Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 23 Issue 6
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- Pages.795-800
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- 1986
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- 1016-135X(pISSN)
The Electrical Properties of Polycrystalline Silicon Resistors
다결정 실리콘 저항의 전기적 특성
- Park, Jong Tae (Dept. of Elec. Eng., Yonsei Univ.) ;
- Choi, Min Sung (Gold Star Semiconductor Ltd, R&D) ;
- Lee, Moon Key (Dept. of Elec. Eng., Yonsei Univ.) ;
- Kim, Bong Ryul (Dept. of Elec. Eng., Yonsei Univ.)
- 박종태 (연세대학교 전자공학과) ;
- 최민성 (금성반도체주식회사 연구소) ;
- 이문기 (연세대학교 전자공학과) ;
- 김봉렬 (연세대학교 전자공학과)
- Published : 1986.06.01
Abstract
High value sheet resistance (Rs, 350\ulcorner/ -80K\ulcorner/) born implanted polysilicon resistors were fabricated under process conditions compatible with bipolar integrated circuits fabrications. This paper includes studies of sensitivity of Rs to doping concentration, the effect of thermal annealing temperature on Rs, temperature coefficient of resistance (TCR), the effect of polysilicon thickness on Rs and the Rs variation within a run and between runs.
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