• Title/Summary/Keyword: CMOS DAC

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Design of a 10-bit SAR ADC with Enhancement of Linearity On C-DAC Array (C-DAC Array내 선형성을 향상시킨 10비트 CMOS SAR ADC 설계)

  • Kim, Jeong Heum;Lee, Sang Heon;Yoon, Kwang Sub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.2
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    • pp.47-52
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    • 2017
  • In this paper, CMOS SAR A/D converter 1.8V supply for the design of an A/D converter having an middle speed for the biological signal processing was designed. This paper proposes design of a 10-bit SAR Analog to Digital Converter improving linearity driven by MSB node of C-DAC array divided into 4 equal parts. It enhances linearity property, by retaining the analog input signal charging time at MSB node. Because MSB node samples analog input, it enhances resolution through getting initial input signal precisely. By using split capacitor on C-DAC array, it reduced chip size and power dissipation. The Proposed SAR A/D Converter is fabricated in 0.18um CMOS and measured 7.5 bits of ENOB at sampling frequency 4MS/s and power supply of 1.8V. It occupies a core area of $850{\times}650um^2$ and consumes 123.105uW. Therefore it results in 170.016fJ/step of FOM(Figure of Merit).

A 3 V 12b 100 MS/s CMOS D/A Converter for High-Speed Communication Systems

  • Kim, Min-Jung;Bae, Hyuen-Hee;Yoon, Jin-Sik;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.4
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    • pp.211-216
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

Design of a Small Area 12-bit 300MSPS CMOS D/A Converter for Display Systems (디스플레이 시스템을 위한 소면적 12-bit 300MSPS CMOS D/A 변환기의 설계)

  • Shin, Seung-Chul;Moon, Jun-Ho;Song, Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.1-9
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    • 2009
  • In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

Built-In Self-Test of DAC using CMOS Structure (CMOS 구조를 이용한 DAC의 자체 테스트 기법에 관한 연구)

  • Cho, Sung-Chan;Kim, In-Soo;Min, Hyoung-Bok
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1862-1863
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    • 2007
  • Testing the analog/mixed-signal circuitry of a mixed-signal IC has become a difficult task. Offset error, gain error, Non-monotonic behavior, Differential Non-linearity(DNL) error, Integral Non-linearity(INL) error are important specifications used as test parameters for DAC. In this paper, we propose an efficient BIST structure for DAC testing. The proposed BIST adds the circuit which uses the capacitor and op-amp, and accomplishes a test.

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A 10-bit CMOS Time-Interpolation Digital-to-Analog Converter (10-비트 CMOS 시간-인터폴레이션 디지털-아날로그 변환기)

  • Kim, Myngyu;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.225-228
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    • 2012
  • In this paper, a 10-bit digital-to-analog converter (DAC) with small area is proposed. The 10-bit DAC consists of a 8-bit decoder, a 2-bit time-interpolator, and a buffer amplifier. The proposed time-interpolation is achieved by controlling the charging time through a low-pass filter composed of a resistor and a capacitor. To implement the accurate time-interpolator, a control pulse generator using a replica circuit is proposed to minimize the effect of the process variation. The proposed 10-bit Time-Interpolation DAC occupies 61 % of the conventional 10-bit resistor-string DAC. The proposed DAC is designed using a $0.35{\mu}m$ CMOS process with a 3.3 V supply. The simulated DNL and INL are +0.15/-0.21 LSB and +0.15/-0.16 LSB, respectively.

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A Low-Power 1 Ms/s 12-bit Two Step Resistor String Type DAC in 0.18 ㎛ CMOS Process (0.18 ㎛ CMOS 공정을 이용한 저 전력 1 Ms/s 12-bit 2 단계 저항 열 방식 DAC)

  • Yoo, MyungSeob;Park, HyungGu;Kim, HongJim;Lee, DongSoo;Lee, SungHo;Lee, KangYoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.5
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    • pp.67-74
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    • 2013
  • A low-power 12-bit resistor string DAC for wireless sensor applications is presented. Two-step approach reduces complexity, minimizes power consumption and area, and increases speed. This chip is fabricated in 0.18-${\mu}m$ CMOS and the die area is $0.76mm{\times}0.56mm$. The measured power consumption is 1.8mW from the supply voltage of 1.8V. Measured SFDR(Spurious-Free Dynamic Range) is 70dB when the sampling frequency is less than 1 MHz.

