• Title/Summary/Keyword: CMOS Power Amplifier

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A MedRadio-Band Low Power Low Noise Amplifier for Medical Devices (의료기기용 MedRadio 대역 저전력 저잡음 증폭기)

  • Kim, Taejong;Kwon, Kuduck
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.9
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    • pp.62-66
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    • 2016
  • This paper presents a MedRadio-band low power low noise amplifier for Medical Devices. A proposed MedRadio-band low power low noise amplifier adopts a current-reuse resistive feedback topology to increase overall gm and reduce power consumption. The gain of the LNA increases by the Q-factor of the additional series RLC input matching network, and its noise figure is minimized by the similar factor. Furthermore, it consumes low power because of low supply voltage and current reuse technique. By exploiting the $g_m$-booting and matching network property, the proposed MedRadio-band low noise amplifier achieves a noise figure of 0.85 dB, a voltage gain of 30 dB, and IIP3 of -7.9 dBm while consuming 0.18 mA from a 1 V supply voltage in $0.13{\mu}m$ CMOS technology.

A 6.5 - 8.5 GHz CMOS UWB Transmitter Using Switched LC VCO

  • Eo, Yun Seong;Park, Myung Cheol;Ha, Min-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.417-422
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    • 2015
  • A 6.5 - 8.5 GHz CMOS UWB transmitter is implemented using $0.18{\mu}m$ CMOS technology. The transmitter is mainly composed of switched LC VCO and digital pulse generator (DPG). Using RF switch and DPG, the uniform power and sidelobe rejection are achieved irrespective of the carrier frequency. The measured UWB carrier frequency range is 7 ~ 8 GHz and the pulse width is tunable from 1 to 2 ns. The measured energy efficiency per pulse is 2.1 % and the power consumption is 0.6 mW at 10 Mbps without the buffer amplifier. The chip core size is $0.72mm^2$.

A Study on the Optimum Design for 3 V CMOS Operational Amplifier with Rail-to-Rail Input Stage and Output Stage (Rail-to-Rail 입력단과 출력단을 갖는 3 V CMOS 연산증폭기의 최적 설계에 관한 연구)

  • Park, Yong-Hee;Hwang, Sang-Joon;Sung, Man-Young;Kim, Seong-Jeen
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1120-1122
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    • 1995
  • This paper presents a 2-stage, simple, power-efficient 3V CMOS operational amplifier and its equation based design optimization. Because of its simple structure, it is very suitable as a VLSI library cell in analog/digital mixed-mode systems. The op-amp, which contains a constant-$g_m$ rail-to-rail input stage and a simple feedforward class-AB rail-to-rail output stage, is analyzed and the results are presented in the form of design equations and procedures, which provide an insight into the trade-offs among performance requirements. The results of SPICE simulations are shown to agree very welt with the use of design equations.

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Time-Domain Analog Signal Processing Techniques

  • Kang, Jin-Gyu;Kim, Kyungmin;Yoo, Changsik
    • Journal of Semiconductor Engineering
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    • v.1 no.2
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    • pp.64-73
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    • 2020
  • As CMOS technology scales down, the design of analog signal processing circuit becomes far more difficult because of steadily decreasing supply voltage and smaller intrinsic gain of transistors. With sub-1V supply voltage, the conventional analog signal processing relying on high-gain amplifiers is not an effective solution and different approach has to be sought. One of the promising approaches is "time-domain analog signal processing" which exploits the improving switching speed of transistors in a scaled CMOS technology. In this paper, various time-domain analog signal processing techniques are explained with some experimental results.

Multi-Stage CMOS OTA Frequency Compensation: Genetic algorithm approach

  • Mohammad Ali Bandari;Mohammad Bagher Tavakoli;Farbod Setoudeh;Massoud Dousti
    • ETRI Journal
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    • v.45 no.4
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    • pp.690-703
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    • 2023
  • Multistage amplifiers have become appropriate choices for high-speed electronics and data conversion. Because of the large number of high-impedance nodes, frequency compensation has become the biggest challenge in the design of multistage amplifiers. The new compensation technique in this study uses two differential stages to organize feedforward and feedback paths. Five Miller loops and a 500-pF load capacitor are driven by just two tiny compensating capacitors, each with a capacitance of less than 10 pF. The symbolic transfer function is calculated to estimate the circuit dynamics and HSPICE and TSMC 0.18 ㎛. CMOS technology is used to simulate the proposed five-stage amplifier. A straightforward iterative approach is also used to optimize the circuit parameters given a known cost function. According to simulation and mathematical results, the proposed structure has a DC gain of 190 dB, a gain bandwidth product of 15 MHz, a phase margin of 89°, and a power dissipation of 590 ㎼.

