• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.16-21
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• 1994

A 3-terminal pin-type photosensor with gate contrail is fabricated using standard silicon CMOS IC process. The photosensor of a $100{\mu}m{\times}120{\mu}m$ size has dark current less than 1nA and its breakdown voltage is -14V with a depletion capacitance 0.75 pF at -5V reverse bias. Responsivity at 0V gate voltage is 0.25A/W at $0.633{\mu}m$ wavelength, 0.19A/W at $0.805{\mu}m$. Responsivity increases with increasing gate voltage. The integrated circuit of photosensor and CMOS inverter shows $22K{\Omega}$ transimpedance and photocurrent of $90{\mu}A$ switchs the output state of digital inverter without additional amplifier.

• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1789-1796
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• 2012

In this paper, a new high-efficiency CMOS bridge rectifier for driving RFID tag chips is designed and analyzed. The input stage of the proposed rectifier is designed as a cascade structure connected with two NMOSs for reducing the gate capacitance by circuitry method, which is the main path of the leakage current that is increased when the operating frequency is increased. This gate capacitance reduction technique using the cascade input stage for reducing the gate leakage current is presented theoretically. The output characteristics of the proposed rectifier are derived analytically using its high frequency small-signal equivalent circuit. For the general load resistance of $50K{\Omega}$, the proposed rectifier shows better power conversion efficiencies of 28.9% for 915MHz UHF (for ISO 18000 -6) and 15.3% for 2.45GHz microwave (for ISO 18000-4) than those of 26.3% and 26.8% for 915MHz, and 13.2% and 12.6% for 2.45GHz of compared other two existing rectifiers. Therefore, the proposed rectifier may be used as a general purpose rectifier to drive tag chips for various RFID systems.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.41-46
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• 2007

A novel post-linearization technique is proposed for CMOS cascode low noise amplifier (LNA). The technique uses dual common gate FETs one of which delivers the linear currents to a load and the other one sinks the $3^{rd}$ order intermodulation currents of output currents from the common source FET. Selective current branching can be implemented in $0.18{\mu}m$ CMOS process by using a thick oxide FET as an IM3 sinker with a normal FET as a linear current buffer. A differential LNA adopting this technique is designed at 2.14GHz. The measurement results show 11dBm IIP3, 15.5dB power gain and 2.85dB noise figure consuming 12.4mA from 1.8V power supply. Compared with the LNA with turning off the IM3 sinker, the proposed technique improves the IIP3 by 7.5 dB.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.226-235
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• 1999

To investigate SPICE noise model and the behavior of its parameters, 1/f noise of NMOS devices fabricated by BiCMOS process is measured and compared to the various noise models and measured results. For the long channel devices, bias dependence of the drain current noise power spectral density $S_{Id}$ of NMOS is similar to the previous results. Equivalent gate noise power spectral density $S_{Vg}$ shows weak dependence on the gate and drain voltages in long channel NMOS as the previous results. However, it is shown that most of published noise models are difficult to apply to short channel devices. Therefore, in this study, with comparison of our experimental results, we have tried to find the model of 1/f noise, appropriate for our NMOS device fabricated by BiCMOS process.

• Journal of KIISE:Computer Systems and Theory
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• v.28 no.8
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• pp.406-413
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• 2001

본 논문은 CMOS 디지털 회로에서 글리치(glitch)에 의해 발생하는 전력소모를 줄이기 위한 효율적인 휴리스틱 알고리즘을 제시한다. 제안된 알고리즘은 사이징되는 게이트의 위치와 양에 따라 게이트 사이징을 세 가지 type으로 분류한다. 또한 버퍼삽입은 삽입되는 버퍼의 위치에 따라서 두 가지 type으로 분류한다. 글리치 제거 효과를 극대화하기 위해서 비용과 이득의 상관관계를 고려하여 하나의 최적화 과정 안에서 세 가지 type의 게이트 사이징과 두 가지 type의 버퍼삽입을 혼합한다. 제안된 알고리즘은 0.5$\mu\textrm{m}$ 표준 셀 라이브러리(standard cell library)를 이용한 LGSynth91 벤치마크 회로에 대한 테스트 결과 효율성을 검증하였다. 실험결과는 평균적으로 69.98%의 글리치 감소와 28.69%의 전력감소를 얻을 수 있었으며 이것은 독립적으로 적용된 게이트 사이징과 버퍼 삽입 알고리즘에 의한 것 보다 좋은 결과이다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.401-417
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• 1994

