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Simulation Study on the Breakdown Enhancement for InAlAs/InGaAs/GaAs MHEMTs with an InP-Etchstop Layer  

Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.12, no.3, 2013 , pp. 23-27 More about this Journal
Abstract
This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.
Keywords
Millimeter wave; HEMT; Metamorphic HEMT (MHEMT); Device simulation; Hydrodynamic transport simulation; Design of Epitaxial layers; Cutoff frequency; Maximum oscillation frequency; Breakdown;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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