• Title/Summary/Keyword: CMOS 고속회로

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Design of a Low Power 10bit Flash SAR A/D Converter (저 전력 10비트 플래시-SAR A/D 변환기 설계)

  • Lee, Gi-Yoon;Kim, Jeong-Heum;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.4
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    • pp.613-618
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    • 2015
  • This paper proposed a low power CMOS Flash-SAR A/D converter which consists of a Flash A/D converter for 2 most significant bits and a SAR A/D converter with capacitor D/A converter for 8 least significant bits. Employment of a Flash A/D converter allows the proposed circuit to enhance the conversion speed. The SAR A/D converter with capacitor D/A converter provides a low power dissipation. The proposed A/D converter consumes $136{\mu}W$ with a power supply of 1V under a $0.18{\mu}m$ CMOS process and achieves 9.16 effective number of bits for sampling frequency up to 2MHz. Therefore it results in 120fJ/step of Figure of Merit (FoM).

Design Methodology of the Frequency-Adaptive Negative-Delay Circuit (주파수 적응성을 갖는 부지연 회로의 설계기법)

  • Kim, Dae-Jeong
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.37 no.3
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    • pp.44-54
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    • 2000
  • In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

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Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model (등가회로 모델에 의한 레이저다이오드의 누설전류 해석)

  • Choi, Young-Kyu;Kim, Ki-Rae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.2
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    • pp.330-336
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    • 2007
  • A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

Design of Low Power and High Speed NCL Gates (저전력 고속 NCL 비동기 게이트 설계)

  • Kim, Kyung Ki
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.2
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    • pp.112-118
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    • 2015
  • Conventional synchronous circuits cannot keep the circuit performance, and cannot even guarantee correct operations under the influence of PVT variations and aging effects in the nanometer regime. Therefore, in this paper, a DI (delay insensitive) design based NCL (Null Convention Logic) design methodology with a very simple design structure has been used to design digital systems, which is one of well-known asynchronous design methods robust to various variations and does not require any timing analysis. Because circuit-level structures of conventional NCL gates have weakness of low speed, high area overhead or high wire complexity, this paper proposes a new lNCL gates designed at the transistor level for high-speed, low area overhead, and low wire complexity. The proposed NCL gate libraries have been compared to the conventional NCL gates in terms of circuit delay, area and power consumption using a asynchronous multiplier implemented in dongbu 0.11um CMOS technology.

A Radio-Frequency PLL Using a High-Speed VCO with an Improved Negative Skewed Delay Scheme (향상된 부 스큐 고속 VCO를 이용한 초고주파 PLL)

  • Kim, Sung-Ha;Kim, Sam-Dong;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.42 no.6
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    • pp.23-36
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    • 2005
  • PLLs have been widely used for many applications including communication systems. This paper presents a VCO with an improved negative skewed delay scheme and a PLL using this VCO. The proposed VCO and PLL are intended for replacing traditional LC oscillators and PLLs used in communication systems and other applications. The circuit designs of the VCO and PLL are based on 0.18um CMOS technology with 1.8V supply voltage. The proposed VCO employs subfeedback loops using pass-transistors and needs two opposite control voltages for the pass transistors. The subfeedback loops speed up oscillation depending on the control voltages and thus provide a high oscillation frequency. The two voltage controls have opposite frequency gain characteristics and result in low phase-noise. The 7-stage VCO in 0.18um CMOS technology operates from $3.2GHz\~6.3GHz$ with phase noise of about -128.8 dBc/Hz at 1MHz frequency onset. For 1.8V supply voltage, the current consumption is about 3.8mA. The proposed PLL has dual loop-filters for the proposed VCO. The PLL is operated at 5GHz with 1.8V supply voltage. These results indicate that the proposed VCO can be used for radio frequency operations replacing LC oscillators. The circuits have been designed and simulated using 0.18um TSMC library.

Design of clock duty-cycle correction circuits for high-speed SoCs (고속 SoC를 위한 클락 듀티 보정회로의 설계)

  • Han, Sang Woo;Kim, Jong Sun
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.5
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    • pp.51-58
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    • 2013
  • A clock duty-cycle corrector (DCC) which is an essential device of clocking circuits for high-speed system-on-chip (SoC) design is introduced in this paper. The architectures and operation of conventional analog feedback DCCs and digital feedback DCCs are compared and analyzed. A new mixed-mode feedback DCC that combines the advantages of analog DCCs and digital DCCs to achieve a wider duty-cycle correction range, higher operating frequency, and higher duty-cycle correction accuracy is presented. Especially, the architectures and design of a mixed-mode duty-cycle amplifier (DCA) which is a core unit circuit of a mixed-mode DCC is presented in detail. Two mixed-mode DCCs based on a single-stage DCA and a two-stage DCA were designed in a 0.18-${\mu}m$ CMOS process, and it is proven that the two-stage DCA-based DCC has a wider duty-cycler correction range and smaller duty-cycle correction error.

