• 대한본초학회지
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• 제34권6호
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• pp.45-55
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• 2019

Objective : Diabetic gastroparesis is a complication that is defined as delayed gastric emptying and upper gastrointestinal symptoms and often occurs in long-standing diabetic patients. Bojungikgi-tang (BJT) is a traditional oriental herbal formula that has long been used for the treatment of digestive disorders. The purpose of this study was to investigate the effects of BJT on streptozotocin (STZ)-induced diabetic gastroparesis rat model. Methods : Sprague-Dawley (SD) male rats (250-270g) were divided into 13 groups including normal group, STZ-induced diabetic control group, BJT diet (7 various concentrations), and insulin-, glibenclamide-, metformin-treated group were used for the experiments for the comparison. Diabetic gastroparesis was induced by intraperitoneal injection of STZ. The water intake, food intake, body weights and fasting blood glucose levels were measured. After 4 weeks the animals were sacrificed and gastrin, leptin, insulin, hemoglobin A1C (HbA1c), lactate, lactate dehydrogenase (LDH), bilirubin, creatinine, albumin and lipid levels were evaluated. Results : Intraperitoneal injection of BJT for 4 weeks resulted in increased levels of gastrin in blood and decreased leptin and lactate concentration in STZ-induced diabetic gastroparesis rat model. BJT did not affect insulin, fasting glucose, HbA1c, and lipid levels in STZ-induced diabetic gastroparesis rat model. Conclusion : These results indicated that BJT would have protect effect on diabetic gastroparesis through the improvement effect of gastric motility and fatigue syndrome in STZ-induced diabetic rats. This study shows that BJT might be effective for treatment of diabetes and its complications such as gastroparesis.

• 전자공학회논문지
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• 제51권7호
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• pp.89-95
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• 2014

주위 밝기 및 환경에 따라서 LED 조명등의 밝기를 조절하기 위한 장치를 PWM 기술과 전력 소자를 이용하여 구현하였다. 주위의 광량 측정을 위하여 CdS 센서를 사용하였으며, PWM 신호 생성을 위하여 MCU를 사용하여 제어 보드를 설계한 다음 광량에 따라 듀티비를 조절하였다. 고전압, 대전류를 필요로 하는 LED 조명등을 디밍하기 위하여 전력 소자를 사용하여 DC 전원장치의 출력을 스위칭하였으며, PowerMOSFET, IGBT, PowerBJT를 각각 사용하여 특성을 서로 비교하였다. 실험결과 선형성 면에서는 IGBT가 양호하였으나, 효율 및 가격 면까지 고려하면 PowerBJT도 우수한 특성을 보였다.

• 대한한방내과학회지
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• 제34권4호
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• pp.384-404
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• 2013

Objectives : Effects of Bogijetong-tang (BJT) on peripheral nerve regeneration have been reported in a previous study on BJT but additional study on a damaged peripheral neuropathy where its damage level is physically and chemically more severe was needed. Plus, this study was conducted because there haven't been any studies for BJT on central nerve regeneration. Methods : In order to check the effect on central nerve regeneration, the study on cerebellum cells was started and the sciatic nerve was used to observe the effects on a peripheral nerve which was severely damaged both physically and chemically. Nerve recovery effects were observed by analyzing target proteins such as phospho-extracellular signal-regulated kinase, ${\beta}1$ integrin, neurofilament 200, growth-associated protein-43, cyclin-dependent kinase 1, phospho-vimentin, phospho-Smad, and caspase 3. Results : The significant changes of target protein in cerebellum neurons have been observed. The changes of index protein on the axon regeneration and the nerve recovery in the sciatic nerve have been observed and the effects on cell protection were observed, as well. Conclusions : This study confirmed that BJT made a significant influence on nerve protection and recovery of a damaged peripheral neuropathy and it also made a possibility of its regeneration in a damaged central nerve injury.

