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http://dx.doi.org/10.4313/JKEM.2008.21.5.415

A Study of Pore Formation of AAO Film on Si Substrate with Optimizing Process  

Kwon, Soon-Il (충주대학교 전자공학과)
Yang, Kea-Joon (충주대학교 전자공학과)
Song, Woo-Chang (충주대학교 BINT 신기술연구소)
Lee, Jae-Hyeong (군산대학교 전자정보공학부)
Lim, Dong-Gun (충주대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.5, 2008 , pp. 415-420 More about this Journal
Abstract
AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.
Keywords
Anodization; AAO film; Pore; Oxalic acid; Sulfuric acid;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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