bandwidth of the output impedance. In order to reduce the dominant parasitic capacitance of the conventional matrix structure, all the cells associated with a unit current source and its control are stacked in a single column very closely (stacked unit cell structure). To further reduce the parasitic capacitance, the size of the unit current source is considerably reduced at the sacrifice of matching yield. The degraded matching of the current sources is compensated for by a self-calibration. A prototype 6-bit 3.3-GS/s current-steering full binary DAC was fabricated in a 1P9M 90 nm CMOS process. The DAC shows an SFDR of 36.4 dB at 3.3 GS/s Nyquist input signal. The active area of the DAC occupies only $0.0546mm^2$ (0.21 mm ${\times}$ 0.26 mm).

A 2.5 V 109 dB DR ΔΣ ADC for Audio Application

  • Noh, Gwang-Yol;Ahn, Gil-Cho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.276-281
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    • 2010
  • A 2.5 V feed-forward second-order deltasigma modulator for audio application is presented. A 9-level quantizer with a tree-structured dynamic element matching (DEM) was employed to improve the linearity by shaping the distortion resulted from the capacitor mismatch of the feedback digital-toanalog converter (DAC). A chopper stabilization technique (CHS) is used to reduce the flicker noise in the first integrator. The prototype delta-sigma analogto-digital converter (ADC) implemented in a 65 nm 1P8M CMOS process occupies 0.747 $mm^2$ and achieves 109.1 dB dynamic range (DR), 85.4 dB signal-to-noise ratio (SNR) in a 24 kHz audio signal bandwidth, while consuming 14.75 mW from a 2.5 V supply.

A Spread Spectrum Clock Generator for SATA II with Rounded Hershey-Kiss Modulation Profile

  • Moon, Yong-Hwan;Lim, Wan-Sik;Kim, Tae-Ho;Kang, Jin-Ku
    • Journal of IKEEE
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    • v.15 no.2
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    • pp.129-133
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    • 2011
  • A spread spectrum clock generation is an efficient way to reduce electro-magnetic interference (EMI) radiation in modern mixed signal chip systems. The proposed circuit generates the spread spectrum clock by directly injecting the modulation voltage into the voltage-controlled oscillator (VCO) current source for SATA II. The resulting 33KHz modulation profile has a Hersey-Kiss shape with a rounded peak. The chip has been fabricated using $0.18{\mu}m$ CMOS process and test results show that the proposed circuit achieves 0.509% (5090ppm) down spreading at 1.5GHz and peak power reduction of 10dB. The active chip area is 0.36mm ${\times}$ 0.49mm and the chip consumes 30mW power at 1.5GHz.

Sum-selector generation algorithm based 64-bit adder design (SUM 선택신호 발생 방식을 이용한 64-bit 가산기의 설계)

  • 백우현;김수원
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.1
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    • pp.41-48
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    • 1998
  • This paper proposes a new addition algorithm to improve the addition speed which is one of the important factors for data path functions. We have designed a fast 64-bit adder utilizing al dynamic chain architecture based on the proposed Sum-Selector Generation (SSG) algorithm. Proposed adder is designed with pass-transistor logicto achieve a high speed operation in low voltage circumstance. Realized 64-bit adder with 0.8.mu.m CMOS double-metal process technology has been fully tested. it operates at 185 MHz with 5.0V and chip area occupies 3.66mm$^{2}$. It is also demonstrated that designed adder operates even at 2.0V power supply condition.

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Analysis and Comparison on Full Adder Block in Deep-Submicron Technology (미세공정상에서 전가산기의 해석 및 비교)

  • Lee, Woo-Gi;Kim, Jeong-Beom
    • Proceedings of the KIEE Conference
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    • 2003.11b
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    • pp.67-70
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    • 2003
  • In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.

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A DLL Based Clock Synthesizer with Locking Status Indicator A DLL Based Clock Synthesizer with Locking Status Indicator

  • Ryu Young-Soo;Choi Young-Shig
    • Journal of information and communication convergence engineering
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    • v.3 no.3
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    • pp.142-145
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    • 2005
  • In this paper, a new programmable DLL (delay locked loop) based clock synthesizer is proposed. DLL has several inherent advantages, such as no phase accumulation error, fast locking and easy integration of the loop filter. This paper proposes a new programmable DLL that includes a PFD(phase frequency detector), a LSI(lock status indicator), and a VCDL(voltage controlled delay line) to generate multiple clocks. It can generate clocks from 3 to 9 times of input clock with $2{\mu}s$ locking time. The proposed DLL operating in the frequency range of 300MHZ-900MHz is verified by the HSPICE simulation with a $0.35{\mu}m$ CMOS process.

Graphene Synthesis by Low Temperature Chemical Vapor Deposition and Rapid Thermal Anneal (저온 화학기상증착법 및 급속가열 공정을 이용한 그래핀의 합성)

  • Lim, Sung-Kyu;Mun, Jeong-Hun;Lee, Hi-Deok;Yoo, Jung-Ho;Yang, Jun-Mo;Wang, Jin-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1095-1099
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    • 2009
  • As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

Design of Cryptographic Hardware Architecture for Mobile Computing

  • Kim, Moo-Seop;Kim, Young-Sae;Cho, Hyun-Sook
    • Journal of Information Processing Systems
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    • v.5 no.4
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    • pp.187-196
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    • 2009
  • This paper presents compact cryptographic hardware architecture suitable for the Mobile Trusted Module (MTM) that requires low-area and low-power characteristics. The built-in cryptographic engine in the MTM is one of the most important circuit blocks and contributes to the performance of the whole platform because it is used as the key primitive supporting digital signature, platform integrity and command authentication. Unlike personal computers, mobile platforms have very stringent limitations with respect to available power, physical circuit area, and cost. Therefore special architecture and design methods for a compact cryptographic hardware module are required. The proposed cryptographic hardware has a chip area of 38K gates for RSA and 12.4K gates for unified SHA-1 and SHA-256 respectively on a 0.25um CMOS process. The current consumption of the proposed cryptographic hardware consumes at most 3.96mA for RSA and 2.16mA for SHA computations under the 25MHz.