• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.653-657
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• 2015

A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.1-4
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• 1988

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

• Journal of the Korean Electrochemical Society
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• v.24 no.4
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• pp.113-119
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• 2021

In this study, impurity free V^3.5+ electrolytes were prepared using formic acid as a reducing agent and PtD/C as a catalyst and it was applied to VRFB. The well-oriented 3D dendrite structure of the PtD/C catalyst showed high catalytic activity in formic acid oxidation reaction and vanadium reduction reaction. As a result, the conversion ratio of electrolyte using the PtD/C was 2.73 mol g^-1 h^-1, which was higher than that of 1.67 mol g^-1 h^-1 of Pt/C prepared by the polyol method. In addition, in the VRFB charging and discharging experiment, the V^3.5+ electrolyte produced by the catalytic reaction showed the same performance as the standard V^3.5+ electrolyte prepared by the electrolytic method, thus proving that it can be used as an electrolyte for VRFB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.15-21
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• 1995

In this paper, $TiO_{2}-V_{2}O_{5}$ humidity sensors are fabricated by Sol-Gel method. For the establishment of optimum processing condition which is good humidity sensitive characteristics for specimens, their microstructures and crystalline-structures are analysed. Grain size increases with substitution rate of $V^{5+}$ on $Ti^{4+}$ site. From the analysis of XRD, $V^{5+}$ peak can't confirm with $V_{2}O_{5}$ rate. Their humidity sensitive characteristics is good at 1mol% of $V_{2}O_{5}$ rate and heat-treated at $700^{\circ}C$. The capacitance of specimens decreases with frequency.

• 제어로봇시스템학회:학술대회논문집
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• 1987.10b
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• pp.218-222
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• 1987

The continuously variable transmission (C.V.T.) has been introduced for many years, however, the application of C.V.T. system has been used rather restrictively because of the problems such as reliability, durability, efficiency and, controllability. In this paper, some of the research trends about the control algorithms and the system design method involving C.V.T. is introduced. An engine is assumed in operation along the ideal operating line and it is also considered to be controlled independently to the C.V.T. system. The control simulation has been carried out to confirm it and also the operation performance of the system is investigated.

• Fire Science and Engineering
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• v.18 no.3
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• pp.45-50
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• 2004

Thermal degradation of PVC which used for insulator of 600V vinyl insulated wire has been studied by thermo gravimetry analysis and accelerated thermal aging test. The activation energy using thermo gravimetry analysis was determined by the kinetic methods, such as Kissinger and Flynn-Wall-Ozawa. The activation energy was determined to from 89.29 kJ/mol to 111.39 kJ/mol in 600V PVC insulated wire and from 97.80 kJ/mol to 119.25 kJ/mol in 600v heat-resistant PVC insulated wire. And also, the activation energy through a long-term thermal aging test was calculated by using Arrhenius equation In the low temperature of 8$0^{\circ}C$, 9$0^{\circ}C$, 10$0^{\circ}C$. The results showed that 600V PVC insulated wire was 92.16 kJ/mol, and 600v heat-resistant PVC insulated wire was 97.52 kJ/mol. Consequently, the activation energy of 600V heat-resistant PVC insulated wire is larger than 600V PVC insulated wire. Therefore, it can be predicted that 600V heat-resistant PVC insulated wire has a long-term stability relatively.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 1998.10a
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• pp.376-381
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• 1998

The large scaled field test by prefabricated vertical drains was performed to evaluate the superiority of vertical discharge capacity for drain materials through compare and analyze the time-settlement behavior with drain spacing and the compression index and consolidation coefficient obtained by laboratory experiments and field monitoring system 1. The relation of measurement settlement( $S_{m}$) versus design settlement( $S_{t}$) and measurement consolidation ratio( $U_{m}$) versus design consolidation ratio( $U_{t}$) were shown $S_{m}$=(1.0~l.1) $S_{t}$, $U_{m}$=(1.13~l.17) $U_{t}$, at 1.0m drain spacing and $S_{m}$=(0.7~0.8) $S_{t}$, $U_{m}$=(0.92~0.99) $U_{t}$ at 1.5m drain spacing, respectively. 2. The relation of field compression index( $C_{cfield}$) and virgin compression index( $V_{cclab}$) was shown $C_{cfield}$=(1.0~1.2) $V_{cclab}$, But it was nearly same value when considered the error with determination method of virgin compression index and prediction method of total settlement. 3. field consolidation coefficient was larger than laboratory consolidation coefficient, and the consolidation coefficient ratio( $C_{h}$/ $C_{v}$) were $C_{h}$=(2.4 ~ 3.0) $C_{v}$. $C_{h}$=(3.5 ~ 4.3) $C_{v}$ at 1.0m and 1.5m drain spacing and increased with increasing of drain spacingngasing of drain spacingng spacingng

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.