• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.785-788
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• 2007

새롭게 제안된 밴드갭 기준전압 발생기는 PVT변동에 둔감하면서 기존의 밴드갭 기준전압 발생기보다 안정적인 동작을 하기 위해 요구되는 최소 전원전압(VDD)의 크기을 낮추었다. 모의실험 결과 전원전압(VDD)이 1.0V의 낮은 전압에서 안정적인 동작을 하는 것을 확인 하였다. 매그나칩 반도체 $0.18{\mu}m$ DDI 공정을 이용하여 Layout 하였고, 사이즈는 $409.36{\mu}m$ ${\times}$ $435.46{\mu}m$ 이다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.71-75
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• 2004

This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

• 대한전자공학회논문지TC
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• 제39권11호
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• pp.34-39
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• 2002

본 논문에서는 마이크로스트립 전송선로의 유전체 기판(substrate) 내에 삽입된 EGP(Elevated Ground Plane)와 비아를 이용하는 소형의 새로운 포토닉 밴드갭(PBG：Photonic Bandgap) 구조를 제안였하고, 세라믹 기판에 적용된 최적구조를 설계하였다. 해석 결과, 제안된 새로운 PBG 구조는 기존의 평면 PBG 구조에 비해서 크기가 52.5 % 축소되었고 대역폭은 45 % 증가하였다. 그리고 접지면 식각 다층 PBG 구조에 비해서는 크기가 32 % 감소하였고 첨예도(sharpness)가 향상되었으며 차단주파수 이상에서 40 GHz까지 전력손실이 8 dB 이상 개선되었다. 따라서 본 논문에서 제안된 PBG 구조는 대역 저지 또는 저역통과 여파기로 사용할 수 있으며, 이러한 여파기 특성은 경박 단소화된 마이크로파 대역 집적회로나 모듈 개발에 효과적으로 활용될 수 있으리라 기대된다.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.52-57
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• 2009

본 논문은 CMOS RFIC 단일 칩을 위한 Bandgap Voltage Reference와 이를 포함한 저 잡음 Low Dropout (LDO) Regulator 회로에 관한 것이다. 저 잡음을 위해 Bandgap Voltage Reference에 사용된 BJT 다이오드의 유효면적을 증가시켜야 함을 LDO의 잡음해석을 통해 나타내었다. 이를 위해 다이오드를 직렬 연결하여 실리콘의 실제면적은 최소화 하면서 다이오드의 유효면적을 증가시키는 방법을 적용하였고, 이를 통해 LDO의 출력잡음을 줄일 수 있음을 확인하였다. $0.18{\mu}m$ CMOS 공정으로 제작된 LDO는 입력전압이 2.2 V 에서 5 V 일때 1.8 V의 출력전압에서 최대 90 mA의 전류를 내보낼 수 있다. 측정 결과 Line regulation은 0.04%/V 이고 Load regulation은 0.45%를 얻었으며 출력 잡음 레벨은 100 Hz와 1 kHz offset에서 각각 479 nV/$^\surd{Hz}$와 186 nV/$^\surd{Hz}$의 우수한 성능을 얻었다.

• Bulletin of the Korean Chemical Society
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• 제29권9호
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• pp.1807-1810
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• 2008

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Journal of electromagnetic engineering and science
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• 제6권1호
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• pp.62-70
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• 2006

This paper presents a new power plane design method incorporating a single geometry derived from a unit cell of photonic bandgap(PBG) structure. This method yields constantly wide suppression of parallel plate resonances from 0.9 GHz to 4.2 GHz and is very efficient to eliminate PCB resonances in a specified frequency region to provide effective suppression of simultaneous switching noise(SSN). It is shown that with only two cells the propagation of unwanted high frequency signals is effectively suppressed, while it could provide continuous return signal path. The measured results agree very well with theoretically predicted ones, and confirm that proposed method is effective for reducing EMI, with measured near-field distribution. The proposed topology is suitable for design of high speed digital system.

• 대한전자공학회논문지SD
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• 제47권7호
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• pp.23-29
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• 2010

할로우 코어 포토닉 밴드갭 광섬유(hollow core photonic bandgap fiber, HC-PBGF)와 광섬유 브래그 격자(fiber Bragg grating, FBG)를 이용하여 새로운 형태의 가스 검출 방식을 제안하였다. 제안하는 가스 측정 방식에서는 할로우 코어 포토닉밴드갭 광섬유에 채워진 가스의 흡수 스펙트럼을 우선 측정하고, 광섬유 브래그 격자를 파장 변조함으로써 얻어진 신호로부터 가스 농도에 대한 정보를 얻을 수 있다. 가스 측정 실험에서는 2m의 할로우 코어 포토닉 밴드갭 광섬유와 중심 파장이 1539.02nm인 광섬유 브래그 격자를 사용하였으며, 광섬유 브래그 격자의 반사파장을 1539.3nm에서 1539.6nm까지 2Hz의 주기로 가변하였다. 제안하는 가스센서는 2.5%, 5%의 아세틸렌가스를 선별적으로 잘 검출할 수 있다는 것을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.73-78
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• 2008

We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.