• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.1-5
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• 2010

In this paper, we directly compare the program efficiency of conventional channel hot electron (CHE) injection methods and a novel hot electron injection methods using substrate forward biases in our silicon-oxide-nitride-oxide-silicon (SONOS) cell. Compared with conventional CHE injection methods, the proposed injection method showed improved program efficiency including faster program operation at lower bias voltages as well as localized trapping features for multi-bit operation with a threshold voltage difference of 1 V at between the forward and reverse read. This program method is expected to be useful and widely applied for future nano-scale multi-bit SONOS memories.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Journal of Ginseng Research
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• v.17 no.1
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• pp.29-34
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• 1993

This study was undertaken to investigate the effect of red ginseng extract (5.5 mg/mouse ip) on the activities of superoxide dismutase (SOD), peroxidase and catalase in the liver of the gamma ray irradiated male mice. The experimental groups consisted of control, red ginseng extract injection group, irradiation (8 $Gy^{60}$Co) group and red ginseng extract injection after irradiation group. in red ginseng extract injection group, SOD, peroxidase and catalase activities were similar to that in the control group. In irradiation group SOD, peroxidase and catalase activities increased progressively until the 2nd day after the treatment and then decreased thereafter, whereas red ginseng extract injection after irradiation group recovered more rapidly than irradiation group. The above results suggested that red ginseng extract injection after irradiation group have the recovery effects on the activities of SOD, peroxidase and catalase after radiation injury in the liver of male mice.

• Journal of the Korea Institute of Building Construction
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• v.6 no.2 s.20
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• pp.91-98
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• 2006

The purpose of this study is to investigate the problem of crack repair materials and methods in existing concrete structure and to propose the effective injection method on crack repair by packer type. The result of this study is as follows. It is investigated that the crack width in the inner matrix of concrete structure is decreased about 30-40% than that in the sulfate of the concrete structure. Also it is showed that the possibility which could be monolithic with injection part became higher if the injection part if installed near to surface of concrete on the punching method to vertical direction against crack area. The injection of repair material can be poured smoothly under about $10N/mm^2$ pressure on the condition that cracks are monolithic with injection part without dust by drill. The effective method to pour the injection repair material is the punching method by coredrill but several research to minimize injection pressure should be continually.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.989-992
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• 2004

A new method is proposed to fabricate a reusable qualtz master with order of 100 nm dot pattern on its surface. Some fabrication conditions such as dose are investigated to find optimal condition. This reusable qualtz master is used directly as a stamper to injection mold the dot patterns. Polycarbonate and Polyoxymethylene are used as molding materials and the effect of the mold temperature is also investigated to see the moldabilty of the injection molding for very fine dot features.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.57-64
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• 2003

The characteristics of fuel spray have an important effect on engine performance such as power, specific fuel consumption and emission because fuel spray controls the mixing and combustion process in an engine. Therefore, if the characteristics of fuel spray can be measured, they can be effectively used for improving engine performance. The major factors controlling fuel spray are injection pressure, ambient pressure and engine speed. In this study, the experiment is performed in a high temperature and high pressure chamber. In experiments, spray tip penetration, spray angle and spray tip velocity are measured at various injection pressure (10 and 14 MPa), ambient pressure(3,4 and 5 MPa), fuel pump speed(500, 700 and 900 rpm). Experimental results are useful for deriving an experimental spray equation and design an optimal engine. The results showed that injection pressure, ambient pressure and fuel pump speed are important factors influencing on the characteristics of spray. 1) Injection pressure influences on the characteristics of spray. That is, as injection pressure is increased, spray angle is decreased but spray penetration and spray tip velocity is increased. 2) Spray angle and spray penetration are increased as fuel pump speed is increased.

• Journal of Power Electronics
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• v.19 no.4
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• pp.968-979
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• 2019

Recently, there has been increased interest in the study of multiphase machines due to their higher fault-tolerant capability when compared to their conventional three-phase counterparts. For six-phase machines, stator windings configured with a single isolated neutral (1N) provide significantly more post-fault torque/power than two isolated neutrals (2N). Hence, this configuration is preferred in applications where post-fault performance is critical. It is well known that min-max injection has been commonly used for three-phase and multiphase machines in healthy condition to maximize the modulation limit. However, there is a lack of discussion on min-max injection for post-fault condition. Furthermore, the effects in terms of the common-mode voltage (CMV) in modulating signals has not been discussed. This paper investigates the effect of min-max injection in post fault-tolerant control on the voltage and speed limit of a symmetrical six-phase induction machine with single isolated neutral. It is shown that the min-max injection can minimize the amplitude of reference voltage, which maximizes the modulation index and post-fault speed of the machine. This in turn results in a higher post-fault power.