Design of Look-up Table in Huffman CODEC Using DBLCAM and Two-port SRAM (DBLCAM과 Two-port SRAM을 이용한 허프만 코덱의 Look-up Table 설계)

  • 이완범;하창우;김환용
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.10
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    • pp.57-64
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    • 2002
  • The structure of conventional CAM(Content Addressable Memory) cell, used to Look-up table scheme in Huffman CODEC, is not performed by being separated in reading, writing and match operation. So, there is disadvantages that the control is complicated, and the floating states of match line force wrong operation to be happened in reading, writing operation. In this paper, in order to improve the disadvantages and proces the data fast, fast Look-up table is designed using DBLCAM(Dual Bit Line CAM)-performing the reading, writing operation and match operation independently and Two-port SRAM being more fast than RAM in an access speed. Look-up table scheme in Huffman CODEC, using DBLCAM and Two-port SRAM proposed in this paper, is designed in Cadence tool, and layout is performed in 0.6${\mu}{\textrm}{m}$ 2-poly 3-metal CMOS full custom. And simulation is peformed with Hspice.

An MPEG-2 AAC Encoder Chip Design Operating under 70MIPS (70MIPS 이내에서 동작하는 MPEG-2 AAC 부호화 칩 설계)

  • Kang Hee-Chul;Park Ju-Sung;Jung Kab-Ju;Park Jong-In;Choi Byung-Gab;Kim Tae-Hoon;Kim Sung-Woo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.4 s.334
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    • pp.61-68
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    • 2005
  • A chip, which can fast encoder the audio data to AAC (Advanced Audio Coding) LC(Low Complexity) that is MPEG-2 audio standard, has been designed on the basis of a 32 bits DSP core and fabricated with 0.25um CMOS technology. At first, the various optimization methods for implementing the algerian are devised to reduce the memory size and calculation cycles. FFT(Fast Fourier Transform) hardware block is added to the DSP core to get the more reduction of the calculation cycles. The chips has the size of $7.20\times7.20 mm^2$ and about 830,000 equivalent gates, can carry out AAC encoding under 70MIPS(Million Instructions per Second).

Analog-to-Digital Converter using Pipelined Comparator Array (파이프라인드식 비교기 배열을 이용한 아날로그 디지털 변환기)

  • Son, Ju-Ho;Jo, Seong-Ik;Kim, Dong-Yong
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.37 no.2
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    • pp.37-42
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    • 2000
  • In this paper, The high-speed, low-Power analog-to-digital conversion structure is proposed using the pipelined comparator away for high-speed conversion rate and the successive- approximation structure for low-power consumption. This structure is the successive-approximation structure using pipelined comparator array to change the reference voltage during the holding time. An 8-bit 10MS/s analog-to-digital converter is designed using 0.8${\mu}{\textrm}{m}$ CMOS technology. The INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 41㏈ at a sampling rate of 10MHz with 100KHz sine input signal. The Power consumption is 4.14㎽ at 10MS/s.

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High-Throughput QC-LDPC Decoder Architecture for Multi-Gigabit WPAN Systems (멀티-기가비트 WPAN 시스템을 위한 고속 QC-LDPC 복호기 구조)

  • Lee, Hanho;Ajaz, Sabooh
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.2
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    • pp.104-113
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    • 2013
  • A high-throughput Quasi-Cyclic Low-Density Parity-Check (QC-LDPC) decoder architecture is proposed for 60GHz multi-gigabit wireless personal area network (WPAN) applications. Two novel techniques which can apply to our selected QC-LDPC code are proposed, including a four block-parallel layered decoding technique and fixed wire network. Two-stage pipelining and four block-parallel layered decoding techniques are used to improve the clock speed and decoding throughput. Also, the fixed wire network is proposed to simplify the switch network. A 672-bit, rate-1/2 QC-LDPC decoder architecture has been designed and implemented using 90-nm CMOS standard cell technology. Synthesis results show that the proposed QC-LDPC decoder requires a 794K gate and can operate at 290 MHz to achieve a data throughput of 3.9 Gbps with a maximum of 12 iterations, which meet the requirement of 60 GHz WPAN applications.