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http://dx.doi.org/10.4313/JKEM.2018.31.4.221

The Effect of Electron Beam Irradiation and Ag Buffer Layer on the Structural, Optical, and Electrical Properties of ZnO/Ag Thin Films  

Choi, Jin-Young (School of Materials Science and Engineering, University of Ulsan)
Eom, Tae-Young (School of Materials Science and Engineering, University of Ulsan)
Park, Yun-Je (School of Materials Science and Engineering, University of Ulsan)
Choi, Su-Hyun (School of Materials Science and Engineering, University of Ulsan)
Kim, Dae-Hyun (Poongsan Holdings)
Cho, Yun-Ju (Poongsan Holdings)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.4, 2018 , pp. 221-225 More about this Journal
Abstract
In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.
Keywords
ZnO; Ag; Electron irradiation; X-ray diffraction; Figure of merit;
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Times Cited By KSCI : 2  (Citation Analysis)
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