• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.262-275
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• 1994

SiC/C functionally gradient materials (FGM) were deposited on the graphite substrate by the chemical vapor deposition method. The best deposition conditions of SiC/C FGM were $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$. Despite of discontinuous input gas ratio change, the FGM of which composition was continuously changed could be obtained and continuous structural change without definite interfaces was confirmed by the SEM observation.

• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.218-224
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• 1980

The surface reactions of CO and $C_2H_4$ with adsorbed oxygen on ZnO were studied by means of EPR spectroscopy. The EPR spectra of $O_2$ adsorbed ZnO at various temperatures were compared, and the signal at g = 2.014 was characterized as trapped $O^-$ at oxygen vacancy. CO and $C_2H_4$ react with $O^-$ at $25^{\circ}C$ and desorbed as $CO_2$ and $H_2O$ above $200^{\circ}C$. $O_2^-$ species interact with $C_2H_4$ about $100^{\circ}C$, but desorption of partial oxidation products also was not observed until the temperature was raised to $200^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.17 no.9
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• pp.802-807
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• 1996

Second-order rate constants have been measured spectrophotometrically for the reactions of aryl benzoates (X-C6H4CO2C6H4-Y) with EtO-, Z-C6H4O- and Z-C6H4C(Me)=NO- in absolute ethanol at 25.0 ℃. All the reactions have been performed in the presence of excess 18-crown-6 ether in order to eliminate the catalytic effect shown by alkali metal ion. A good Hammett correlation has been obtained with a large ρ- value (-1.96) when σ- (Z) constant was used for the reaction of p-nitrophenyl benzoate (PNPB) with Z-C6H4O-. Surprisingly, the one for the reaction of PNPB with Z-C6H4C(Me)=NO- gives a small but definitely positive ρ- value (＋0.09). However, for reactions of C6H5CO2C6H4-Y with EtO-, correlation of log k with σ- (Y) constant gives very poor Hammett correlation. A significantly improved linearity has been obtained when σ0 (Y) constant was used, indicating that the leaving group departure is little advanced at the TS of the RDS. For reactions of X-C6H4CO2C6H4-4-NO2 with EtO-, C6H5O- and C6H5C(Me)=NO-, correlations of log k with σ (X) constants for all the three nucleophile systems give good linearity with large positive ρ values, e.g. 2.95, 2.81 and 3.06 for EtO-, C6H5O- and C6H5C(Me)=NO-, respectively. The large ρ values clearly suggest that the present reaction proceeds via a stepwise mechanism in which the formation of the addition intermediate is the RDS.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.266-271
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• 2009

In the recently synthesized rare earth transition metal carbide $La_7O_{s4}C_9$ one finds one-dimensional organometallic $[O_{s4}C_9]^{21-}$ polymers embedded in a $La^{3+}$ ionic matrix. The electronic structure of the polymeric $[O_{s4}C_9]^{21-}$ chain was investigated by density of states (DOS) and crystal orbital overlap population (COOP), using the extended Huckel algorithm. A fragment molecular orbital analysis is used to study the bonding characteristics of the $C_2$ units in $La_7O_{s4}C_9$ containing $C_2$ units and single C atoms as well. The title compound contains partially filled Os and carbon bands leading to metallic conductivity. As the observed distances already indicated, the calculations show extensive Os-C interactions. The C-C bond distance in the diatomic $C_2$ units ($d_{C-C}$=131 pm) in the solid is significantly increased relative to $${C_2}^{2-}$$ or acetylene, because antibonding $1{\pi}_g$ orbitals are partially filled by the Os-$C_2(1\;{\pi}_g)$ bonding contribution found at and below the Fermi level.

• Korean Journal of Ecology and Environment
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• v.49 no.2
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• pp.89-101
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• 2016

To elucidate occurrence patterns of $C_4$ plants in agroecosystems, we surveyed flora inside fields and embankments in 222 sites in farming lands in summer and fall, 2013. We also observed Kranz anatomy and analyzed carbon stable isotope to classify photosynthesis types. Our study observed total 54 species of $C_4$ plants in 33 genera and 9 families of vascular plants besides cultivated crops occurring in farming fields. The most common species was Portulaca oleracea L. followed by Digitaria ciliaris and Echinochloa crusgalli (L.) P. Beauv. var. crusgalli among the $C_4$ plants. The ratios of $C_3$ and $C_4$ species number to total number of species tended to maintain constant regardless of survey times and habitat types. The proportion of $C_4$ species to the total number of species were more influenced by the number of $C_3$ species than those of other types in the surveyed sites. Sizes of cultivation areas did not affect the proportions of $C_4$ plants. Increasing number of simultaneous weeding methods, especially with cutting method, appeared to decrease the number of $C_3$ plants. On the other hand, as the number of cultivated crops increased, both $C_3$ and $C_4$ plants increased but the proportions of $C_4$ species remained. We interpret our results that proportion of $C_4$ species in agroecosystems, appear to be dependent on the number of $C_3$ species, which in turn, appear to be affected by cultivation methods.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1026-1030
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• 1998