A 500MHz 1.1㎱ 32kb SRAM Macro with Selective Bit-line Precharge Scheme (선택적 프리차지 방법을 갖는 500MHz 1.1㎱ 32kb SRAM 마크로 설계)

  • 김세준;장일권곽계달
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.699-702
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    • 1998
  • This paper presents a 500MHz 1.1㎱ 32kb synchronous CMOS SRAM macro using $0.35\mu\textrm{m}$ CMOS technology. In order to operate at high frequency and reduce power dissipation, the designed SRAM macro is realized with optimized decoder, multi-point sense amplifier(MPSA), selective precharge scheme and etc. Optimized decorder and MPSA respectively reduce 50% and 40% of delay time. Also, a selective precharge scheme reduces 80% of power dissipation in that part.

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Potentiostat circuits for amperometric sensor (전류법 기반 센서의 정전압 분극 장치 회로)

  • Lim, Shin-Il
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.95-101
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    • 2009
  • A simple and new CMOS potentiostat circuit for amperometric sensor is described. To maintain a constant potential between the reference and working electrodes, only one differential difference amplifier (DDA) is needed in proposed design, while conventional potentiosatat requires at least 2 operational amplifiers and 2 resistors, or more than 3 operational amplifiers and 4 resistors for low voltage CMOS integrated potentiostat. The DDA with rail-to-rail design not only enables the full range operation to supply voltage but also provides simple potentiostat system with small hardwares and low power consumption.

Design of Two-Stage Class AB CMOS Buffers: A Systematic Approach

  • Martin, Antonio Lopez;Miguel, Jose Maria Algueta;Acosta, Lucia;Ramirez-Angulo, Jaime;Carvajal, Ramon Gonzalez
    • ETRI Journal
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    • v.33 no.3
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    • pp.393-400
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    • 2011
  • A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 ${\mu}m$ CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 ${\mu}W$).

A 900 MHz ZigBee CMOS RF Transceiver Using Switchless Matching Network (무스위치 정합 네트워크를 이용한 900 MHz ZigBee CMOS RF 송수신기)

  • Jang, Won Il;Eo, Yun Seong;Park, Hyung Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.8
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    • pp.610-618
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    • 2017
  • This paper presents a 868/915 MHz CMOS RF transceiver for the ZigBee application. Using a switchless matching network, the off chip switch is removed to achieve the low cost RF transceiver, and by the elimination of the switch's insertion loss we can achieve the benefits for the RF receiver's noise figure and transmitter's power efficiency at the given output power. The receiver is composed of low-noise amplifier, mixer, and baseband analog(BBA) circuit. The transmitter is composed of BBA, mixer, and driver amplifier. And, the integer N type frequency synthesizer is designed. The proposed ZigBee RF full transceiver is implemented on the $0.18{\mu}m$ CMOS technology. Measurement results show that the maximum gain and the noise figure of the receiver are 97.6 dB and 6.8 dB, respectively. The receiver consumes 32 mA in the receiver mode and the transmitter 33 mA in the transmission mode.

Ka-Band Variable-Gain CMOS Low Noise Amplifier for Satellite Communication System (위성 통신 시스템을 위한 Ka-band 이득제어 CMOS 저잡음 증폭기)

  • Im, Hyemin;Jung, Hayeon;Lee, Jaeyong;Park, Sungkyu;Park, Changkun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.8
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    • pp.959-965
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    • 2019
  • In this paper, we design a low noise amplifier to support ka-band satellite communication systems using 65-nm RFCMOS process. The proposed low noise amplifier is designed with high-gain mode and low-gain mode, and is designed to control the gain according to the magnitude of the input signal. In order to reduce the power consumption, the supply voltage of the entire circuit is limited to 1 V or less. We proposed the gain control circuit that consists of the inverter structure. The 3D EM simulator is used to reduce the size of the circuit. The size of the designed amplifier including pad is $0.33mm^2$. The fabricated amplifier has a -7 dB gain control range in 3 dB bandwidth and the reflection coefficient is less than -6 dB in high gain mode and less than -15 dB in low gain mode.