A 10b 100MS/s 0.13um CMOS D/A Converter Based on A Segmented Local Matching Technique (세그먼트 부분 정합 기법 기반의 10비트 100MS/s 0.13um CMOS D/A 변환기 설계)

  • Hwang, Tae-Ho;Kim, Cha-Dong;Choi, Hee-Cheol;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.4
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    • pp.62-68
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    • 2010
  • This work proposes a 10b 100MS/s DAC based on a segmented local matching technique primarily for small chip area. The proposed DAC employing a segmented current-steering structure shows the required high linearity even with the small number of devices and demonstrates a fast settling behavior at resistive loads. The proposed segmented local matching technique reduces the number of current cells to be matched and the size of MOS transistors while a double-cascode topology of current cells achieves a high output impedance even with minimum sized devices. The prototype DAC implemented in a 0.13um CMOS technology occupies a die area of $0.13mm^2$ and drives a $50{\Omega}$ load resistor with a full-scale single output voltage of $1.0V_{p-p}$ at a 3.3V power supply. The measured DNL and INL are within 0.73LSB and 0.76LSB, respectively. The maximum measured SFDR is 58.6dB at a 100MS/s conversion rate.

A Low Power Current-Steering DAC Selecting Clock Enable Signal (선택적으로 클럭 신호를 입력하는 저 전력 전류구동 디지털-아날로그 변환기)

  • Yang, Byung-Do;Min, Jae-Joong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.10
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    • pp.39-45
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    • 2011
  • This paper proposes a low power current-steering 10-bit DAC selecting clock enable signal. The proposed DAC reduces the clock power by cutting the clock signal to the current-source cells in wihich the data will not be changed. The proposed DAC was implemented using a 0.13${\mu}m$ CMOS process with $V_{DD}=1.2V$. Its core area is 0.21$mm^2$. It consumes 4.46mW at 1MHz signal frequency and 200MHz sampling rate. The clock power is reduced to 30.9% and 36.2% of a conventional DAC at 1.25MHz and 10MHz signal frequencies, respectively. The measured SFDRs are 72.8dB and 56.1dB at 1MHz and 50MHz signal frequencies, respectively.

A 10-bit 100 MSPS CMOS D/A Converter with a Self Calibration Current Bias Circuit (Self Calibration Current Bias 회로에 의한 10-bit 100 MSPS CMOS D/A 변환기의 설계)

  • 이한수;송원철;송민규
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.11
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    • pp.83-94
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    • 2003
  • In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6+4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

Design of a Digitally Controlled LC Oscillator Using DAC for WLAN Applications (WLAN 응용을 위한 DAC를 이용한 Digitally Controlled LC Oscillator 설계)

  • Seo, Hee-Teak;Park, Jun-Ho;Kwon, Duck-Ki;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.15 no.1
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    • pp.29-36
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    • 2011
  • Dithering scheme has been widely used to improve the resolution of DCO(Digitally Controlled Oscillator) in conventional ADPLLs(All Digital Phase Locked Loop). In this paper a new resolution improvement scheme is proposed where a simple DAC is employed to overcome the problems of dithering scheme. A 2.4GHz LC-based DCO has been designed in a $0.13{\mu}m$ CMOS process with an enhanced frequency resolution for wireless local area network applications. It has a frequency tuning range of 900MHz and a resolution of 58.8Hz. The frequencies are controled by varactors in coarse, fine, and DAC bank. The DAC bank consists of an inversion mode NMOS varactor. The other varactor banks consist of PMOS varactors. Each varactor bank is controlled by 8bit digital signal. The designed DCO exhibits a phase noise of -123.8dBc/Hz at 1MHz frequency offset. The DCO core consumes 4.2mA from 1.2V supply.