• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.86.3-86
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• 2001

Hall effect sensor using 7um, 1.7 ohm-cm or 10um, 3.5 ohm-cm Bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes to optimize offset voltage and sensitivity for proper applications. In order to measure offset voltage in chip scale the Agilent company´s 4156C and Nano-Voltage Meter were used and the best structure in offset voltage was finally selected by using ceramic package. The patterns appear to be the quadri-rectangular patterns entirely and three-parallelogram patterns. The measured offset voltages were found to be about 173-365uV. Meanwhile, in ...

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.923-928
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• 1986

This paper describes the design and fabrication of a high performance digital tuning analog component integrated circuit that contains a television station detector and decoders(H and L types). When the comparator level sampling method is used, this integrated circuit can be used as a stable channel selector for an external circuit with very large signal variation. It has been fabricated using the SST bipolar standard process and its chip size is 2.2x2.1mm\ulcorner As a result, we have succeeded in fabricating the IC that satisfies the D.C characteristics, and the channel station detector and decoder function.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.795-800
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• 1986

High value sheet resistance (Rs, 350\ulcorner/ -80K\ulcorner/) born implanted polysilicon resistors were fabricated under process conditions compatible with bipolar integrated circuits fabrications. This paper includes studies of sensitivity of Rs to doping concentration, the effect of thermal annealing temperature on Rs, temperature coefficient of resistance (TCR), the effect of polysilicon thickness on Rs and the Rs variation within a run and between runs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.747-753
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• 1986

This paper describes the design and fabrication of a digital volume control integrated circuit which replaces a mechanical volume control. The integrated circuit can be controlled volume by up/down switch. It has been fabricated by SST bipolar standard process. Its chip size is 2.5x2.5 mm\ulcorner As a result, we succeeded in fabrication of integrated circuit which satisfied DC characteristics and proper operation of volume control.

• The Magazine of the IEIE
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• v.35 no.7
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• pp.57-71
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• 2008

The last decade has witnessed great improvements in power semiconductor devices thanks to the advanced design and process, which have made it possible to significantly improve the electrical performances of electronic systems while simultaneously reducing their site, weight and perhaps most importantly reducing their cost. Among the power semiconductor devices, IGBT will be a key semiconductor component for power industry since it has a huge potential to cover large areas of power electronics from small home appliances to heavy industries. Currently, only a few limited power semiconductor manufacturers supply most of the industrial consumptions of power IGBT and its modules. Therefore, a large portion of technology in the power industry is dependent on other advanced countries. In this regard, to independently build power IGBT devices and the relevant power module technology, Korean government initiated a new 5-year project 'Power IT,' which also aimed at booming the business of the power semiconductor and the allied industries. With the success of this power IT project, it is expected that the power semiconductor technology will be a basis to foster the high power semiconductor industry and moreover, there will be more innovative developments in the Korea region and globally Also, forming the channel between the customers and suppliers, it is possible to effectively develop the customized power products, which could strengthen the competitiveness of Korean power industry. Furthermore, the power industry including semiconductor manufacturers will be technologically self-supporting and be able to obtain good business opportunities, and eventually increase the share in the growing power semiconductor market, which could be positioned as a major industry in Korea.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.907-911
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• 2006

In this paper, we propose a new structure that improves the on-state voltage drop and switching speed in Insulated Gate Bipolar Transistors(IGBTs), which can be widely used in high voltage semiconductors. The proposed structure is unique in that the collector area is divided by $SiO_2$, whereas the conventional IGBT has a planar P+ collector structure. The process and device simulation results show remarkably improved on-state and switching characteristics. Also, the current and electric field distribution indicate that the segmented collector structure has increased electric field near the $SiO_2$ corner, which leads to an increase of electron current. This results in a decrease of on-state resistance and voltage drop to $30%{\sim}40%$. Also, since the area of the P+ region is decreased compared to existing structures, the hole injection decreases and leads to an increase of switching speed to 30 %. In spite of some complexity in process procedures, this structure can be manufactured with remarkably improved characteristics.

• BMB Reports
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• v.47 no.5
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• pp.249-255
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• 2014

Polo-like kinase-1 (Plk1) belongs to a family of serine-threonine kinases and plays a critical role in mitotic progression. Plk1 involves in the initiation of mitosis, centrosome maturation, bipolar spindle formation, and cytokinesis, well-reported as traditional functions of Plk1. In this review, we discuss the role of Plk1 during DNA damage response beyond the functions in mitotsis. When DNA is damaged in cells under various stress conditions, the checkpoint mechanism is activated to allow cells to have enough time for repair. When damage is repaired, cells progress continuously their division, which is called checkpoint recovery. If damage is too severe to repair, cells undergo apoptotic pathway. If damage is not completely repaired, cells undergo a process called checkpoint adaptation, and resume cell division cycle with damaged DNA. Plk1 targets and regulates many key factors in the process of damage response, and we deal with these subjects in this review.

• Applied Chemistry for Engineering
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• v.30 no.6
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• pp.742-748
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• 2019

Influence of several experimental parameters (e.g., initial dye concentration, pH, distance between electrodes, applied voltage, electrical conductivity, current density, and reaction time) on the performance of electrocoagulation (EC) process for the removal of acid blue 25 (AB25) was studied. A bipolar batch reactor was used to test the impact of the parameters. The removal efficiency (RE) of AB25 dye was promoted by increasing the contact time, voltage, electrical conductivity, and applied current density. In contrast, RE of AB25 decreased with higher level of AB25 and the longer distance between electrodes. The removal efficiency increased consistently until pH 7, but decreased above pH 7. The maximum efficiency of AB25 removal above 90% was obtained at a voltage of 60 V, reaction time of 90 min, distance between electrodes of 0.5 cm, initial concentration of 25 mg/L, conductivity of 3,000 μS/cm and pH of 7. These results imply that the high RE of AB25 dye from the aqueous solution can be achieved by EC process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.5
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• pp.89-96
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• 2007

Inkjet printing has become one of the most attractive manufacturing techniques in industry. Especially inkjet printing technology will soon be part of the PCB (Printed Circuit Board) fabrication processes. Traditional printing on PCB includes screen printing and photolithography. These technologies involve high costs, time-consuming procedures and several process steps. However, by inkjet technology manufacturing time and production costs can be reduced, and procedures can be more efficient. PCB manufacturers therefore willingly accept this inkjet technology to the PCB industry, and are quickly shifting from conventional to inkjet printing. To produce the printed circuit board by the inkjet technology, it must be harmonized with conductive nano ink, printing process, system, and inkjet printhead. In this study, micro patterning of conductive line has been investigated using the piezoelectric printhead driven by a bipolar voltage signal is used to dispense 20-40 ${\mu}m$ diameter droplets and silver nano ink which consists of 1 to 50 nm silver particles that are homogeneously suspended in an organic carrier. To fabricate a conductive line used in PCB with high precision, a printed line width was calculated and compared with printing results.