• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.291-294
• /
• 1996

We present the experimental results of high quality factor (Q) inductors fabricated on high-resistivity silicon wafer using standard CMOS process without any modificatons such as thick gold layer or multilayer interconnection. This demonstrates the possibility of building high Q inductors using lower cost technologies, compared with previous results using complicated process. The comparative analysis is carried out to find the optimized inductor shape for the maximum performance by varying the thickness of metal and number of turns with rectangular shape.

• Journal of electromagnetic engineering and science
• /
• v.14 no.4
• /
• pp.411-414
• /
• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.148-149
• /
• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.193-195
• /
• 2009

This paper aims to develop a low gate source voltage ($V_{gs}$) N-LDMOS element that is fully operational at a CMOS Logic Gate voltage (3.3 or 5 V) realized using the 0.35 μm BCDMOS process. The basic structure of the N-LDMOS element presented here has a Low $V_{gs}$ LDMOS structure to which the thickness of a logic gate oxide is applied. Additional modification has been carried out in order to obtain features of an improved breakdown voltage and a specific on resistance ($R_{sp}$). A N-LDMOS element can be developed with improved features of breakdown voltage and specific on resistance, which is an important criterion for power elements by means of using a proper structure and appropriate process modification. In this paper, the structure has been made to withstand the excessive electrical field on the drain side by applying the double gate oxide structure to the channel area, to improve the specific on resistance in addition to providing a sufficient breakdown voltage margin. It is shown that the resulting modified N-LDMOS structure with the feature of the specific on resistance is improved by 31%, and so it is expected that optimized power efficiencies and the size-effectiveness can be obtained.

• The Transactions of the Korean Institute of Electrical Engineers D
• /
• v.50 no.10
• /
• pp.479-485
• /
• 2001

In this paper, we introduce a charge pump phase-locked loop (PLL) architecture which employs a precharge phase frequency detector (PFD) and a sequential PFD to achieve a high frequency operation and a fast acquisition. Operation frequency is increased by using the precharge PFD when the phase difference is within $-{\pi}{\sim}{\pi}$ and acquisition time is shortened by using the sequential PFD and the increased charge pump current when the phase difference is larger than ${\pm}{\pi}$. So error detection range of the proposed PLL structure is not limited to $-{\pi}{\sim}{\pi}$ and a high frequency operation and a higher speed lock-up time can be achieved. The proposed PLL was designed using 1.5 ${\mu}m$ CMOS technology with 5V supply voltage to verify the lock in process. The proposed PLL shows successful acquisition for 200 MHz input frequency. On the other hand, the conventional PLL with the sequential PFD cannot operate at up to 160MHz. Moreover, the lock-up time is drastically reduced from 7.0 ${\mu}s\;to\;2.0\;{\mu}s$ only if the loop bandwidth to input frequency ratio is regulated by the divide-by-4 counter during the acquisition process. By virtue of this dual PFDs, the proposed PLL structure can improve the trade-off between acquisition behavior and locked behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.801-807
• /
• 2009

In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.

• Journal of IKEEE
• /
• v.27 no.4
• /
• pp.386-390
• /
• 2023

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×10⁷. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.4
• /
• pp.263-268
• /
• 2004

In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.4
• /
• pp.280-285
• /
• 2004

In this paper, a 9-bit analog-to-digital converter (ADC) is designed for optical disk drive (ODD) servo applications. In the ADC, the circuit technique to increase the operating range of the sample-and-hold amplifier is proposed, which can process the wide-varying input common-mode range. The algorithmic ADC structure is chosen so that the area can be significantly reduced, which is suitable for SoC integration. The ADC is fabricated in a 0.18-$\mu\textrm{m} $ CMOS 1P5M technology. Measurement results of the ADC show that SNDR is 51.5dB for the sampling rate of 6.5MS/s. The power dissipation is 36.3mW for a single supply voltage of 3.3V.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.2
• /
• pp.324-328
• /
• 2012

A recovered jitter of CDR(Clock and Data Recovery) Circuit based on Dual-loop DLL(Delay Locked Loop) for data recovery in high speed serial data communication is changed by depending on the input data and reference clock frequency. In this paper, 2-step DPC which has constant jitter performance for wide-range input frequency is proposed. The designed prototype 2-step CDR using proposed 2-step DPC has operation frequency between 200Mbps and 4Gbps. Average delay step of 2-step DPC is 10ps. Designed CDR circuit was tested with 0.18um CMOS process.