• 대한본초학회지
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• 제29권1호
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• pp.53-60
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• 2014

Objectives : Bojungikgitang (BJT), the Oriental medical prescription has been traditionally used about improvement of immune response and infective disease at Asian nation. In this study, we has compared about the anti-inflammatory and antioxidative effects on BJT of three countries including Korea (Korean Traditional Medicine, KTM), China (Traditional Chinese Medicine, CTM) and Japan (Japanese Traditional Medicine, JTM). Methods : We has basically using LPS-stimulated RAW 264.7 cells. The expression of these inflammatory mediators has measured using enzyme-linked immunosorbent assay (ELISA) and reverse transcription polymerase chain reaction (RT-PCR). Also, free radical scavenging assay has tested for anti-oxidative activity as well as the contents of total flavonoid and polyphenol. Results : As a result, we were founded the inhibitory effects of BJT (KTM, CTM, JTM) on LPS-induced production of NO, TNF-${\alpha}$ and IL-6 as well as the anti-oxidative activities. Especially the KTM was most effective in anti-inflammatory and anti-oxidative activities. Conclusions : These results indicate that BJT (KTM, CTM, JTM) has a good anti- inflammatory and anti-oxidative effects. But, there were degree of effects on between pharmacopoeia of the countries. Thus, further study is required that find appropriate methods for extracting as well as establish of standardized processes in order to improve the quality of BJT (KTM, CTM, JTM) as an anti-inflammatory and anti-oxidative agent for treatment of inflammatory diseases.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.2287-2290
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• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• 조명전기설비학회논문지
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• 제14권2호
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• pp.43-45
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• 2000

본 연구에서는 BICMOS 공정으로 제조된 바이폴라 프렌지스터의 SPICE 잡음 파라미터 추출방법을 제시하였다. 기하학적 분석요로부터 $K_f$ 값이 에미터 면적에 반비례하고 있음을 보였다. 그리고 $K=0.8\times10_{-20}, A_f=2, \alpha=1$ 값이 추출되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.393-394
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• 2008

This paper presents a new method to extract the substrate resistance by fitting current-dependent base resistance of parasitic BJT without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the proposed DC technique.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.692-696
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• 1997

본 연구에서는 BJT(Bipolar Junction Transistor)와 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) 등을 1MeV에너지의 전자빔을 선량을 변화시켜가며 조사시켜 그 특성 변화를 분석하였다. BJT에 대해서는 조사 전, 후의 전류 이득의 측정을 통해 base 에서의 minority-carrie의 수명 변화에 의해서 전류 이득이 감소하는 것으로 나타났으며, MOSFET의 경우는 oxide 지역의 전하량 변화에 의해서 문턱 전압이 영향을 받음을 확인할 수 있었다. BJT의 minority-carrier의 수명 감소량은 조사 선량이 증가함에 따라 직선적으로 변화함을 알 수 있었고, MOSFET의 문턱 전압의 변화는 nMOS와 pMOS의 경우 서로 다름을 관찰할 수 있었는데 이는 oxide내에서 발생하는 전하에 의해 차이가 남을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제54권2호
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• pp.501-506
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• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• 전기전자학회논문지
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• 제6권2호
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• pp.136-145
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• 2002

정상상태에서 소자 내부의 격자온도 분포를 해석할 수 있는 시뮬레이터를 개발하였다. Slotboom 변수를 사용하여 열흐름 방정식을 이산화하였고, 요소내에서 열전도율의 적분값을 해석적으로 구할 수 있는 방법을 제안하였다. 제안된 방법의 타당성을 검증하기 위해 $N^+P$ 접합 다이오드와 BJT에 대해 모의실험을 수행하였고 DAVINCI와 MEDICI의 결과와 비교하였다. $N^+P$ 접합 다이오드에서 순방향 인가전압이 1.4[V]일 때 격자 온도분포는 DAVINCI의 결과와 2%의 상대오차를 보였으며 BJT에서 컬렉터 전압이 5.0[V]이고 베이스 전압이 0.5[V]일 때 격자 온도분포는 MEDICI의 결과와 3%의 상대오차를 보였다. BANDIS에서 제안된 열전도율의 적분방법을 사용하는 경우 수렴을 위해 평균 3.45회의 행렬 연산이 필요하나 DAVINCI에서는 평균 5.1회의 행렬 연산이 필요하였고 MEDICI는 평균 4.3회 행렬연산이 필요하였다.