Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of Si monolithic inductors using high resistivity substrate

고저항 실리콘 기판을 이용한 마이크로 웨이브 인덕터의 제작

  • Park, Min (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Hyeon, Yeong-Cheol (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Kim, Choon-Soo (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Yu, Hyun-Kyu (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Koo, Jin-Gun (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Nam, Kee-Soo (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Lee, Seong-Hearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • 박민 (한국전자통신연구소 반도체연구단) ;
  • 현영철 (한국전자통신연구소 반도체연구단) ;
  • 김천수 (한국전자통신연구소 반도체연구단) ;
  • 유현규 (한국전자통신연구소 반도체연구단) ;
  • 구진근 (한국전자통신연구소 반도체연구단) ;
  • 남기수 (한국전자통신연구소 반도체연구단) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Published : 1996.11.01
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Abstract

We present the experimental results of high quality factor (Q) inductors fabricated on high-resistivity silicon wafer using standard CMOS process without any modificatons such as thick gold layer or multilayer interconnection. This demonstrates the possibility of building high Q inductors using lower cost technologies, compared with previous results using complicated process. The comparative analysis is carried out to find the optimized inductor shape for the maximum performance by varying the thickness of metal and number of turns with rectangular shape.

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