• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1572-1579
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• 2009

In this dissertation ultra-broadband power amplifier(UPA) was designed and fabricated using negative feedback technique. UPA was made of pre-amplifier, drive amplifier and power amplifier. Negative feedback technique was used to achieve ultra-broadband performance. Designed power amplifier has 30dB gain and 2W output power. The load-pull data of power amplifier for optimal power matching was extracted from the measured S-parameter. Fabricated PCB material, permittivity is 4.6 and thickness is 0.8mm, is FR4 and UPA was fabricated 3 modules for comparison of the simulated and measured results. Size of the fabricated pre-amplifier and drive amplifier module is 40mm'50mm'16mm. And from the experimental results, gain of the pre-amplifier module is 9.87dB at 2GHz and flatness is 0.63dB. Experimental result of the drive amplifier module is 10.97dB at 2GHz and flatness of that is 0.26dB. Test result of the power amplifier module is 10.71dB at 2GHz and flatness is 0.72dB. Total size of the power amplifier is 45mm'134mm'16mm. According to the test results, gain of the UPA is 28.98dB at 2GHz and flatness is 1.68dB. Output power was 32.098dBm at 2GHz, 32.154dBm at 1GHz and 31.273dBm at 100MHz.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.221-227
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• 2017

A new approach to designing a broadband and highly efficient class-E power amplifier based on nonlinear shunt capacitance analysis is proposed. The nonlinear shunt capacitance method accurately extracts optimum class-E power amplifier parameters, including an external shunt capacitance and an output impedance, at different frequencies. The dependence of the former parameter on the frequency is considered to select an optimal value of external shunt capacitor. Then, upon determining the latter parameter, an output matching network is optimized to obtain the highest efficiency across the bandwidth of interest. An analytical approach is presented to design the broadband class-E power amplifier of a MOSFET transistor. The proposed method is experimentally verified by a 140-170 MHz class-E power amplifier design with maximum added power efficiency of 82% and output power of 34 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.195-199
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• 2006

A wideband power amplifier for a frequency hopping radio unit is designed. To obtain higher efficiency, it is designed for the Class B mode overdrived. The broadband transformer and feedback circuits are adapted to obtain broadband characteristics. The designed amplifier is simulated using the ADS, which is a CAD software from HPEEsof, Simulation results of the designed amplifier are well suited for the design specifications. The designed amplifier are fabricated. Measured results of the fabricated amplifier well agreed with the simulation results and are in good agreement with the predicted performance.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.3
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• pp.135-140
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• 2019

In this paper, a frequency split type broadband drive amplifier operating in the L, S and C bands was designed and fabricated. Transistor is difficult to efficiently use when the fractional bandwidth of the drive amplifier is more than 100%, In particular, the characteristics of the driving amplifier are important for operating the power amplifier in which the characteristics of the output power and the efficiency are sensitively changed according to the frequency band. A frequency split methods was applied to maximize the bandwidth of a drive amplifier and to divide the output of the drive amplifier into low band and high band so that the transistor of the power amplifier located at the rear of the drive amplifier can be efficiently used. The designed drive amplifier was fabricated in GaAs HBT technology and 9-layer SiP, and verified by the measurements. The fabricated drive amplifier shows a gain of more than 8 dB and an output power of more than 15 dBm in the operating frequency range.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1344-1350
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• 1990

A design method of ultra-broadband microwave amplifier is presented. A lossy network is represented as the combination of a serial impedance component and a parallel admittance component, and the realizable ranges of the gain and the reflection coefficients are derived with the components connected to the input, output or interstage network. The matching network has been designed by using the serial and parallel immittance loci which have the constant gain or reflection coefficients within the realizable ranges. Using the proposed method, deisgn examples of ultra-broadband amplifiers operating from dc to 12GHz frequency range are presented.

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.217-221
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• 2003

In this work, we used a novel RF-CSP to develop a broadband amplifier MMIC, including all the matching and biasing components, for Ku and K band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. STO (SrTiO$_3$) capacitors were employed to integrate the DC biasing components on the MMIC. A pre-matching technique was used for the gate input and drain output of the FETs to achieve a broadband design for the amplifier MMIC. The amplifier CSP MMIC exhibited good RF performance (Gain of 12.5$\pm$1.5 dB, return loss less than -6 dB, PldB of 18.5$\pm$1.5 dBm) over a wide frequency range. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the Ku/K band.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.665-670
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• 2015

In this paper, We proposed a broadband RF amplifier for Microwave band receiver. We also proposed a broadband RF amplifier, designed by using EM simulation for reliable amplification of the received signal. Connected to a source terminal to via, it minimizes those which are the active elements of source-side oscillation as the operating element in an ideal GND, and a constant gain characteristic in a broadband. The goal of this was to obtain stable amplification characteristics. For implementing this architecture, we designed the broadband(500 MHz ~ 7 GHz) RF amplifier by using commercial GaAs FET, which operate on 720 MHz, 4,595 MHz, and 6,035 MHz by impedance matching. The voltage gain is 10.635 dB ~ 14.407 dB(737.5 MHz ~ 6.0575 GHz), P1dB is 20 dBc of band(1st harmonic/2nd harmonic).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.6
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• pp.247-252
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• 2003

In this paper, we have designed and fabricated a broadband 2-stage MMIC amplifier. Broadband characteristics could be obtained by compensated matching networks in a 2-stage amplifier design. This method is compensating low gains at lower frequencies in the 1st-stage with higher gains at lower frequencies in the 2nd- stage and then finally flat gains are obtained in the wide frequency ranges. Also, we have obtained not only broadband characteristics but also high gain using compensation matching network. The fabricated amplifier is measured by attaching on the test PCB(Printed Circuits Board). The measurement results are bandwidth of 1.1~2.8 GHz, S$_{21}$ gain of 11.1$\pm$0.3 ㏈ and P1㏈ of 12.6 ㏈m at 2.4 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1529-1533
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• 2005

In this paper designed available pre-amplifier to Intrabroadband power amplifier. Designed pre-amplifier used WJ company's AMI which frequency characteristic and noise characteristic are superior. Designed to have superior VSWR characteristic and frequency characteristic covering broadband of 100MHz ${\~}$ 3GHz using feedback. Designed ye-amp broadband special qualify such as EMC measurement equipment roll important position do to utilize to power amplifier of equipment that how consider.