• 한국진공학회지
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• 제16권2호
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• pp.122-127
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• 2007

본 연구에서는 비정질 탄소박막들(a-C, a-C:H, a-C:N)을 흑연타겟이 부착되어진 비대칭 마그네트론 스퍼터링법을 이용하여 증착하였으며, 음의 DC 바이어스 전압의 효과를 알아보기 위해 증착가스 압력내에서 200 V를 인가하여 탄소박막들을 제작하였다. 수소화된 비정질 탄소박막과 질화탄소박막은 각각 스퍼터링 가스로써 아세틸렌과 질소를 주입하여 제작하였다. 결과적으로 26.5 GPa의 높은경도와 0.1 nm의 낮은 거칠기 그리고 접착력은 30.5 N를 가지는 수소화된 비정질 탄소박막을 합성하였으며, 32 N의 좋은 접착 특성을 나타내는 질화 탄소 박막을 합성하였다. 본 논문에서는 아세틸렌과 질소 가스의 효과와 음의 DC 바이어스 전압에 따른 비정질 탄소박막들의 구조적 특성과 물리적 특성과의 관계를 규명하였다.

• 대한수학회보
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• 제50권3호
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• pp.839-865
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• 2013

We deal with the existence of positive radial solutions concentrating on spheres for the following class of elliptic system $$\large(S) \hfill{400} \{\array{-{\varepsilon}^2{\Delta}u+V_1(x)u=K(x)Q_u(u,v)\;in\;\mathbb{R}^N,\\-{\varepsilon}^2{\Delta}v+V_2(x)v=K(x)Q_v(u,v)\;in\;\mathbb{R}^N,\\u,v{\in}W^{1,2}(\mathbb{R}^N),\;u,v&gt;0\;in\;\mathbb{R}^N,}$$ where ${\varepsilon}$ is a small positive parameter; $V_1$, $V_2{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ and $K{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ are radially symmetric potentials; Q is a $(p+1)$-homogeneous function and p is subcritical, that is, 1 < $p$ < $2^*-1$, where $2^*=2N/(N-2)$ is the critical Sobolev exponent for $N{\geq}3$.

• Progress in Superconductivity
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• 제12권1호
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• pp.46-50
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• 2010

In the superconducting $Sr_2VO_3FeAs$, containing bimetallic layers, with maximum $T_c{\approx}\;46\;K$ correlation effects on V ions have been investigated using LDA+U method. Within the local density approximation (LDA) this system has the one-third filled $t_{2g}$ manifold of V, decomposed into $d_{xy}$ of bandwidth W=2 eV and nearly degenerate $d_{zx}d_{yz}$ of W=1 eV. Consideration of correlation effects leads to a metal-insulator transition on V ions $t^{2\uparrow}_{2g}\;{\rightarrow}\;d^{1\uparrow}_{xz}\;d^{1\uparrow}_{yz}$ at the critical on-site Coulomb repulsion $U_c$= 3.5 eV. At U=4 eV, the electronic structure, in which V ions are insulating, leads to several van Hove singularities near $E_F$ and similar Fermiology with other pnictides. Applying U to V ions results in increasing Fe moment as well as V moment, indicating somewhat hybridization between Fe and V ions even though this system is strongly 2-dimesional. Our results show possible importance of correlation effects on this system.

• 한국진공학회지
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• 제5권3호
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• pp.213-217
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• 1996

서냉법과 용액성장법으로 HgS 및 HgS : Co 결정과 박막을 성장시켜서 결정구조를 조사하고 , 광흡수를 측정했다. 이들 결정 및 박막은 육방정계 구조로써 HgS 및 HgS : Co 결정의 격자상수는 각각 $aa_0=4.155\AA$, $c_0=9.505{\AA}$과 ao=4.148$\AA$, co=9.487$\AA$ 이었다. 또한 HgS 및 HgS박막에 대한 격자상수는 각각 $a_0=4.148{\AA}$, $c_0=9.462{\AA}$와 $a_0=4.135{\AA}$, $c_0=9.442{\AA}$으로 주어졌다. 293K에서 측정된 광학적 에너지 간격은 HgS 및 HgS : Co 결정이 2.040eV, 1.900eV 이고, HgS 및 Hgs : Co 박막은 2.440, 1.940eV 로 각각 주어졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.351-356
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• 1995