In this paper, a new testable design technique for domino CMOS circuits is proposed to detect stuck-at(s-at), stuck-open(s-op) and stuck-on(s-on) faults in the circuits by observing logic test reponses. The proposed technique adds one pMOS transistor per domino CMOS gate for s-op and s-on faults testing of nMOS transistors and one nMOS transistors and one nMOS transistor per domino gate or multilevel circuit to detect s-on faults in pMOS transistors of inverters in the circuit. The extra transistors enable the proposed testable circuit to operate like a pseudo static nMOS circuit while testing nMOS transistors in domino CMOS circuits. Therefore, the two=phase operation of a precharge phase and a evaluation phase is not needed to keep the domino CMOS circuit from malfunctionong due to circuit delays in the test mode, which reduces the testing time and the complexity of test generation. Most faults of th transistors in the proposed testable domino CMOS circuit can be detected by single test patterns. The use of single test patterns makes the testing of the proposed testable domino CMOS circuit free from path delays, timing skews, chage sharing and glitches. In the proposed design, the testing of the faults which, require test sequences also becomes free from test invalidation. The conventional automatic test pattern generators(ATPG) can be used for generating test patterns to detect faults in the circuits.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.116-126
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• 1994

In this paper, the switch-level fault simulator for CMOS circuits with a gate-to-drain/source short fault is implemented. A fault model used in this paper is based on the graphical analysis of the electrical characteristics of the faulty MOS devices and the conversion of the faulty CMOS circuit to the equivalent faulty CMOS inverter in order to find its effect on the successive stage. This technique is very simple and has the increased accuracy of the simulation. The simulation result of the faulty circuit using the implemented fault simulator is compared with the result of the SPICE simulation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.514-516
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• 2007

본 연구에서는 Sentaurus를 이용하여 FinFET를 구현 하고자 한다. 소자의 성능 향상과 누설 전류의 최소화를 지속하기 위해, 반도체 제조자들은 10nm 이하의 소자에 적용될수 있는 새로운 트랜지스터 구조를 연구 하기 시작했다. 가능성 있는 것 중의 하나인 FinFET가 몇년 전 California-Berkeley 대학에서 발표했는데, 상어 등지느러미 같이 생긴 높고 얇은 채널 모양을 이용하는 소자이다. 이러한 설계에서는 지느러미의 한면에 하나씩 두 개의 게이트가 사용되어 소자의 전환을 쉽게 해준다. FinFET는 이러한 구조 때문에 이중 게이트 MOSFET이 라고 불린다. CMOS소자는 수평 적으로 구성되지만, FinFET는 수직으로 구성되기 때문에 이러한 접근은 혁신적이다. 하지만 다른 이중게이트 구조와 달리, FinFET는 표준 CMOS공정에서 크게 벗어나지 않는다. 본 연구에서는 Sentaurus 시뮬레이션 프로그램을 이용하여 FinFET를 구현하고자 한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.1-8
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• 2000

In this paper, the dependence of interconnect line-induced delay time on the size of CMOSFET gate width is characterized. In case of capacitance dominant interconnect line, the total delay time decreases as transistor size increases. However, there exists a transistor size for minimum total delay time when both of resistance and capacitance of interconnect line become larger than those of transistor. The optimum transistor size for minimum total delay time is obtained using an analytic equation and the experimental results showed good agreement with the calculation.