Extraction of Substrate Resistance in MOSFET Through DC Base Resistance Measurement of Parasitic BJT

기생 BJT의 DC 베이스저항 측정을 통한 MOSFET의 기판저항 추출

  • Jung, Dae-Hyoun (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Cha, Jun-Young (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Cha, Ji-Young (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seong-Hearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • 정대현 (한국외국어대학교 전자정보공학부) ;
  • 차준영 (한국외국어대학교 전자정보공학부) ;
  • 차지용 (한국외국어대학교 전자정보공학부) ;
  • 이성현 (한국외국어대학교 전자정보공학부)
  • Published : 2008.06.18

Abstract

This paper presents a new method to extract the substrate resistance by fitting current-dependent base resistance of parasitic BJT without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the proposed DC technique.

Keywords