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http://dx.doi.org/10.5573/JSTS.2015.15.6.653

Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs  

Lee, Sangjun (Department of Electronic Engineering, Hankuk University of Foreign Studies)
Lee, Seonghearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.15, no.6, 2015 , pp. 653-657 More about this Journal
Abstract
A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.
Keywords
MOSFET; CMOS; parameter extraction; effective channel length; parasitic capacitance; modeling; RF C-V; S-parameter;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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