Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Deposition of SiC/C functionally gradient materials by chemical vapour deposition

화학기상증착법(CVD)에 의한 SiC/C 경사기능재료의 증착

  • Yootaek Kim (Dept. of Materials Science, Kyonggi University, Suwon 440-760, Korea) ;
  • Nam Hun Kim (Dept. of Materials Science, Kyonggi University, Suwon 440-760, Korea) ;
  • Keun Ho Orr (Dept. of Materials Science, Kyonggi University, Suwon 440-760, Korea)
  • Published : 1994.09.01
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Abstract

SiC/C functionally gradient materials (FGM) were deposited on the graphite substrate by the chemical vapor deposition method. The best deposition conditions of SiC/C FGM were $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$. Despite of discontinuous input gas ratio change, the FGM of which composition was continuously changed could be obtained and continuous structural change without definite interfaces was confirmed by the SEM observation.

SiC/C계 경사기능재료를 화학기상증착법에 의하여 흑연기판위에 증착시키고자 하였다. 본 실험에서 경사기능재료의 최적증착조착조건은 온도 $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$이었다. 불연속적인 입력개시비의 변화에도 불구하고 연속적으로 조성이 변화된 경사기능재료를 얻을 수 있었으며, 명확한 계면이 존재하지 않는 연속적인 구조변화가 주사전자현미경 관찰로 확인되었다.

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