Browse > Article
http://dx.doi.org/10.5515/KJKIEES.2013.24.11.1055

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback  

Jeonng, Nam Hwi (School of Electronics, Telecommunication and Computer Engineering, Korea Aerospace University)
Cho, Choon Sik (School of Electronics, Telecommunication and Computer Engineering, Korea Aerospace University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.24, no.11, 2013 , pp. 1055-1063 More about this Journal
Abstract
Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.
Keywords
Low Noise Amplifier; Wideband; Inductive Shunt Feedback; High Linearity; RF CMOS;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. Meaamar, B. C. Chye, D. M. Anh, and Y. K. Seng, "A 3-8 GHz low-noise CMOS amplifier", IEEE Microwave and Wireless Components Letters, vol. 19, no. 4, pp. 245-247, Apr. 2009.   DOI   ScienceOn
2 S. K. Hampel, O. Schmitz, M. Tiebout, and I. Rolfes, "Inductorless 1-10.5 GHz Wideband LNA for multistandard applications", IEEE Asian Solid-State Circuits Conference, pp. 269-272, 2009.
3 H. -K. Chen, Y. -S. Lin, and S. -S. Lu, "Analysis and design of a 1.6-28-GHz compact wideband LNA in 90-nm CMOS using a $\pi$-match input network", IEEE Trans. Microwave Theory and Tech., vol. 58, no. 8, pp. 2092-2104, Aug. 2010.   DOI   ScienceOn
4 P. -Y. Chang, S. S. H. Hsu, "A compact 0.1-14-GHz ultra-wideband low-noise amplifier in 0.13- ${\mu}m$ CMOS", IEEE Trans. Microwave Theory and Tech., vol. 58, no. 10, pp. 2575-2581, Oct. 2010.   DOI   ScienceOn
5 C. -T. Fu, C. -N. Kuo, and S. S. Taylor, "Lownoise amplifier design with dual reactive feedback for broadband simultaneous noise and impedance matching", IEEE Trans. Microwave Theory and Tech., vol. 58, no. 4, pp. 795-806, Apr. 2010.   DOI   ScienceOn
6 M. Okushima J. Borremans, D. Linten, and G. Groeseneken, "A DC-to-22 GHz 8.4 mW compact dual-feedback wideband LNA in 90 nm digital CMOS", IEEE RFIC Symp., pp. 295-298, 2009.
7 J. Borremans, P. Wambacq, C. Soens, Y. Rolain, and M. Kuijk, "Low-area active-feedback low-noise amplifier design in scaled digital CMOS", IEEE J. Solid-State Circuits, vol. 43, no. 11, pp. 2422-2432, Nov. 2008.   DOI   ScienceOn
8 D. C. Howard, J. Poh, T. S. Mukerjee, and J. D. Cressler, "A 3-20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications", IEEE Int. Midwest Symp. on Circuits and Systems, pp. 445-448, 2010.
9 A. I. A. Galal, R. K. Pokharel, H. Kanay, and K. Yoshida, "Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18 m CMOS process", Silicon Monolithic Integrated Circuits in RF Systems, pp. 33-36, 2010.
10 Q. Li, Y. P. Zhang, "A 1.5-V 2-9.6-GHz inductorless low-noise amplifier in 0.13 ${\mu}m$ CMOS", IEEE Trans. Microwave Theory and Tech., vol. 55, no. 10, pp. 2015-2023, Oct. 2007.   DOI   ScienceOn
11 D. C. Howard, X. Li, and J. D. Cressler, "A low power 1.8-2.6 dB noise figure, SiGe HBT wideband LNA for multiband wireless applications", IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 55-58, 2009.
12 S. -F. Chao, J. -J. Kuo, C. L. Lin, M. -D. Tsai, and H. Wang, "A DC-11.5 GHz low-power, wideband amplifier using splitting-load inductive peaking technique", IEEE Microwave and Wireless Components Letters, vol. 18, no. 7, pp. 482-484, Jul. 2008.   DOI   ScienceOn
13 Z. -Y. Huang, C. -C. Huang, C. -C. Chen, C. -C. Hung, and C. -M. Chen, "An inductor-coupling resonated CMOS low noise amplifier for 3.1-10.6 GHz ultra-wideband system", IEEE Int. Sym. Circuits and Systems, pp. 221-224, 2009.
14 Y. -J. Lin, S. S. H. Hsu, J. -D. Jin, and C. Y. Chan, "A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique", IEEE Microwave and Wireless Components Letters, vol. 17, no. 3. pp. 232-234, Mar. 2007.
15 H. Zhang, X. Fan, and E. S´anchez. Sinencio, "A low-power, linearized, ultra-wideband LNA design technique", IEEE J. Solid-State Circuits, vol. 44, no. 2, pp. 320-330, Feb. 2009.   DOI   ScienceOn
16 H. Zhang, E. S´anchez-Sinencio, "Linearization techniques for CMOS low noise amplifiers: A tutorial", IEEE Trans. Circuits and Systems I, vol. 58, no. 1, pp. 22-36, Jan. 2011.   DOI   ScienceOn