• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.653-657
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• 2015

A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.1-4
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• 1988

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

• 전기화학회지
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• 제24권4호
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• pp.113-119
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• 2021

본 연구에서는 유기환원제로 포름산과 촉매로 PtD/C를 사용하여 불순물이 없는 고품질 V^3.5+ 전해질을 생산하였고 이를 VRFB에 적용하였다. PtD/C 촉매의 잘 배향된 3D 수상 돌기 구조는 포름산 산화 반응과 바나듐 환원 반응에 높은 활성을 보여 주었다. 그 결과 PtD/C의 촉매 전환율은 2.73 mol g^-1 h^-1로 polyol방법을 제조된 Pt/C의 전환율 1.67 mol g^-1 h^-1보다 더 높았다. 또한 VRFB 충방전 실험에서 촉매 반응으로 생성된 V^3.5+ 전해질은 전해 방법으로 제조 된 표준V^3.5+전해질과 동일한 성능을 보여 줌으로서 VRFB의 전해질로 사용 가능함을 증명하였다.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• 센서학회지
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• 제4권3호
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• pp.15-21
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• 1995

본 논문은 졸겔법에 의해 $TiO_{2}-V_{2}O_{5}$ 습도센서를 제조하고, 미세구조 및 결정구조를 분석하여 습도감지특성이 뛰어난 최적 제조조건을 찾았다. 그레인 크기는 $Ti^{4+}$ 사이트에 치환되는 $V^{5+}$비에 비례하여 증가하였다. X-선 회절분석 결과, $V_{2}O_{5}$비에 관계없이 $V^{5+}$피크는 확인할 수 없었다. 실험결과로부터 $V_{2}O_{5}$비가 1mol%, 열처리온도가 $700^{\circ}C$일때 가장 우수한 습도감지특성을 나타내었다. 시편의 정전용량은 주파수가 증가할수록 감소하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1987년도 한국자동제어학술회의논문집; 한국과학기술대학, 충남; 16-17 Oct. 1987
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• pp.218-222
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• 1987

The continuously variable transmission (C.V.T.) has been introduced for many years, however, the application of C.V.T. system has been used rather restrictively because of the problems such as reliability, durability, efficiency and, controllability. In this paper, some of the research trends about the control algorithms and the system design method involving C.V.T. is introduced. An engine is assumed in operation along the ideal operating line and it is also considered to be controlled independently to the C.V.T. system. The control simulation has been carried out to confirm it and also the operation performance of the system is investigated.

• 한국화재소방학회논문지
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• 제18권3호
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• pp.45-50
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• 2004

600V용 비닐절연전선의 절연체로 사용되는 PVC의 열적 열화 특성을 열중량분석과 가속열화시험을 이용하여 연구하였다. TGA를 이용한 활성화에너지는 Kissinger method와 Flynn-Wall-Ozawa method를 이용하여 측정하였다. 활성화에너지를 계산한 결과 600V용 PVC 절연전선은 89.29 kJ/mol～111.39 kJ/mol, 내열 PVC절연전선은 97.80 kJ/mol～119.25 kJ/mol로 나타났다. 또한, 저온인 80, 90, 10$0^{\circ}C$에서 장기가속열화를 통한 활성화에너지를 아레니우스 방정식을 이용하여 계산하였다. 그 결과 PVC 절연전선은 92.16 kJ/mol,내열 PVC절연전선은 97.52kJ/mol로 나타났다. 연구결과에 있어 600V내열 PVC절연 전선이 PVC 절연전선에 비해 활성화에너지가 큼을 알 수 있었으며, 사용 수명을 예측함에 있어서도 장기적으로 안정함을 예측할 수 있다.

• 한국농공학회:학술대회논문집
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• 한국농공학회 1998년도 학술발표회 발표논문집
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• pp.376-381
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• 1998

The large scaled field test by prefabricated vertical drains was performed to evaluate the superiority of vertical discharge capacity for drain materials through compare and analyze the time-settlement behavior with drain spacing and the compression index and consolidation coefficient obtained by laboratory experiments and field monitoring system 1. The relation of measurement settlement( $S_{m}$) versus design settlement( $S_{t}$) and measurement consolidation ratio( $U_{m}$) versus design consolidation ratio( $U_{t}$) were shown $S_{m}$=(1.0~l.1) $S_{t}$, $U_{m}$=(1.13~l.17) $U_{t}$, at 1.0m drain spacing and $S_{m}$=(0.7~0.8) $S_{t}$, $U_{m}$=(0.92~0.99) $U_{t}$ at 1.5m drain spacing, respectively. 2. The relation of field compression index( $C_{cfield}$) and virgin compression index( $V_{cclab}$) was shown $C_{cfield}$=(1.0~1.2) $V_{cclab}$, But it was nearly same value when considered the error with determination method of virgin compression index and prediction method of total settlement. 3. field consolidation coefficient was larger than laboratory consolidation coefficient, and the consolidation coefficient ratio( $C_{h}$/ $C_{v}$) were $C_{h}$=(2.4 ~ 3.0) $C_{v}$. $C_{h}$=(3.5 ~ 4.3) $C_{v}$ at 1.0m and 1.5m drain spacing and increased with increasing of drain spacingngasing of drain spacingng spacingng

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.