• 전기전자학회논문지
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• 제23권1호
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• pp.35-43
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• 2019

본 논문은 10비트 비동기 SAR ADC에 사용되는 CDAC의 선형성을 개선하기 위한 커패시터 자체 보정 기법을 제안한다. 제안된 커패시터 자체 보정 기법은 10비트 CDAC의 상위 5비트의 각각의 커패시터의 값이 하위 커패시터의 값들의 합과 같아지도록 수행된다. Behavioral 시뮬레이션의 결과에 의하면, CDAC의 커패시터의 최대 부정합 오류가 4%일 때, 제안한 커패시터 자체 보정 기법은 DNL과 INL를 각각 -0.810/+0.194LSB와 -0.832/+0.832LSB에서 -0.235/+0.178LSB와 -0.227/ +0.227LSB로 개선시킨다. 1.2V 공급전압과 110nm CMOS 공정을 이용하여 제작된 10비트 비동기 SAR ADC의 면적과 전력소모는 각각 $0.205mm^2$와 1.25mW이다. 20MS/s의 샘플율과 96.13kHz 입력 주파수에 대해 제안한 10비트 비동기 SAR ADC의 측정된 ENOB는 9.194비트이다.

• IEIE Transactions on Smart Processing and Computing
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• 제4권3호
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• pp.183-188
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• 2015

A 10-bit 10MS/s low power consumption successive approximation register (SAR) analog-to-digital converter (ADC) using a straightforward capacitive digital-to-analog converter (DAC) is presented in this paper. In the proposed capacitive DAC, switching is always straightforward, and its value is half of the peak-to-peak voltage in each step. Also the most significant bit (MSB) is decided without any switching power consumption. The application of the straightforward switching causes lower power consumption in the structure. The input is sampled at the bottom plate of the capacitor digital-to-analog converter (CDAC) as it provides better linearity and a higher effective number of bits. The comparator applies adaptive power control, which reduces the overall power consumption. The differential prototype SAR ADC was implemented with $0.18{\mu}m$ complementary metal-oxide semiconductor (CMOS) technology and achieves an effective number of bits (ENOB) of 9.49 at a sampling frequency of 10MS/s. The structure consumes 0.522mW from a 1.8V supply. Signal to noise-plus-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 59.5 dB and 67.1 dB and the figure of merit (FOM) is 95 fJ/conversion-step.

• 한국정보전자통신기술학회논문지
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• 제16권6호
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• pp.454-464
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• 2023

본 논문은 센서 노드 응용을 위한 1MS/s의 샘플링 속도를 가지는 저전력 8비트 비동기 축차근사형(successive approximation register, SAR) 아날로그-디지털 변환기(analog-to-digital converter, ADC)를 제안한다. 이 ADC는 선형성을 개선하기 위해 부트스트랩 스위치를 사용하며, 공통모드 전압(Common-mode voltage, VCM) 기반의 커패시터 디지털-아날로그 변환기 (capacitor digital-to-analog converter, CDAC) 스위칭 기법을 적용하여 DAC의 전력 소모와 면적을 줄인다. 외부 클럭에 동기화해서 동작하는 기존 동기 방식의 SAR ADC는 샘플링 속도보다 빠른 클럭의 사용으로 인해 전력 소비가 커지는 단점을 가지며 이는 내부 비교를 비동기 방식으로 처리하는 비동기 SAR ADC 구조를 사용하여 해결할 수 있다. 또한, 낮은 해상도의 설계에서 발생하는 큰 디지털 전력 소모를 줄이기 위해 동적 논리 회로를 사용하여 SAR 로직를 설계하였다. 제안된 회로는 180nm CMOS 공정으로 시뮬레이션을 수행하였으며, 1.8V 전원전압과 1MS/s의 샘플링 속도에서 46.06𝜇W의 전력을 소비하고, 49.76dB의 신호 대 잡음 및 왜곡 비율(signal-to-noise and distortion ratio, SNDR)과 7.9738bit의 유효 비트 수(effective number of bits, ENOB)를 달성하였으며 183.2fJ/conv-step의 성능 지수(figure-of-merit, FoM)를 얻었다. 시뮬레이션으로 측정된 차동 비선형성(differential non-linearity, DNL)과 적분 비선형성(integral non-linearity, INL)은 각각 +0.186/-0.157 LSB와 +0.111/-0.169 LSB이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.760-770
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• 2016

A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

• 한국정보통신학회논문지
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• 제20권12호
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• pp.2317-2325
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• 2016