Thermal properties of Fe- base amorpous alloys were investigated. $Fe_{80}P_6C_{12}B_{12}$ and $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ amorphous alloys were fabricated by melt spinning method and thermal analysis was done by differential scanning calorimeter. After isothermal crystallization. the Avrami exponents of $Fe_{80}P_6C_{12}B_{12}$ and $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ amorphous alloys were 1.8-2.2 and 2.5-4.0, respectively. It means the former alloy shows diffusion controlled growth and the latter one shows interface controlled growth. For $Fe_{80}P_6C_{12}B_{12}$ and $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ amorphous alloys. the activation energies of isothermal crystallization was 353 and 371kJlmol. Also the activation energies of nucleation and growth were 301, 324kJlmol and 273. 30lkJ/mol, respectively. Thus $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ amorphous alloy is considered to be more stable than $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ amorphous alloy.

• Horticultural Science & Technology
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• v.30 no.5
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• pp.519-526
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• 2012

Anaerobic treated green teas were sealed with aluminum pack and stored for 12 months at three different temperatures such as 25, 4, or $-10^{\circ}C$. Anaerobic green teas were evaluated with respect to physiochemical properties and physiological functions. The longer anaerobic green teas were stored, their total nitrogen, tannins, or chlorophyll contents were reduced. Especially, the lower storage temperature of green tea resulted in less loss of physiochemical contents in green tea. Since green teas stored at $-10^{\circ}C$ exhibited less loss of physiochemical contents, compared to green teas stored at 25 or $4^{\circ}C$. The qualities of green teas stored at $-10^{\circ}C$ for 12 months were similar with those of teas stored at $4^{\circ}C$ for 8 months or stored at $25^{\circ}C$ for 4 months. Since 'a' value (green color) of green tea was considered as an important criteria to evaluate the tea quality. Anaerobic teas stored for 12 months were monitored their 'a' color values with -12.40 (fresh one), -10.54 ($-10^{\circ}C$), -9.77 ($4^{\circ}C$), and -9.06 ($25^{\circ}C$). Sensory evaluation results showed that anaerobic teas at $-10^{\circ}C$ were more favored than those at or 4 or $25^{\circ}C$. In conclusion, optimum storage temperature for anaerobic green teas should be $-10^{\circ}C$.

• Journal of IKEEE
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• v.26 no.1
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• pp.111-118
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• 2022

In this paper, we studied 4H-SiC CMOS that can be integrated with high-voltage SiC power devices. After designing the CMOS on a 4H-SiC substrate, we compared the electrical characteristics with the reliability of high temperature operation by TCAD simulation. In particular, it was confirmed that changing HfO₂ as the gate dielectric for reliable operation at high temperatures improves the thermal properties compared to SiO₂. By researching SiC CMOS devices, we can integrate high-power SiC power devices with SiC CMOS for excellent performance in terms of efficiency and cost of high-power systems.

• Applied Biological Chemistry
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• v.34 no.2
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• pp.81-85
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• 1991

Lipids in dry peas were extracted by the mixture of chloroform-methanol-water, and from the extracted lipids triacylglycerols(TG) were separated by thin layer chromatography. TG were separated into different fractions according to partition numbers by HPLC. Each of these collected fractions was analyzed on the basis of acyl carbon number by GLC, and their fatty acid compositions were also analyzed by GLC. From these results, the possible fatty acid combinations of TG in dry peas were estimated to be thirty three kinds and the major kinds were as follows $C_{16:0}C_{18:2}C_{18:2}(13.4%),\;C_{18:1}C_{18:2}C_{18:3}(9.3%),\;C_{18:1}C_{18:2}C_{18:2}(9.2%),\;C_{18:2}C_{18:2}C_{18:2}(8.1%),\;C_{18:2}C_{18:2}C_{18:3}(6.4%),\;and\;C_{18:0}C_{18:1}C_{18:2}(5.4%)$.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.