• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.479-482
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• 1993

A fully balanced differential amplifier can achieve high-gain wide-bandwidth characteristics. And also, Offset PSRR, CMRR and Noise performance of that are excellent, but these merits can be achieved only when the architecture holds fully balanced. Commonly, the fully balanced differential amplifier has a common mode feedback(CMFB) circuit in order to maintain the balance. This paper presents improved characteristics of the CMFB circuit and designs the wide-bandwidth CMOS Op-amp. The unity gain bandwidth of this Op-amp is 50MHz with the load capacitor 2pF, and the value of phase margin is $85^{\circ}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.75-87
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• 2012

A design paradigm using sequential geometric programming is presented to accurately design CMOS op amps with BSIM3. It is based on new adaptive modeling of transistor parameters through the operating point simulation. This has low modeling cost as well as great simplicity and high accuracy. The short-channel dc, high-frequency small-signal, and short-channel noise models are used to characterize the physical behavior of submicron devices. For low-power and low-voltage design, this paradigm is extended to op amps operating in the subthreshold region. Since the biasing and modeling errors are less than 0.25%, the characteristics of the op amps well match simulation results. In addition, small dependency of design results on initial values indicates that a designed op amp may be close to the global optimum. Finally, the design paradigm is illustrated by optimizing CMOS op amps with accurate transfer function.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.2
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• pp.22-28
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• 1998

A $g_m$-control technique using a new electronic zener diode (EZD) for CMOS rail-torail input stages is presented. A regulated CMOS inverter is used as an EZD to obtain a constant-$g_m$ input stage. The turn-off characteristic of the proposed EZD is better than that of the existing EZD using two complementarey diodes, and thus, better $g_m$-control can be achieved. With this input stage, a 3V constant-$g_m$ rail-to-rail CMOS op-amp has been designed and fabricated using a $0.8\mu\extrm{m}$single-poly, double-metal CMOS process. Measurements results show that the $g_m$ variation is about 6% over the entire input common-mode range, and the op-amp has a dc gain of 88dB and a unity-gain frequency of 4MHz for $C_L=20pF, R_L=10k\Omega$

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.133-136
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• 2000

A new Op-Amp output buffer is presented for driving large-size LCD panels. The proposed Op-Amp is designed by combining a common source and a common drain amplifier to have a high slew rate and to minimize the quiescent current. The proposed circuits are simulated in a high-voltage 0.6${\mu}{\textrm}{m}$ CMOS process, dissipates only 20${\mu}{\textrm}{m}$ static current, and have 83dB open-loop DC gain and 60$^{\circ}$phase margin.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.189-192
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• 2000

In this paper, we propose the novel test method to detect short and open faults in CMOS Op-amp. The proposed method is composed of two test steps - the offset and the high frequency test. Using HSPICE simulation, we get a 100％ fault coverage. To verify the proposed method, we design and fabricate the CMOS op-amp that contains various short and open faults through Hyundai 0.65$\mu\textrm{m}$ 2-poly 2-metal CMOS process. Experimental results of fabricated chip demonstrate that the proposed test method can detect short and open faults in CMOS Op-amp.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.239-247
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• 1996

The accuracy of sample-and-hold amplifiers (SHA's) empolying a CMOS process in limited by nonideal factors such as linearity errors of an op amp and feedthrough errors of switches. In this work, after some linearity improvement techniques for an op amp are discussed, three different SHA's for video signal processing are designed, simulated, and compared. The CMOS SHA design techniques with a 12-bit level accuracy are proposed by minimizing cirucit errors based on the simulated results.

• Journal of IKEEE
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• v.24 no.4
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• pp.942-949
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• 2020

In this paper, we propose an improved algorithmic ADC for CMOS Image Sensor that is suitable for a column-parallel readout circuit. The algorithm of the conventional algorithmic ADC is modified so that it can operate as a single amplifier while being independent of the capacitor ratio and insensitive to the gain of the op-amp, and it has a high conversion efficiency by using an adaptive biasing amplifier. The proposed ADC is designed with 0.18-um Magnachip CMOS process, Spectre simulation shows that the power consumption per conversion speed is reduced by 37% compared with the conventional algorithmic ADC.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.28-32
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• 2005

In this paper, we propose a novel test method to effectively detect hard and soft faults in CMOS 2-stage op-amps. The proposed method uses a very high frequency sinusoidal signal that exceeds unit gain bandwidth to maximize the fault effects. Since the proposed test method doesn't require any complex algorithms to generate the test pattern and uses only a single test pattern to detect all target faults, therefore test costs can be much reduced. The area overhead is also very small because the CUT is converted to a unit gain amplifier. Using HSPICE simulation, the results indicated a high degree of fault coverage for hard and soft faults in CMOS 2-stage op-amps. To verify this proposed method, we fabricated a CMOS op-amp that contained various short and open faults through the Hyundai 0.65-um 2-poly 2-metal CMOS process. Experimental results for the fabricated chip have shown that the proposed test method can effectively detect hard and soft faults in CMOS op-amps.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.1-6
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• 2001

In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.