• Proceedings of the Korean Institute Of Construction Engineering and Management
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• autumn
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• pp.422-427
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• 2001

There are many problems such as uncertainty of sequencing and irrational interdependence of processes in work breakdown structure of construction project. This study suggests work structuring for improving work reliability and transparency of processes to solve problems of work breakdown structure. Also, It proposes a process design diagram The goal of improving process design by work structuring is to make work flow more reliable and quick while delivering value to the customer. The process design diagram aims at achieving lean project objectives, such as, reduction in the share of non-value adding activities, increased transparency, process simplification and increased product flexibility.

• Land and Housing Review
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• v.10 no.3
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• pp.77-87
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• 2019

In Korea, the modular construction method was applied to the construction of facilities such as military barracks and school dormitories, beginning with the pilot project of Seoul New Elementary School in 2003. In 2017, public modular houses were supplied to Busan(Yongho-dong) and Seoul(Gayang-dong), and modular housing is expected to continue to be supplied in the future. However, there is no clear construction standard for the modular housing construction yet, and there are few cases where the infill modular system is applied. Therefore, this study established the work breakdown structure and proposed a standard process focusing on the infill modular system applied to the construction of Dujeong-dong modular house in Cheonan. Level 1 of the work breakdown structure by construction stage of Infill modular was defined as modular manufacturing, assembly, and finishing process. Level 2 was defined as preparation, modular production, modular infill, modular fixing, floor plastering, building finishing, and other site finishing. Level 3 is defined as 57 detailed unit work of infill modular construction. The standard process of infill modular is proposed for the assembly stage that is commonly applicable to infill modular housing construction. The results of this study can be used for the process plan, transportation plan, lifting plan of modular housing construction.

• Journal of IKEEE
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• v.23 no.3
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• pp.756-761
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• 2019

In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.23-28
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• 2006

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Korean Journal of Construction Engineering and Management
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• v.8 no.6
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• pp.178-187
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• 2007

As the government has enforced recently the policies on the distribution of the housing, the construction cost of multi-family housing projects has increasingly become very sensitive and political issue. However, it is difficult to predict the construction cost in planning and design phase of the project because the Bill of Quantity of the multi-family housing projects was composed of breakdown structure based on each work package. To predict the construction cost in planning and design phase for multi-family housing projects in more effective and reasonable way, this study developed the cost breakdown structure based on spaces using Delphi method. The Cost Breakdown Structure (CBS) based on spaces for multi-family housing projects basically consists of three parts: (i) Building part; (ii) Non-building part; and (iii) Additional part. The characteristics of spaces in multi-family housing projects are fully taken into consideration. Then these three parts were subdivided into work packages in terms of work tasks. Additionally, the usefulness and effectiveness of Space CBS in this paper were validated by analyzing the BOQs of several collected sample projects and matching with Space CBS afterwards.

• Journal of the Korea Institute of Building Construction
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• v.13 no.4
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• pp.321-332
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• 2013

Costs and expenses are intertwined and incurred throughout an entire construction project, even from the pre-construction phase, and each phase has a different impact on the life cycle cost (LCC). However, the cost breakdown structure (CBS) is different in each phase of a building construction project, which makes it hard to reasonably calculate construction cost. For this reason, the boundary conditions were analyzed in this study based on the life cycle cost break structure (LCCBS). In addition, breakdown factors were analyzed based on the boundary conditions to derive a linkage method. The validity of the linkage method was verified through application to actual construction projects. Through the analysis, it was found that the problem of items being left out was reduced by more than 97.2 percent, and the work was done an average of 6 hours faster compared to the conventional method. It is expected that by applying the new LCC system, LCC will be both reduced and calculated in a more efficient manner.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2007.11a
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• pp.499-502
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• 2007

The government abolished the existing method to calculate the construction price by the quantity take-off and pricing. It has introduced a new estimating system which uses the actual cost data on the basis of actual contract unit price. However, in the case of the current method to calculate the estimate price of BTL educational facilities, it is difficult to prepare an accurate ground for calculating unit prices due to a lack of standardized work breakdown structure (WBS) and guidelines for the detailed bidding documents. Thus, this research aims to establish WBS using the actual construction price on the basis of the actual bidding documents for the previous construction of BTL educational facilities. This specific WBS can be differentiated from the general WBS which is not suited for construction of the educational facility. It makes possible to build the construction information classification system and it helps to systemize the maintenance and repair cost items.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.847-850
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• 1998

This paper proposes a new scheme of FLR for improving corner breakdown voltage. The major difference from the conventional FLR is to build extra rings and floating field plates in the corner region. In this structure the additional field plate and ring have reduced th electric field at the junction in the corner region. Thus it improves the breakdown characteristics which are critical for obtaining high breakdown voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.609-613
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• 2023

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.