• Korean Journal of Materials Research
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• v.7 no.10
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• pp.871-871
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• 1997

(1-x)CaTiO/sub 3/-xLa(Zn/sub 1/2/Ti/sub 1/2/)O/sub 3/의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍf/sub 0/는 증가하였다. 그 결과 x=0.5인 (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/)O/sub 3/의 조성에서 ε/sub r/=51, Qㆍf/sub 0/=38,000 (at 7 GHz), τ/sub f/=+5ppm/℃의 유전특성이 나타났다. (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/) O/sub 3/조성의 소결온도를 저하시키기 위하여 Bi/sub 2/O/sub 3/를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 150℃ 낮아졌으며, 비유전율 (ε/sub r/), 공진주파수의 온도계수(τ/sub f), Qㆍf/sub 0/가 각각 50+5ppm/℃, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 200℃ 저하되었고, 비유전율 (ε/sub r/)과 공진주파수의 온도계수 (τ/sub f)는 변하기 않았으나, Qㆍf/sub 0/값이 38,000에서 25,000으로 저하되었다.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.670-675
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• 2004

Glasses in the $Bi_{2}O_3-SiO_2-ZnO$ glasses system were examined as a potential replacement for lead-oxide glass frits with low firing temperature ($500\sim600^{\circ}C$) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature($T_{g}$) and thermal expansion coefficient(${\alpha}$). After forming transparent thick films by a screen-printing method, it was evaluated for the optical properties. The transmittance of thick films fired at $500-600^{\circ}C$ showed above $80\%$, which was not dependent on the firing temperature. As a result, many pores were observed at samples fired at low temperature, while the number of pores from samples prepared at high temperature decreased and the pores size increased.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1522-1524
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• 1998

Experimental results on the effect of $SiO_2$ addition to Bi based ZnO varistor show that secondary phases in microstructure and nonlinear coefficient are increased, and that leakage current is decreased with $SiO_2$ additive content. The varistor with 0.1 mol%-$SiO_2$ additive exhibits lower resistive current than other specimen at ($E_{1mA}$ x 0.6) applied voltage and temperature of $115^{\circ}C$ for 350h.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.13-22
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• 1981

This study is to investigate the effective mineralizer in the manufacture of forsterite porcelain as a high frequency insulator. A mixture of $Mg(OH)_2$. and $SiO_2$.($\alpha$-Quartz) corresponding to the molar ratio of 2.0 MgO: 1.0 $SiO_2$ was prepared from the materials of high purity. It was heated to 140$0^{\circ}C$ at the rate of 20$0^{\circ}C$/hr, which was kept constantly for 1 hour, and one has made chamotte after cooling. Six kinds of glasses were prepared by an 0.1 atomic equivalent of K ions substitution-Ba, Bi, Zn, Cd, Zr-to the basic K-glass (0.333 $K_2O$.1.14 $SiO_2$) and were melted approximately at 150$0^{\circ}C$. The forsterite bodies were provided by adding each glass (10, 15, 20, 25, 30%) to the forsterite chamotte, which was fired at 1320, 1360, 1400, 144$0^{\circ}C$. (1 hr). One has examined the physical and dielectric properties for the specimens. The results of the experiments are as follows; 1. As for water absorption: Bodies were better vitrified with an addition and temperature change of Ba, Bi, Zn-glasses. The specimen containing Cd-glass showed deviation of slow decreasing, where as K-glass was completely not vitrified. 2. Bodies containing Ba, Zn, Bi-glasses appeared comparatively high Modulus of Rupture at 136$0^{\circ}C$, while containing Zr-glass had the highest Modulus of Rupture as the addition changes remarkably at 140$0^{\circ}C$. 3. It was estimated that 20-25% glass present in a forsterite bodies were in good conditions as for physical properties. 4. Specimens of Ba, Bi, Zr-glasses were superior as for dielectric properties, where among Ba-glass was most excellent. 5. Dielectric constant commonly increases in a slight gradient as firing temperature rises. 6. The petrographic examination showed that the bodies containing Ba, Bi-glasses had fine crystals, and were observed distinctly large mosaic crystals in the Zn-glass.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.497-504
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• 1993

Effects of $Ta_2O_5,ZrO_2$ and $SiO_2$ addition on magnetic properties of 0.02wt%$Bi_2O_3$ and 0 . 0 5 wt%$CaCO_3$ doped Mn-Zn ferrites(58.5mol% $Fe_2O_3$, 25.5 mol% ZnO) were investigated. E:lectrlcal resistivity and magnetic properties such as the initial permeability($\mu_i$), loss factor(tan$\delta$), coercive force Hc(m0c) were measured. With lncreasing $Ta_2O_5$ and $ZrO_2$ addition, the following effects were observed: I ) Decreasing of the average grain size; 2) lncreasing of the electrical resistivity and initial permeability; 3) Ilecreasmg of loss factor values. (very low loss esprcially at high frequency region) ; 4 ) Fine and uniform microsrructures were obtamed at O.lwt% nddecl samples. In case of $SiO_2$ addition, anomalous grain growth and degradation of magnetic properties were observed. The obtained maximum initial permeability value was 6260 at IOkHz. $25^{\circ}C$ from 0.02wt%$Bi_2O_3$. 0.05wt%$CaCO_3$, 0.lwt%$Ta_2O_5$ added sample, the corresponded relative loss factor (tan$\delta /\mu_i$)for the sample was $4.2 \times 10^{-6}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.669-674
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• 2002

Ni-Zn ferrite was sintered by microwave hybrid sintering method using microwave energy of 2.45 GHz, 700 W in the temperature range of 900$^{\circ}C$ ∼ 1070$^{\circ}C$. A high density (98%TD) Ni-Zn ferrite, added Bi$_2$O$_3$ and CuO, with a single phase was obtained by microwave sintering at 970$^{\circ}C$ for 15 min. All the sintered samples showed sintered density over 90% of TD. These results indicate that the processing time and energy consumption can be reduced significantly by microwave hybrid sintering method.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.238-243
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• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.30.1-30.1
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• 2009

PZT(Pb(Zr, Ti)$O_3$ 압전세라믹스는 뛰어난 압전 특성과 강유전 특성을 가지고 있어서 현재 널리 사용되고 있다. 하지만 PZT세라믹스는 큐리온도 이상에서 그 특성을 잃게 되고 높은 온도에서의 응용이 제한된다. 따라서 높은 큐리온도를 가지는 압전체를 개발하기 위한 연구가 많이 이루어지고 있다. $PbTiO_3$의 경우에는 $Bi(Zn_{0.5}Ti_{0.5})$, $BiFeO_3$등의 Bi계 세라믹스를 치환하면서 큐리온도가 올라가는 결과가 보고되고 있다. 하지만 이것은 PZT세라믹스 보다 압전 및 유전 특성이 상당히 낮다. 따라서 본 연구에서는 $(1-x)PbZrO_3-xPbTiO_3$조성에 Bi(Me)$O_3$(Me:Zn, Ti, Fe, Al)를 치환하여 압전특성 및 강유전 상전이 온도를 조사하였다. 모든 시편들은 고상반응법으로 제조하였고, 제조한 시편으로 조성에 따른 압전특성 및 유전특성의 변화를 측정하였다. 그리고 이를 통해 큐리온도는 PZT의 MPB조성근처에서 Bi계 세라믹의 치환은 $T_C$가 낮아 졌으나, Tetragonal 상을 가지고 있는 Ti-rich인 조성에서는 $T_C$가 높아지는 것을 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.221-225
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• 2018

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.