본 논문은 reference driver를 이용한 10비트 10MS/s 축차근사형(SAR: Successive Approximation Register) 아날로그-디지털 변환기(ADC: Analog-to-Digital Converter)를 제안한다. 제안하는 SAR ADC는 커패시터형 디지털-아날로그 변환기(CDAC: Capacitive Digital-to-Analog Converter), 비교기, SAR 로직, 그리고 공급 전압 노이즈에 대한 내성을 향상시키는 reference driver로 구성된다. ${\pm}0.9V$의 아날로그 입력전압을 가지는 SAR ADC를 위해 reference driver는 0.45V, 1.35V의 기준 전압을 생성한다. 설계된 SAR ADC는 $0.18{\mu}m$ CMOS 공정을 이용하여 제작되었으며 1.8V의 공급전압을 사용하였다. 제안된 SAR ADC는 reference driver를 이용하여 +/- 200mV의 공급 전압 변화에서도 ${\pm}0.9V$의 입력 범위를 유지한다. 10MS/s의 샘플링 주파수에서 5.32mW의 전력을 소모한다. 측정된 ENOB는 9.11 비트 이며, DNL과 INL은 각각 +0.60/-0.74 LSB와 +0.69/-0.65 LSB이다.

• 한국동물위생학회지
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• 제18권1호
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• pp.1-21
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• 1995

To elucidate pathogenesis of bovine leukemia virus(BLV) in Korean native goats, the goats experimentally infected with BLV were studied especially for the aspects of infectivity and hematological changes. The experimental goats were examined for 27 months by agar-gel immunodiffusion(AGID) test and syncytium formation assay. During this period, changes of total leucocyte, absolute Iymphocyte and atypical Iymphocyte were examined, and the distribution of surface immunoglobulin ( sIg ) -bearing cells and rosette forming cell (RFC) in the peripheral Iymphocyte were also investigated. By indirect immunofluorescence (IFA) and complement dependent antibody cytotoxicity (CDAC) assay using monoclonal antibody(Mab) against bovine leukosis tumor-associated anti-gen(BL-TAA), changes of BL-TAA positive Iymphocyte in peripheral blood were measured. The results obtained through the experiment were summarized as follows. 1. Antibody titers were measured by AGID using gP51 and P24 antigens. The animals were serologically converted at 2 months post-inoculation(pi) in gP51 antigen, whereas sero-converted at 4 months pi in P24 antigen. In comparison with antibody titers for gP51, P24 antigen showed lower titers throughout the trial period. 2. The peripheral lymphocytes from all of the infected goats, as co-cultivated with F8l cells manifested syncytial formation at 4 months pi. 3. On counting total leucocyte, Iymphocyte and atypical Iymphocyte, two out of four infected goats showed normal distribution, while No 2 of the remaining two revealed temporal and No 3, Persistant increasing number of the cells. 4. The optimal condition of rosette formation of the peripheral Iymphocyte of normal Korean native goats was shown in the sheep erythrocyte treated with 0.1M AET for 30 nun at $37^{\circ}C$. When the Iymphocytes were treated in nylon wool column, the number of sIg-bear-ing cell were increased in the nylon wool adherent cells, but RFC was increased in the non-adherent cells. Of the infected goats, No 2 and No 3 showed significantly increasing number of sIg-bearing cells at 18 months pi. 5. The Iymphocytes of No 2 and No 3 goats reacted positively in IFA using Mab against BL-TAA at 12 months pi and 18 months pi, respectively. In CDAC test, all of four infected goats revealed positive reaction at 24 months pi. The higher positive rates were observed in No 2 and No 3 as compared with the remainders.

• IEIE Transactions on Smart Processing and Computing
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• 제4권3호
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• pp.189-193
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• 2015

This paper provides the design techniques of a successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for distributed maximum power point tracking (DMPPT) control in a photovoltaic system. Both a top-plate sampling technique and a $V_{CM}$-based switching technique are applied to the 12b capacitor digital-to-analog converter (CDAC). With these techniques, we can implement a 12b SAR ADC with a 10b capacitor array digital-to-analog converter (DAC). To enhance the accuracy of the ADC, a single-to-differential converted DAC is exploited with the dual sampling technique during top-plate sampling. Simulation results show that the proposed ADC can achieve a signal-to-noise plus distortion ratio (SNDR) of 70.8dB, a spurious free dynamic range (SFDR) of 83.3dB and an effective number of bits (ENOB) of 11.5b with bipolar CMOS LDMOD (BCDMOS) $0.35{\mu}m$ technology. Total power consumption is 115uW under a supply voltage of 3.3V at a sampling frequency of 1.25MHz. And the figure of merit (FoM) is 32.68fJ/conversion-step.