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http://dx.doi.org/10.4313/TEEM.2011.12.4.169

Implementation of High Carrier Mobility in Al-N Codoped p-Type ZnO Thin Films Fabricated by Direct Current Magnetron Sputtering with ZnO:Al2O3 Ceramic Target  

Jin, Hujie (Department of Physics, Yanbian University)
Xu, Bing (School of Electrical and Information Communication Engineering, Wonkwang University)
Park, Choon-Bae (School of Electrical and Information Communication Engineering, Wonkwang University)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.4, 2011 , pp. 169-173 More about this Journal
Abstract
In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.
Keywords
p-type ZnO film; DC-magnetron sputtering; Al-N codoping; I-V curve;
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