• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Journal of Mechanical Science and Technology
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• v.17 no.6
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• pp.914-924
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• 2003

The interaction and breakdown of vortices over the Leading Edge Extension (LEX) - Delta wing configuration has been investigated through wing-surface pressure measurements, the off-surface flow visualization, and 5-hole probe measurements of the wing wake section. The description focused on analyzing the interaction and the breakdown of vortices depending on the angle of attack and the sideslip angle. The Effect of angle of attack and sideslip angle on the aerodynamic load characteristics of the model is also presented. The sideslip angle was found to be a very influential parameter of the vortex flow over the LEX-delta wing configuration. The introduction of LEX vortex stabilized the vortex flow, and delayed the vortex breakdown up to a higher angle of attack. The vortex interaction and breakdown was promoted on the windward side, whereas it was suppressed on the leeward side.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.18-22
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• 2005

We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.125-129
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• 1996

This study describes that electrical breakdown of liquid nitrogen which is influenced with bubble has been investigated as liquid nitrogen is used coolant of high temperature(T/sub c/) superconductivity. In order to investigate breakdown of liquid nitrogen, we formed electrode system of parallel and vertical configuration toward gravitutional direction. In case of changing with electrode configuration of equal electrode and gap spacing in uniform and nonuniform electric field bubble behavior is changed. In result of that, breakdown voltage is changed. Therefore, this study proved that electrode configuration must be formed the smallest existing probability of bubble between two electrodes in order to increase breakdown strength of liquid nitrogen at atmosphere pressure.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1255-1259
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• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.366-367
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• 2008

SF6 widely used as insulating gas is rising as the environment problem. For decreasing this greenhouse gas, electrical breakdown characteristics of vacuum with air are studied in non-uniform field. The gap of needle to plane was 0.5mm, 0.8mm. The pressure of vacuum the range of 10^-4-10^-5torr. The diameter of a plane made of the stainless steel is150mm. As a result of the experiment, the breakdown voltage is increased about electrode gap distance increased. The electrode material influenced breakdown voltage in vacuum.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.164-169
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• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• Progress in Superconductivity and Cryogenics
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• v.4 no.2
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• pp.1-4
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• 2002

Electrical properties of liquid nitrogen ($LN_2$) and gaseous nitrogen($GN_2$) have become of great interest again since the discovery of high temperature superconductors . It is very important from a point of superconducting apparatus protection to elucidate breakdown characteristics in $LN_2$ and $GN_2$ at atmospheric and pressurized conditions Therefore. this paper studies the effect of pressure on the breakdown characteristics in $LN_2$ and $GN_2$. Af high voltage is applied to electrode system with uniform and non-unform field in various gap length. And Breakdown voltages of $LN_2$ and $GN_2$ are investigated under AC voltage for Pressure ranging from 0 and 0.5 MPa. This research presented basis information of electrical insulation design for liquid nitrogen immersed HTS power apparatus.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.605-610
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• 1999

An SOI(Silicon-On-Insulator) LD(Lateral Double-diffused)MOS with a recessed source structure is proposed to improve the on-resistance and the breakdown voltage. The recessed source structure can decrease the on-resistance by reducing the path of electron current, also increase the breakdown voltage by extending the effective length of gate field plate. Simulation results by TSUPREM4 and MEDICI have shown that the on-resistance of the LDMOS with a recessed source was 26% lower than conventional LDMOS. The breakdown voltage of proposed device was found to be 45V while that of conventional device was 36.5 V. At the same breakdown voltage of 36.5V, the on-resistance of the LDMOS with a recessed source was 41% lower than that of conventional structure.