• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.956-958
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• 1999

We designed and fabricated p-type MOSFETs with floating gate in n-type well lesion and examined their photo characteristics. The fabricated MOBFETs showed a high photo-respsonse characteristics, indicating a possibility as a photo sensor. The structures of MOSFETs were changed as to the number of gate and channel. As the number of channel increased, the induced current by light source s increased. However, the effect of the number of gate was negligble on the photo-response characteristics of the device.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.4
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• pp.63-69
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• 2012

This paper describes novel scheme of a gray scale capacitive fingerprint image for high-accuracy capacitive sensor chip. The typical gray scale image scheme used a DAC of big size layout or charge-pump circuit of non-volatile memory with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit of charge sharing scheme is proposed, which uses DLC(down literal circuit) based on a neuron MOS(vMOS) and analog simple multiplexor. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, a pixel layout size can be reduced and the image resolution can be improved.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.7
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• pp.1581-1588
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• 2010

Most digital cameras use a single image sensor with Color Filter Array(CFA) for the advantage of costs and speed. The various color interpolation(demosaicing) algorithms are researched to reconstruct a full representation of the image. In this paper, we proposed a method of demosaicing about using weighted directional filter for vertical, horizontal, and diagonal direction edge. The method considered the efficiency of hardware resources for hardware implementation. The performance of proposed method was confirmed by comparing the conventional method in experiments using 24 Kodak test images. The proposed method was designed by Verilog HDL and was verified by using Virtex4 FPGA boards and CMOS Image Sensor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.2
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• pp.445-452
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• 2010

In this paper, an attempt has been made to design the controller applicable for H.264 level3 encoder of baseline profile on full hardware basis. The designed controller module first stores the images supplied from CMOS Image Sensor(CIS) at main memory, and then reads or stores the image data in macroblock unit according to encoder operation. The timing cycle of the DMA controller required to process a macroblock is 478 cycles. In order to verify the our design, reference-C encoder, which is compatible to JM 9.4, is developed and the designed controller is verified by using the test vector generated from the reference C code. The number of cycle in the designed DMA controller is reduced by 40% compared with the cycle of using Xilinx MIG.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.4
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• pp.753-758
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• 2009

Recently the high-end CMOS image sensors are developed, conforming to the SMIA CCP2 specification, which is a high-speed low-power serial interface based on LVDS technology. But this kind of technology trend makes the existing equipments are no longer useful, although their capability is still good enough to handle the recent image sensors if there was no interfacing problem. In this paper, we propose and realize a data protocol conversion system that translates the SMIA CCP2 serial signals into the existing 10-bit parallel signals. The proposed system is composed of a de-serializer and a FPCA chip, and thus can be constructed on a small PCB which enables easy integration between the existing equipments and the new high-end image sensors. Besides, the maximum transfer rate by the SMIA specification is also achieved on the implemented system. So it is expected that the implemented system can be used as a general-purpose protocol converter in a variety of sensor-related application fields.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.795-797
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• 2013

This paper describes a charge sharing capacitive-sensing circuit technique that improves the quality of images captured with fingerprint sensor LSIs. When the finger is dry, the electrical resistance of a finger surface is high. It leads to poor image quality. To capture clear images even when the finger is dry, the modified capacitive detection circuit improves the image quality using an enhancement plate at the finger surface and a voltage control circuit. The test circuit is analyzed on $0.35{\mu}m$ CMOS process.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.27-34
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• 2020

Human access is restricted to environment where radiation sources are used, however observation equipment should be radiation-resistant as it is exposed. Therefore, if tungsten with the highest specific gravity and melting point and the lowest lead were selected to reduce the dose to the Cobalt 60 radiation source to 1/8, Tu had a volume of 432.6cm3, a thickness of 2.4cm, and Pb had a volume of 961cm3,, a thickness of 3.6cm. By applying this method, produced a radiation resistant CMOS camera with a camera module using a CMOS Image sensor and a radiation shielding structured housing. As a result of applying the head detachable 2M AHD camera (No. ①) that survived the experiment to select the optimal shielding thickness, when shielding the associated equipment such as cameras, adapters, etc. is achieved, it was confirmed that the design of the structure is appropriate by operating well at doses higher than 1.88×106rad. Therefore, it is expected to secure the camera technology and business feasibility that can be applied to high radiation environments.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.251-257
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• 2010

In this paper, we propose modified algorithm of motion vector detection for the pixel of image in the optical sensor. It is designed to reduce the amount of operation and have more accuracy in the motion detection than previous block matching algorithm. The proposed algorithm is implemented with Cyclone and fabricated using SEC 0.35um CMOS 1-poly-4-metal technology. The result of test with CARTESIAN ROBOT meets the desired performance.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.274-279
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• 2009

In this paper, a wide dynamic range active pixel sensor(APS) with output voltage feedback structure has been designed by a 2-poly 4-metal 0.35 $\mu$m standard CMOS technology. We presented a novel APS with output voltage feedback, which exhibits a wide dynamic range. The dynamic range increases at the cost of an additional diode and an additional MOSFET. The output voltage feedback structure enables the control of the output voltage level by itself, as incident light power varies. It is confirmed that the light level which the output voltage level of proposed APS is saturated is about 120,000 lux, which is higher than that of a conventional 3-transistor APS.