• 전기전자학회논문지
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• 제25권2호
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• pp.350-355
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• 2021

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 V_CE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, V_CE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 V_CE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

• Composites Research
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• 제36권4호
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• pp.259-263
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• 2023

This study investigated the open hole tensile (OHT) properties of carbon fiber/epoxy composites and compared them to bolt joint tensile (BJT) properties. The net nominal modulus and strength (1376 MPa) were found to be higher than the gross nominal strength (1041 MPa), likely due to increasing hole size. The OHT and BJT specimens exhibited similar stiffness, as expected without bolt rotation causing secondary bending. OHT specimens experienced a sharp drop in stress indicating unstable crack propagation, delamination, and catastrophic failure. BJT specimens failed through shear out on the bolt side and bearing failure on the nut side, involving fiber kinking, matrix splitting, and delamination, resulting in lower strength compared to OHT specimens. The strength retention of carbon fiber/epoxy composites with open holes was 66%. Delamination initiation at the hole's edge caused a reduction in the stress concentration factor. Filling the hole with a bolt suppressed this relieving mechanism, leading to lower strength in BJT specimens compared to OHT specimens. Bolt joint efficiency was calculated as 15%. The reduction in strength in bolted joints was attributed to fiber-matrix splitting and delamination, aligning with Hart Smith's bolted joint efficiency diagram. These findings contribute to materials selection and structural reliability estimation for carbon fiber/epoxy composites. They highlight the behavior of open hole and bolt joint configurations under tensile loading, providing valuable insights for engineering applications.

• 센서학회지
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• 제23권4호
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• pp.284-289
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• 2014

In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

• 약학회지
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• 제55권5호
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• pp.361-366
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• 2011

Traditional herbal medicinal preparation Bojungikki-tang (BJT) is well-known herbal medicine used as tonic. We fermented Bojungikki-tang using nine lactic acid bacteria strains and discovered two remarkably increased compositions from the fermented BJTs using HPLC/DAD analysis. HPLC/DAD-guided fractionation of the increased compositions followed by structure identification using NMR and MS identified liquiritigenin and isoliquiritigenin. These bioconversion compositions were quantitatively analyzed using HPLC-DAD. Liquiritigenin contents were highest in BJTs fermented with L. amylophilus (1.91 mg/g) and L. fermentum (1.89 mg/g), which were increased by 20-fold compared to BJT (0.09 mg/g). Isoliquiritigenin contents were highest in BJTs in fermented with L. plantarum (0.19 mg/g) and L. fermentum (0.19 mg/g), which were increased by 19-fold compared to BJT (0.01 mg/g).

• 한국위성정보통신학회논문지
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• 제8권2호
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• pp.36-43
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• 2013

본 논문에서는 고전압에서 동작하는 DDIC(display driver IC) 칩의 정전기 보호소자로 사용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘이 분석되었다. 이온주입 조건을 달리하는 매트릭스 조합에 의한 수차례의 2차원 시뮬레이션 및 TLP 특성 데이타를 비교한 결과, BJT 트리거링 후에 더블 스냅백 현상이 나타났으나 웰(well) 및 드리프트(drift) 이온주입 조건을 적절히 조절함으로써 안정적인 ESD 보호성능을 얻을 수 있었다. 즉, 최적의 백그라운드 캐리어 밀도를 얻는 것이 고전압 동작용 정전기보호소자의 고전류 특성에 매우 중요한 영향을 주는 임계인자(critical factor)임을 알 수 있었다.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1995년도 추계종합학술발표회 논문집
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• pp.1063-1066
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• 1995

• 전자공학회논문지D
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• 제34D권8호
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• pp.41-51
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• 1997

The device simulator (BANDIS) which can analyze efficiently the electrical characteristics of the semiconductor devices under the three dimensional stationary conditions on the IBM PC was developed. Poisson, electon and hole continuity equations are discretized y te galerkin method using a tetrahedron as af finite element. The frontal solver which has exquisite data structures and advanced input/output functions is dused for the matrix solver which needs the highest cost in the three dimensional device simulation. The discretization method of the continuity equations used in BANDIS are compared with that of the scharfetter-gummel method used in the commercial three-dimensional device. To verify an accuracy and the efficiency of the discretization method, the simulation results of the PN junction diode and the BJT from BANDIS are compared with those of the commercial three-dimensiional device simulator such as DAVINCI. The maximum relative error within 2% and the average number of iterations needed for the convergence is decreased by more than 20%. The total simulation time of the BJT with 25542 nodes is decreased to about 60% compared with that of DAVINCI.

• 혜화의학회지
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• 제23권2호
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• pp.33-38
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• 2015

The purpose of this study was to report the effect of Bogijetong-tang on post-herpetic neuralgia(PHN). The main symptoms were numbness, pain, burning, paresthesia on left dorsum pedis and insomina. We prescribed Bogijetong-tang (BJT) three times a day and performed acupuncture and moxibustion twice a day. We observed the change of symptoms to evaluate the therapeutic effect. The symptoms were evaluated with numerical rating scale(NRS). After the treatment, pain decreased from 8 to 3, burning from 5 to 1, paresthesia from 7 to 5, numbness from 5 to 3 and insomina improved. Above the results, Bogijetongtang is effective in treating post-herpetic neuralgia.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• 전자공학회논문지D
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• 제35D권4호
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• pp.71-77
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• 1998

In this paper, algeration of electical characteristics is analyzed when the operating temperature of MOSFET, BJT and CMOS/BiCMOS inverter is lowered from 300K to 77K. As the operating temperature is lowered, electric characteristics of MOSFET are enhanced generally but, those of bipolar transistor are degraded because current gain is reduced by BGN(Band Gap Narrowing) effect. For the inverter considered in this work, switching characteristics of PSA-BiCMOS inverter are enhanced by the electrical characteristics enhancement of MOSFET when the operating temperature is reduced to 200K, while under 200K, those of PSA-BiCMOS inverter are degraded because the degradation of BJT impacts on the inverter circuit.