• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.11 no.6
• /
• pp.77-87
• /
• 2001

This paper describes a design of cryptographic processor that implements the Rijndael cipher algorithm, the Advanced Encryption Standard algorithm. It can execute both encryption and decryption, and supports only 128-bit block and 128-bit keys. As the processor is implemented only one round, it must iterate 11 times to perform an encryption/decryption. We implemented the ByteSub and InvByteSub transformation using the algorithm for minimizing the increase of area which is caused by different encryption and decryption. It could reduce the memory size by half than implementing, with only ROM. We estimate that the cryptographic processor consists of about 15,000 gates, 32K-bit ROM and 1408-bit RAM, and has a throughput of 1.28 Gbps at 110 MHz clock based on Samsung 0.5um CMOS standard cell library. To our knowledge, this offers more reduced memory size compared to previously reported implementations with the same performance.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.12 no.5
• /
• pp.15-25
• /
• 2002

In this paper a design of high performance cryptographic processor which implements AES Rijndael algorithm is described. To eliminate performance degradation due to round-key computation delay of conventional processor, the on-the-fly precomputation of round key based on modified round structure is adopted. And on-the-fly round key generator which supports 128, 192, and 256-bit key has modular structure. The designed processor has iterative structure which uses 1 clock cycle per round and supports three operation modes, such as ECB, CBC, and CTR mode which is a candidate for new AES modes of operation. The cryptographic processor designed in Verilog-HDL and synthesized using 0.251$\mu\textrm{m}$ CMOS cell library consists of about 51,000 gates. Simulation results show that the critical path delay is about 7.5ns and it can operate up to 125Mhz clock frequency at 2.5V supply. Its peak performance is about 1.45Gbps encryption or decryption rate under 128-bit key ECB mode.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.13 no.4
• /
• pp.139-149
• /
• 2003

In this paper a hardware design of area-efficient hash processor which implements MD5 algorithm using hardware sharing and carry-save addition schemes is described. To reduce area, the processor adopts hardware sharing scheme in which 1 step operation is divided into 2 substeps and then each substep is executed using the same hardware. Also to increase clock frequency, three serial additions of substep operation are transformed into two carry-save additions and one carry propagation addition. The MD5 hash processor is designed using 0.25 $\mu\textrm{m}$CMOS technology and consists of about 13,000 gates. From timing simulation results, the designed MD5 hash processor has 465 Mbps hash rates for 512-bit input message data under 120 MHz operating frequency.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.23 no.12
• /
• pp.1609-1617
• /
• 2019

Described in this paper is a design of hardware accelerator for implementing public-key cryptographic protocols (PKCPs) based on Elliptic Curve Cryptography (ECC) and RSA. It supports five elliptic curves (ECs) over GF(p) and three key lengths of RSA that are defined by NIST standard. It was designed to support four point operations over ECs and six modular arithmetic operations, making it suitable for hardware implementation of ECC- and RSA-based PKCPs. In order to achieve small-area implementation, a finite field arithmetic circuit was designed with 32-bit data-path, and it adopted word-based Montgomery multiplication algorithm, the Jacobian coordinate system for EC point operations, and the Fermat's little theorem for modular multiplicative inverse. The hardware operation was verified with FPGA device by implementing EC-DH key exchange protocol and RSA operations. It occupied 20,800 gate equivalents and 28 kbits of RAM at 50 MHz clock frequency with 180-nm CMOS cell library, and 1,503 slices and 2 BRAMs in Virtex-5 FPGA device.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.25 no.3
• /
• pp.419-426
• /
• 2021

A high-performance elliptic curve cryptography processor (HP-ECCP) was designed to support five field sizes of 192, 224, 256, 384 and 521 bits over GF(p) defined in NIST FIPS 186-2, and it provides eight modes of arithmetic operations including ECPSM, ECPA, ECPD, MA, MS, MM, MI and MD. In order to make the HP-ECCP resistant to side-channel attacks, a modified left-to-right binary algorithm was used, in which point addition and point doubling operations are uniformly performed regardless of the Hamming weight of private key used for ECPSM. In addition, Karatsuba-Ofman multiplication algorithm (KOMA), Lazy reduction and Nikhilam division algorithms were adopted for designing high-performance modular multiplier that is the core arithmetic block for elliptic curve point operations. The HP-ECCP synthesized using a 180-nm CMOS cell library occupied 620,846 gate equivalents with a clock frequency of 67 MHz, and it was evaluated that an ECPSM with a field size of 256 bits can be computed 2,200 times per second.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.3
• /
• pp.75-85
• /
• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1055-1063
• /
• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.2
• /
• pp.71-80
• /
• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.12
• /
• pp.3235-3245
• /
• 1996

A DDFS(Direct Digital Frequency Synthesizer) used in spread spectrum communication systems must need fast switching speed, high resolution(the step size of the synthesizer), small size and low power. The chip has been designed with four parallel sine look-up table to achieve four times throughput of a single DDFS. To achieve a high processing speed DDFS chip, a 24-bit pipelined CMOS technique has been applied to the phase accumulator design. To reduce the size of the ROM, each sine ROM of the DDFS is stored 0-.pi./2 sine wave data by taking advantage of the fact that only one quadrant of the sine needs to be stored, since the sine the sine has symmetric property. And the 8 bit of phase accumulator's output are used as ROM addresses, and the 2 MSBs control the quadrants to synthesis the sine wave. To compensate the spectrum purity ty phase truncation, the DDFS use a noise shaper that structure like a phase accumlator. The system input clock is divided clock, 1/2*clock, and 1/4*clock. and the system use a low frequency(1/4*clock) except MUX block, so reduce the power consumption. A 107MHz DDFS(Direct Digital Frequency Synthesizer) implemented using 0.8.mu.m CMOS gate array technologies is presented. The synthesizer covers a bandwidth from DC to 26.5MHz in steps of 1.48Hz with a switching speed of 0.5.mu.s and a turing latency of 55 clock cycles. The DDFS synthesizes 10 bit sine waveforms with a spectral purity of -65dBc. Power consumption is 276.5mW at 40MHz and 5V.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.22 no.1
• /
• pp.91-99
• /
• 2018

This paper has proposed a low-noise and high-linear RF receiver supporting TV white space from 470 MHz to 698 MHz), which is implemented in $0.13-{\mu}m$ CMOS technology. It consists of a low-noise amplifier, a RF band-pass filter, a RF amplifier, a passive down-conversion mixer, and a channel-selection low-pass filter. A low-noise amplifier and RF amplifier provide a high voltage gain to improve the sensitivity level. To suppress strong and nearby interferers, two RF filtering schemes have been performed by using a RF BPF and a down-conversion mixer. The proposed LPF has been based on the common-gate topology and adopted a bi-quad cell to achieve -24dB/oct characteristics. In addition, the RF receiver can support the overall TV band by controlling a LO frequency. The simulated results show a voltage gain of 56 dB, a noise figure of less than 2 dB, and an out-of-channel IIP3 of -2.3 dBm. It consumes 37 mA from a 1.5 V supply voltage.