• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.3
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• pp.167-170
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• 2018

The method of moments(MoM) is one of the most popular integral-equation-based full-wave simulation methods, and the multi-level fast multipole method(MLFMM) algorithm can be used for its efficient calculation. When calculating the surface current on the large scatterer in the MoM or MLFMM, iterative methods for the final matrix inversion are used. Among them, BiCGstab(l) has been widely adopted due to its good convergence rate. The number of iterations can be reduced when l becomes larger, but the number of operations per iteration is increased. Herein, we analyze the computational complexity of BiCGstab(l) in the MLFMM method and propose an optimum choice of l.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Journal of the Mineralogical Society of Korea
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• v.11 no.2
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• pp.117-125
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• 1998

Crystallization behavior of platinum minerals within Pt-Sb-Bi bearing ore magmas and mineralogical properties of the existing minerals were investigated at 1,00$0^{\circ}C$ by synthetic experiment. High purity reagents were used as starting materials and silica tubings as containers. Reaction products were analysed by reflecting microscopy, X-ray diffraction, electron probe microanalysis, and micro-hardness test. Stable minerals at 1,00$0^{\circ}C$ are platinum, electron probe microanalysis, and micro-hardness test. Stable minerals at $1,000^{\circ}C$ are platinum, stump-flite (PtSb) and geversite (PtSb2). They are in equilibrium with liquid (ore magma). Platinum contains considerable amount of Sb of 7.5 at.%, whereas Bi only up to 0.9 at.%. Pure stumpflite is hexagonal with space group P63/mmc, and unit cell parameters are a=4.1318(6), c=5.483(1)$\AA$. VHN50=417(2)$\AA$. Geversite has cubic structure with space group Pa3. Cell parameters are a=6.4373(2)$\AA$ and Vicker hardness values VHN50=663.5 (566~766). Both stumpflite and geversite show solid solution and their end-members are Pt48.8Sb40.7-Bi10.5, and Pt33.7-Sb59.8Bi6.5, respectively. Although stumpflite (m.p. $1,043^{\circ}C$) and unnamed PtBi (m.p. 7$65^{\circ}C$) do not form a complete solid solution at $1,000^{\circ}C$, they are known, at $600^{\circ}C$, to form a continuous solid solution. Geversit (m.p. $1,226^{\circ}C$) also forms complete solid solution with insizwaite (m.p. $660^{\circ}C$). Unit cell dimensions of the minerals above increases with the amount of Bi substituting for Sb.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.55-61
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• 2011

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

• Journal of Magnetics
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• v.14 no.2
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• pp.62-65
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• 2009

The multiferroic $BiFeO_3$ has been investigated extensively in both thin film and ceramic form. However, the synthesis of a perfect sample with high resistivity is a prerequisite for examining its properties. This paper reports the synthesis of multiferroic $BiFeO_3$ along with its structural, electrical and magnetic properties in ceramic form. Polycrystalline ceramic samples of $BiFeO_3$ were synthesized by solid-state reaction using high purity oxides and carbonates. The formation of a single-phase compound was confirmed by x-ray diffraction and its lattice parameters were determined using a standard computer program. The microstructural studies and density measurement confirmed that the prepared samples were sufficiently dense for an examination of its electrical and magnetic properties. The dc electrical conductivity studies show that the sample was resistive with an activation energy of ${\sim}0.81\;eV$. The magnetization measurement showed a linear ($M{\sim}H$) curve indicating antiferromagnetic characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.450.1-450.1
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• 2014

열에너지를 전기에너지로 변환하거나 또는 전기에너지를 열에너지로 직접 변환하는 열전 변환 기술이 주목받고 있다. 열전 변환 효율은 성능지수($ZT={\alpha}^2{\sigma}T{\kappa}^{-1}$)로 평가되며, 여기서 ${\alpha}$, ${\sigma}$, ${\kappa}$, T는 각각 열전재료의 제벡계수, 전기전도도, 열전도도 및 절대온도이다. 따라서 우수한 열전재료는 높은 제벡계수와 전기전도도 그리고 낮은 열전도도를 가져야 한다. Bismuth telluride는 상온영역에서 성능지수가 높은 재료로서, $Bi_2Te_3$에 $Bi_2Se_3$와 고용체를 형성하면 원자의 치환으로 포논산란에 의해 열전도도가 낮아지고, 도핑으로 전기적 특성을 조절하여 성능지수를 향상시킬 수 있다. 본 연구에서는 진공밀폐 용해법으로 $Bi_2Te_{2.85}Se_{0.15}:I_m$ (m=0.0~0.045) 고용체를 합성하여 상분석을 실시하고, 전자 이동특성 및 열전 특성을 평가하였다.

• Progress in Superconductivity
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• v.3 no.2
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• pp.247-251
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• 2002

In general, the bubbling, generated during the fabrication of the tapes, breaks the superconducting filament, and critical current of the tapes will be decreased. Heat-treatment schemes of Bi-2223/Ag HTS tapes were modified, such as pre-annealing of multi-stacked billet, 2-step main sintering and ramp rate etc. The generation of bubbling was drastically decreased from 20 bubbles/m to 0 ~ 1 bubble/m by the modified heat-treatment. Therefore, the value of critical current of the tapes without bubbling was increased almost twice higher than that of already existing tapes. Critical current up to 42 A in 40 m length Bi-22231Ag tapes have been measured at 77K, self-field, 1$mutextrm{V}$/cm criterion. It could be confirmed that elimination of bubbling is effective to maintain the superconducting property along the tape length.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.57-63
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• 2006

In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.

• Journal of Magnetics
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• v.21 no.2
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• pp.179-182
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• 2016

In this paper, 10 nm $Fe_3O_4$ nanoparticles were modified on the surface of $2{\mu}m$ flower-like bismuth oxychloride (BiOCl) spheres by a facile co-precipitation method. The results showed that the $Fe_3O_4/BiOCl$ nanocomposites exhibited excellent photocatalytic activity and superparamagnetic property ($M_s=3.22emu/g$) under visible light for Rhodamine B (RhB) degradation. Moreover, the $Fe_3O_4-BiOCl$ photocatalyst possessed magnetic recyclable property, which could maintain high photocatalytic effective even after 20 cycle times. These characteristic indicates a promising application for wastewater treatment.

• Kyungpook Mathematical Journal
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• v.56 no.1
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• pp.83-94
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• 2016

Let M and N be modules over a ring R. The purpose of this paper is to study modules M, N for which the bi-module [M, N] is regular or pi. It is proved that the bi-module [M, N] is regular if and only if a module N is semi M-projective and $Im({\alpha}){\subseteq}^{\oplus}N$ for all ${\alpha}{\in}[M,N]$, if and only if a module M is semi N-injective and $Ker({\alpha}){\subseteq}^{\oplus}N$ for all ${\alpha}{\in}[M,N]$. Also, it is proved that the bi-module [M, N] is pi if and only if a module N is direct M-projective and for any ${\alpha}{\in}[M,N]$ there exists ${\beta}{\in}[M,N]$ such that $Im({\alpha}{\beta}){\subseteq}^{\oplus}N$, if and only if a module M is direct N-injective and for any ${\alpha}{\in}[M,N]$ there exists ${\beta}{\in}[M,N]$ such that $Ker({\beta}{\alpha}){\subseteq}^{\oplus}M$. The relationship between the Jacobson radical and the (co)singular ideal of [M, N] is described.