• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Society of Naval Architects of Korea
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• v.36 no.3
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• pp.1-7
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• 1999

This paper describes the modification of hull bottom for the air lubrication technique to the passenger boat in service at the Chung-Ju lake, which has a large beam-draft ratio. From numerical analysis of 2-D cavity problem by potential theory, the cavity shape, length and the pressure in cavity are estimated for the simplified geometry of hull bottom, and the non-dimensional parameters affecting air cavity phenomena are investigated. Extensive resistance tests for the model ship which has variation of step height and side strip have been performed to investigate the formation of air cavity and the drag reduction effectiveness. And also, the development of attached cavity to the bottom were observed from the flat bottom made by transparent acrylic plate. From this survey on the modification of bottom shape and the air lubrication technique, the total resistance of model ship could be reduced by about 25% at the design speed compared to the proto type hull form.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.10
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• pp.941-948
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• 2017

Recently, hydrogen energy has been in the spotlight as an alternative to diminishing fossil fuels and as a potential solution to environmental pollution. The development of hydrogen-fueled vehicles and the demands for improved fuel efficiencies have resulted in the need to increase the volume of the hydrogen pressure vessels. Pressure vessels having an elliptical bottom, as opposed to one that is hemispherical, allow for a greater capacity. However, there are insufficient studies on the feasibility of the forming process required for an elliptical bottom. In this study, the liner capacity is calculated according to the ratios of the major to the minor axes of the elliptical bottom part in a hydrogen pressure vessel. Structural safety is verified through finite element analyses, and the results are compared to the theoretical results. The feasibility of the proposed elliptical shape of the pressure vessel bottom, while filled to maximum capacity, is validated through forming analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of Korean Society on Water Environment
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• v.18 no.3
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• pp.253-260
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• 2002

The purpose of this research was to describe the mechanisms and prevention of initial degradation in turbidity of the sand filter effluent. The method used was by adding a coagulant (PAC) to the sand filter after backwashing as a means of reducing turbidity. It was found that adding 80 mg/L of PAC solution to the sand filter was very effective in improving the initial effluent turbidity. A turbidity removal efficiency of 99 % was observed in the initial term period as compared to a 70% efficiency without PAC addition. The PAC solution added to the sand filter resulted in high aluminum concentration at the upper layer as compared with the bottom layer of the sand filter column. A change in the zeta potential to a strong positive-ions at upper layer was observed at this time but only a small change was obtained at the bottom. This result showed that the zeta potential of the sand was changed to positive with PAC coating. The effect of pH on zeta potential with PAC addition was also investigated. Zeta potential was greatly changed to positive-ion at pH 4~6. A series of experiments was then conducted in this study to optimize the pH of the PAC solution to be added to the sand filter after backwashing. The removal efficiency of turbidity was found to be highest at pH 5. This result suggested that hydrolyzed aluminium species attached to the surface of the sand enhanced the removal of turbidity of the effluent.

• Geomechanics and Engineering
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• v.16 no.1
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• pp.105-112
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• 2018

This paper presents results of a compressive investigation conducted on weathered soil stabilized with ground bottom ash (GBA) and red mud (RM). The effects of water/binder ratio, RM/GBA ratio, chemical activator (NaOH and $Na_2SiO_3$) and curing time on unconfined compressive strength of stabilized soils were examined. The results show that the water/binder ratio of 1.2 is optimum ratio at which the stabilized soils have the maximum compressive strength. For 28 days of curing, the compressive strength of soils stabilized with alkali-activated GBA and RM varies between 1.5 MPa and 4.1 MPa. The addition of GBA, RM and chemical activators enhanced strength development and the rate of strength improvement was more significant at the later age than at the early age. The potential environmental impacts of stabilized soils were also assessed. The chemical property changes of leachate from stabilized soils were analyzed in terms of pH and concentrations of hazardous elements. The observation revealed that the soil mixture with ground bottom ash and red mud proved environmentally safe.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.128-128
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• 2016

Cu 배선폭 미세화 기술은 반도체 디바이스의 성능 향상을 위한 핵심 기술이다. 현재 배선 기술은 lithography, deposition, planarization등 종합적인 공정 기술의 발전에 따라 10x nm scale까지 감소하였다. 하지만 지속적인 feature size 감소를 위하여 요구되는 높은 공정 기술 및 비용과 배선폭 미세화로 인한 재료의 물리적 한계로 인하여 배선폭 미세화를 통한 성능의 향상에는 한계가 있다. 배선폭 미세화를 통한 2차원적인 집적도 향상과는 별개로 chip들의 3차원 적층을 통하여 반도체 디바이스의 성능 향상이 가능하다. 칩들의 3차원 적층을 위해서는 별도의 3차원 배선 기술이 요구되는데, TSV(through-Si-via)방식은 Si기판을 관통하는 via를 통하여 chip간의 전기신호 교환이 최단거리에서 이루어지는 가장 진보된 형태의 3차원 배선 기술이다. Si 기판에 $50{\mu}m$이상 깊이의 via 및 seed layer를 형성 한 후 습식전해증착법을 이용하여 Cu 배선이 이루어지는데, via 내부 Cu ion 공급 한계로 인하여 일반적인 공정으로는 void와 같은 defect가 형성되어 배선 신뢰성에 문제를 발생시킨다. 이를 해결하기 위해 각종 유기 첨가제가 사용되는데, suppressor를 사용하여 Si 기판 상층부와 via 측면벽의 Cu 증착을 억제하고, accelerator를 사용하여 via 바닥면의 Cu 성장속도를 증가시켜 bottom-up TSV filling을 유도하는 방식이 일반적이다. 이론적으로, Bottom-up TSV filling은 sample 전체에서 Cu 성장을 억제하는 suppressor가 via bottom의 강한 potential로 인하여 국부적 탈착되고 via bottom에서만 Cu가 증착되어 되어 이루어지므로, accelerator가 없이도 void-free TSV filling이 가능하다. Accelerator가 Suppressor를 치환하여 오히려 bottom-up TSV filling을 방해한다는 보고도 있었다. 본 연구에서는 유기 첨가제의 치환으로 인한 TSV filling performance 저하를 방지하고, 유기 첨가제 조성을 단순화하여 용액 관리가 용이하도록 하기 위하여 suppressor만을 이용한 TSV filling 연구를 진행하였다. 먼저, suppressor의 흡착, 탈착 특성을 이해하기 위한 연구가 진행되었고, 이를 바탕으로 suppressor만을 이용한 bottom-up Cu TSV filling이 진행되었다. 최종적으로 $60{\mu}m$ 깊이의 TSV를 1000초 내에 void-free filling하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.755-758
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend very differs with bottom gate voltage, channel length and thickness, and doping concentration.