A optical switch which on the LiNbO$_3$substrate is fabricated by using proton exchange method and self-alignet method. The annealing at 400[$^{\circ}C$] was carried out to control waveguide width and depth. A self-aligned method, which doesn\`t need the additional mask precesses, was applied to simplify the fabrication processes and to maximize efficiency of electric field application. The depths of the two annealed optical waveguides, which were measured by using ${\alpha}$-step, ware 1.435[K${\AA}$] and 1,380[K${\AA}$]. Using ${\alpha}$-step facility, we examined that the width of waveguides is increased from 5[$\mu\textrm{m}$] to 6.45[$\mu\textrm{m}$] and 6.3[$\mu\textrm{m}$] due to the annealing effects. The process of proton exchange was done at 400[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 60[min]. The high speed optical modulator has very good figures of merits: the measured voltage of the input waveguide power is 3.5[V], the voltage of the coupling waveguide power is 3.9[mV], and -29.5[dB] crosstalk and 8[V] switching voltage were achieved.

• Structural Engineering and Mechanics
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• 제20권3호
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• pp.293-312
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• 2005

In this paper, free vibration of rotating beam with random properties is studied. The cross-sectional area, elasticity modulus, moment of inertia, shear modulus and density are modeled as random fields and the rotational speed as a random variable. To study uncertainty, stochastic finite element method based on second order perturbation method is applied. To discretize random fields, the three methods of midpoint, interpolation and local average are applied and compared. The effects of rotational speed, setting angle, random property variances, discretization scheme, number of elements, correlation of random fields, correlation function form and correlation length on "Coefficient of Variation" (C.O.V.) of first mode eigenvalue are investigated completely. To determine the significant random properties on the variation of first mode eigenvalue the sensitivity analysis is performed. The results are studied for both Timoshenko and Bernoulli-Euler rotating beam. It is shown that the C.O.V. of first mode eigenvalue of Timoshenko and Bernoulli-Euler rotating beams are approximately identical. Also, compared to uncorrelated random fields, the correlated case has larger C.O.V. value. Another important result is, where correlation length is small, the convergence rate is lower and more number of elements are necessary for convergence of final response.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.953-954
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• 2000

The equilibrium geometrical structures of silver atom clusters at their electronic ground states have been theo-retically determined by using the nonrelativistic semiempirical INDO/1 method. The clusters investigated are Agn, Agn+, and Agn- (n = 7 , 8, 9). In order to find the most stable structure, i.e., the global minimum in energy hypersurface, geometry optimization and energy calculation processes have been repeatedly performed for all the possible graphical models by changing the bond parameters (resonance integral values). The heptamers are pentagonal bipyramidal-Ag7(D5h), Ag7+ (D5h), Ag7- (D5h); the octamers are pentagonal bipyramidal with one atom capped-Ag8(D2d), Ag8+ (Cs), Ag8- (D2d); the nonamers are pentagonal bipyramidal with two atoms capped -Ag9(C2v), Ag9+ (C2v), Ag9- (C2v). Our structures are in good agreement with those by ab initio calculations ex-cept for the anionic Ag9- cluster. And it is noted that the INDO/1 method can accurately predict the Ag cluster geometries when a proper set of bond parameters is used.

• 전자공학회논문지A
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• 제28A권12호
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• 대한수학회논문집
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• 제27권3호
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• pp.557-564
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• 2012

This study concerns the existence of positive solution for the following nonlinear system $$\{-div(|x|^{-ap}|{\nabla}u|^{p-2}{\nabla}u)=|x|^{-(a+1)p+c_1}({\alpha}_1f(v)+{\beta}_1h(u)),x{\in}{\Omega},\\-div(|x|^{-bq}|{\nabla}v|q^{-2}{\nabla}v)=|x|^{-(b+1)q+c_2}({\alpha}_2g(u)+{\beta}_2k(v)),x{\in}{\Omega},\\u=v=0,x{\in}{\partial}{\Omega}$$, where ${\Omega}$ is a bounded smooth domain of $\mathbb{R}^N$ with $0{\in}{\Omega}$, 1 < $p,q$ < N, $0{{\leq}}a<\frac{N-p}{p}$, $0{{\leq}}b<\frac{N-q}{q}$ and $c_1$, $c_2$, ${\alpha}_1$, ${\alpha}_2$, ${\beta}_1$, ${\beta}_2$ are positive parameters. Here $f,g,h,k$ : $[0,{\infty}){\rightarrow}[0,{\infty})$ are nondecresing continuous functions and $$\lim_{s{\rightarrow}{\infty}}\frac{f(Ag(s)^{\frac{1}{q-1}})}{s^{p-1}}=0$$ for every A > 0. We discuss the existence of positive solution when $f,g,h$ and $k$ satisfy certain additional conditions. We use the method of sub-super solutions to establish our results.