• 한국해양환경ㆍ에너지학회지
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• 제13권1호
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• pp.47-52
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• 2010

근해에 설치되는 3차원 착저식 OWC 파력발전 챔버 구조물의 파 에너지 흡수효율과 구조물에 작용하는 1차 및 시간 평균 2차 파랑하중의 해석기법을 보였다. 쌍동형 OWC챔버 내부의 변동압력을 각 챔버의 내부 자유표면 경계조건에 도입하였으며 챔버 내부는 Rankine, 외부는 유한수심 3차원 자유표면 Green함수에 연계된 하이브리드 적분방정식을 사용하여 포텐셜 유동을 해석하였다. 수치실험 결과로서 3차원 착저식 OWC 파일럿 플랜트의 파력발전 1차변환 효율과 구조물에 작용하는 반복 및 지속적인 파랑하중을 제시하였다.

• 대한기계학회논문집A
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• 제21권7호
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• pp.1141-1148
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• 1997

In the stamping industry the blank shape to be stamped into a designed shape has been conventionally determined from the try out process by the press engineers. The work needs a lot of time and thus leads a loss of productivity. In this study boundary element method for 2-dimensional potential problem was used to design optimum blank shapes for irregular press forming. Here we assumed that the blank is controlled by blank holder only and material flow at blank holder was under potential flow. The developed PC code for designing the optimum blank shape shows that the blank shapes for optimal drawing can be calculated within a few minute in pentium PC and the calculated shapes agree well with the experiments. However the application of this method is constrained only to the pressed product with flat bottom.

• 조명전기설비학회논문지
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• 제25권6호
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• pp.68-74
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• 2011

The touch or step voltages which exist in the vicinity of a grounding electrode are closely related to the earth structure and resistivity and the ground current. The grounding design approach is required to determine the grounding electrode location where the hazardous voltages are minimized. In this paper, in order to propose a method of mitigating the electric shock hazards caused by the ground surface potential rise in the vicinity of a counterpoise, the hazards relevant to touch voltage were evaluated as a function of the soil resistivity ratio $\rho_2/\rho_1$ for several practical values of two-layer earth structures. The touch voltage and current on the ground surface just above the test electrode are calculated with CDEGS program. As a consequence, it was found that burying a grounding electrode in the soil with low resistivity is effective to reduce the electric shock hazards. In the case that the bottom layer soil where a counterpoise is buried has lower resistivity than the upper layer soil, when the upper layer soil resistivity is increased, the surface potential is slightly raised, but the current through the human body is reduced with increasing the upper layer soil resistivity because of the greater contact resistance between the earth surface and the feet. The electric shock hazard in the vicinity of grounding electrodes is closely related to soil structure and resistivity and are reduced with increasing the ration of the upper layer resistivity to the bottom layer resistivity in two-layer soil.

• 대한토목학회논문집
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• 제29권5B호
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• pp.493-496
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• 2009

본 연구에서 Euler-Lagrange 식을 사용하여 속도포텐셜로 표현되는 확장형 완경사방정식을 유도하였다. 먼저, Euler-Lagrange 식을 사용하여 흐름함수로 표현된 확장형 완경사방정식을 유도한 Kim과 Bai(2004)의 유도과정을 따라가면서 속도 표텐셜로 표현된 확장형 완경사방정식과의 관계를 찾았다. 속도포텐셜로 표현된 Euler-Lagrange 식을 찾아낸 다음 고차의 수심변화 항을 유도하였다. 본 연구에서 유도된 확장형 완경사방정식은 기존의 식인 Massel(1993)의 식과 Chamberlain과 Porter(1995)의 식과 정확히 일치하였다. 본 연구의 연구 성과는 확장형 완경사방정식의 유도 방법을 새로 제시하여 해안공학의 영역을 넓히는데 의의가 있다.

• 전기학회논문지
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• 제58권6호
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• pp.1151-1156
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• 2009

Unstable sustain discharges can occur at the bottom cells of the panel at high temperature. To solve this problem, the wall charge variation during an address period was investigated. A test panel of 7.5 inch XGA level was used and one green cell was measured. In order to realize operating condition equal to that of the bottom cells of 50 inch panel, the addressing stress pulses are applied. It seems that the resultant wall charge loss during address period increased with increase of stress time, temperature, pressure and Xe %. Wall charge loss increases with potential difference between scan electrode and address electrode, therefore wall charge loss can be minimized by the increase of scan voltage during address period.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.40-45
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• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국언어정보학회지:언어와정보
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• 제8권2호
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• pp.1-25
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• 2004

This paper examines two different approaches to resolving a theoretical problem which the bottom-up approach version of Discourse Representation Theory of Kamp et al. (2003) faces in dealing with anaphoric relations between pronouns and their potential antecedents in conditional sentences where consequent clauses precede their corresponding conditional clauses. In one of the approaches, every element is processed in the order of occurrence and conditional operators in a non-sentence-initial position cause the ongoing DR to split in two with the same index. The definition of accessibility is accordingly modified so that the right DR can be accessible from the left DR. In the other approach, a different type of discourse representation structure, K ${\Leftarrow}$ K, is introduced, which allows us to resolve the target problem without modifying accessibility proposed in Kamp et al. (2003). Compatibility of these two approaches with the bottom-up version of DRT is evaluated by examining their applicability to the analysis of quantified sentences where pronominal expressions precede generalized quantifiers.

• 한국해안해양공학회지
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• 제6권3호
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• pp.275-280
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• 1994

바닥영향을 받는 수평원형 실린더에 작용하는 힘에 대한 해석해를 복소포텐셜을 이용하여 재유도하였다. 본 연구에서 해석해를 재유도한 이유는 Yamamoto 등(1974)이 유도한 해석해는 부가질량제수가 거동하는 경향을 정확하게 설명하지 못하고있기 때문이다. 재유도한 부가질량계수 CM은 Yamamoto 등(1974)의 $C_{M}$ 과 다르며, 또한 부가질랑계수가 거동하는 경향을 만족하게 설명하고 있음을 알 수 있었다.

• 한국정보통신학회논문지
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• 제20권4호
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• pp.805-810
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• 2016

본 논문에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도에 대한 드레인 유도 장벽 감소 현상에 대하여 분석하고자한다. 드레인 유도 장벽 감소 현상은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑 농도뿐만이 아니라 상하단 산화막 두께, 하단 게이트 전압 등에 대하여 드레인 유도 장벽 감소 현상을 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 채널도핑 농도에 따라 큰 변화를 나타냈다. 채널길이가 25 nm 이하로 감소하면 드레인 유도 장벽 감소 현상은 급격히 상승하며 채널도핑농도에도 영향을 받는 것으로 나타났다. 산화막 두께가 증가할수록 도핑농도에 따른 드레인유도장벽감소 현상의 변화가 증가하는 것을 알 수 있었다. 채널도핑 농도에 관계없이 일정한 DIBL을 유지하기 위하여 상단과 하단의 게이트 산화막 두께가 반비례하는 것을 알 수 있었다. 또한 하단게이트 전압은 그 크기에 따라 도핑농도의 영향이 변화하고 있다는 것을 알 수 있었다.