• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.150-152
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) coated conductors were deposited by pulsed laser deposition (PLD) on short buffered substrate in continuous PLD reel-to-reel system. The oxide multilayer buffered substrate of architectures of CeO$_2$/YSZ/Y$_2$O$_3$was fabricated by PLD at steady status. The degree of texture of each layer was investigated using X-ray diffraction including $\theta$-2$\theta$ scans, $\omega$-scans and $\Phi$-scans analysis. Their surface morphology was observed by scanning electron microscopy (SEM) The FWHM of the X-ray $\omega$-scans and $\Phi$-scans indicated that YBCO and buffer layers closely replicate the in-plane and out-of-plane texture of metal tape. Critical current at 77K self-field of 19A, critical temperature of 86K, and current density of 2MA/$\textrm{cm}^2$ were measured. The film also exhibits a homogeneous and dense surface morphology.e morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.21 no.2
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• pp.49-56
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• 1995

Chitosan microcapsules and microbeads were prepared by W/O emulsion method, and their morphologies were observed through SEM. The microcapsules have skin layer of 8 Um and 250 Um of mean diameter, The swelling test showed higher s welling ability in protic solvents than in aphotic solvents. After containing moth-yl violet in the microcapsules, the release patterns were investigated. The results sho wed that the addition of Iysozyme in pH 5.1 acetate buffer accelerated the re-lease rate. In case of the microbeads, the mean diameter was about 70 Um. The surface of the microbeads showed porous structures. The swelling ability of the beads revealed two times higher than the one of the microcapsules.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.387-390
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• 2002

A new approach of using double buffer layers of AlN and GaN for growth of GaN films on Si has been undertaken via molecular beam epitaxy using ammonia. The first buffers layer of AlN was grown using $N_2$plasma and the second of GaN was grown using ammonia. The surface roughness of the grown films was investigated by atomic force microscope and was compared with the normally grown films on sapphire. Double crystal x-ray rocking curve and low temperature photoluminescence techniques were employed for structural and optical properties examination. Donor bound exciton peak at 3.481 eV with full width half maximum of 41 meV was observed at 13K.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.415-420
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• 2008

AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• Journal of Information Processing Systems
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• v.1 no.1 s.1
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• pp.36-40
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• 2005

TRISO (Tri-Isotropic)-coated fuel particle is widely applied due to its higher stability at high temperature and its efficient retention capability for fission products in the HTGR (high temperature gas-cooled reactor), one of the highly efficient Generation IV reactors. The typical ball-type TRISO-coated fuel particle with a diameter of about 1 mm is composed of a nuclear fuel particle as a kernel and of outer coating layers. The coating layers consist of a buffer PyC, inner PyC, SiC, and outer PyC layer. In this study, a digital image processing algorithm is proposed to automatically measure the thickness of the coating layers. An FBP (filtered backprojection) algorithm was applied to reconstruct the CT image using virtual X-ray radiographic images for a simulated TRISO-coated fuel particle. The automatic measurement algorithm was developed to measure the coating thickness for the reconstructed image with noises. The boundary lines were automatically detected, then the coating thickness was circularly by the algorithm. The simulation result showed that the measurement error rate was less than 1.4%.