Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Defects and Electrical Properties of NiO and Co3O4-doped ZnO-Bi2O3-Sb2O3 Ceramics

NiO와 Co3O4를 첨가한 ZnO-Bi2O3-b2O3 세라믹스의 결함과 전기적 특성

  • Hong, Youn-Woo (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Young-Jin (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Sei-Ki (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Jin-Ho (School of Materials Science and Engineering, Kyungpook National University)
  • 홍연우 (한국세라믹기술원 기능성모듈팀) ;
  • 이영진 (한국세라믹기술원 기능성모듈팀) ;
  • 김세기 (한국세라믹기술원 기능성모듈팀) ;
  • 김진호 (경북대학교 신소재공학부)
  • Received : 2012.12.12
  • Accepted : 2012.12.17
  • Published : 2013.01.01
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Abstract

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

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